CFP15
PMEG050V150EPD
50 V, 15 A low VF MEGA Schottky barrier rectifier
4 December 2014 Product data sheet
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1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a CFP15 (SOT1289) power
and flat lead Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
Average forward current: IF(AV) ≤ 15 A
Reverse voltage: VR ≤ 50 V
Extremely low forward voltage
High power capability due to clip-bonding technology and heat sink
Small and thin SMD power plastic package, typical height 0.78 mm
AEC-Q101 qualified
3. Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Freewheeling application
Reverse polarity protection
Low power consumption application
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
IF(AV) average forward
current
δ = 0.5; f = 20 kHz; Tsp ≤ 160 °C;
square wave
- - 15 A
VRreverse voltage Tj = 25 °C - - 50 V
VFforward voltage IF = 15 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C; pulsed
- 450 500 mV
VR = 10 V; tp ≤ 3 ms; δ ≤ 0.3;
Tj = 25 °C; pulsed
- 30 70 µAIRreverse current
VR = 50 V; tp ≤ 3 ms; δ ≤ 0.3;
Tj = 25 °C; pulsed
- 260 1000 µA
NXP Semiconductors PMEG050V150EPD
50 V, 15 A low VF MEGA Schottky barrier rectifier
PMEG050V150EPD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 4 December 2014 2 / 15
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 A anode
2 A anode
3 K cathode
1
2
3
CFP15 (SOT1289)
aaa-009063
A
KA
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PMEG050V150EPD CFP15 plastic, thermal enhanced ultra thin SMD package; 3 leads;
body: 5.8 x 4.3 x 0.78 mm
SOT1289
7. Marking
Table 4. Marking codes
Type number Marking code
PMEG050V150EPD 050V 150E
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VRreverse voltage Tj = 25 °C - 50 V
IFforward current Tsp = 155 °C; δ = 1 - 21 A
IF(AV) average forward current δ = 0.5; f = 20 kHz; Tsp ≤ 160 °C;
square wave
- 15 A
IFSM non-repetitive peak forward
current
tp = 8 ms; Tj(init) = 25 °C; square wave - 240 A
[1] - 1.66 W
[2] - 2.15 W
Ptot total power dissipation Tamb ≤ 25 °C
[3] - 3.75 W
Tjjunction temperature - 175 °C
Tamb ambient temperature -55 175 °C
NXP Semiconductors PMEG050V150EPD
50 V, 15 A low VF MEGA Schottky barrier rectifier
PMEG050V150EPD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 4 December 2014 3 / 15
Symbol Parameter Conditions Min Max Unit
Tstg storage temperature -65 175 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1][2] - - 90 K/W
[1][3] - - 70 K/W
Rth(j-a) thermal resistance
from junction to
ambient
in free air
[1][4] - - 40 K/W
Rth(j-sp) thermal resistance
from junction to solder
point
[5] - - 3 K/W
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[5] Soldering point of cathode tab.
aaa-014364
tp (s)
10-3 102103
10110-2 10-1
10
1
102
Zth(j-a)
(K/W)
10-1
0.25
0.2
0.1
0.05
0.02
0.01
0
duty cycle = 1
0.75 0.5
0.33
FR4 PCB, standard footprint
Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NXP Semiconductors PMEG050V150EPD
50 V, 15 A low VF MEGA Schottky barrier rectifier
PMEG050V150EPD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 4 December 2014 4 / 15
aaa-014365
tp (s)
10-3 102103
10110-2 10-1
10
1
102
Zth(j-a)
(K/W)
10-1
0.25
0.2
0.1
0.05
0.02
0.01
0
duty cycle = 1
0.75
0.5
0.33
FR4 PCB, mounting pad for cathode 1 cm2
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-014366
tp (s)
10-3 102103
10110-2 10-1
10
1
102
Zth(j-a)
(K/W)
10-1
0.25
0.2
0.1
0.05
0.02
0.01
0
duty cycle = 1
0.75
0.5
0.33
Ceramic PCB, Al2O3, standard footprint
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NXP Semiconductors PMEG050V150EPD
50 V, 15 A low VF MEGA Schottky barrier rectifier
PMEG050V150EPD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 4 December 2014 5 / 15
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V(BR)R reverse breakdown
voltage
IR = 5 mA; Tj = 25 °C; tp ≤ 1.2 ms;
δ ≤ 0.12; pulsed
50 - - V
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C; pulsed
- 305 350 mV
IF = 5 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C; pulsed
- 365 420 mV
IF = 10 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C; pulsed
- 415 - mV
IF = 15 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C; pulsed
- 450 500 mV
VFforward voltage
IF = 15 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 125 °C; pulsed
- 380 - mV
VR = 5 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C;
pulsed
- 20 - µA
VR = 10 V; tp ≤ 3 ms; δ ≤ 0.3;
Tj = 25 °C; pulsed
- 30 70 µA
VR = 30 V; tp ≤ 3 ms; δ ≤ 0.3;
Tj = 25 °C; pulsed
- 70 - µA
IRreverse current
VR = 50 V; tp ≤ 3 ms; δ ≤ 0.3;
Tj = 25 °C; pulsed
- 260 1000 µA
VR = 1 V; f = 1 MHz; Tj = 25 °C - 1750 - pFCddiode capacitance
VR = 10 V; f = 1 MHz; Tj = 25 °C - 570 - pF
trr reverse recovery time
step recovery
IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A;
Tj = 25 °C
- 51 - ns
trr reverse recovery time
ramp recovery
dIF/dt = 200 A/µs; Tj = 25 °C; IF = 6 A;
VR = 26 V
- 20 - ns
VFRM peak forward recovery
voltage
IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C - 288 - mV
NXP Semiconductors PMEG050V150EPD
50 V, 15 A low VF MEGA Schottky barrier rectifier
PMEG050V150EPD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 4 December 2014 6 / 15
aaa-014367
10-1
1
10
102
IF
(A)
10-2
VF (V)
0 0.80.60.2 0.4
(1)
(2)
(3)
(4)
(5) (6) (7)
pulsed condition
(1) Tj = 175 °C
(2) Tj = 150 °C
(3) Tj = 125 °C
(4) Tj = 100 °C
(5) Tj = 85 °C
(6) Tj = 25 °C
(7) Tj = −40 °C
Fig. 4. Forward current as a function of forward
voltage; typical values
aaa-014368
10-1
10-2
10-3
10-4
10-5
10-6
10-7
10-8
IR
(A)
10-9
VR (V)
0 504020 3010
(1) (2) (3)
(4)
(5)
(6)
pulsed condition
(1) Tj = 150 °C
(2) Tj = 125 °C
(3) Tj = 100 °C
(4) Tj = 85 °C
(5) Tj = 25 °C
(6) Tj = −40 °C
Fig. 5. Reverse current as a function of reverse
voltage; typical values
VR (V)
0 504020 3010
aaa-014369
3.5
Cd
(nF)
2.5
1.5
0.5
0
1.0
2.0
3.0
f = 1 MHz; Tamb = 25 °C
Fig. 6. Diode capacitance as a function of reverse
voltage; typical values
aaa-014370
IF(AV) (A)
0 24168
4
6
2
8
10
PF(AV)
(W)
0
(1)
(2)
(3)
(4) (5)
Tj = 100 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 0.8
(5) δ = 1
Fig. 7. Average forward power dissipation as a
function of average forward current; typical
values
NXP Semiconductors PMEG050V150EPD
50 V, 15 A low VF MEGA Schottky barrier rectifier
PMEG050V150EPD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 4 December 2014 7 / 15
VR (V)
0 504020 3010
aaa-014371
0.6
1.2
1.8
PR(AV)
(W)
0
(1)
(2)
(3)
(4)
(5)
Tj = 100 °C
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
(5) δ = 0.2
Fig. 8. Average reverse power dissipation as a
function of reverse voltage; typical values
Tamb (°C)
0 20015050 100
aaa-014372
4
8
12
IF(AV)
(A)
0
(1)
(2)
(3)
(4)
FR4 PCB, standard footprint
Tj = 175 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 9. Average forward current as a function of
ambient temperature; typical values
Tamb (°C)
0 20015050 100
aaa-014373
4
8
12
IF(AV)
(A)
0
(1)
(2)
(3)
(4)
FR4 PCB, mounting pad for cathode 1 cm2
Tj = 175 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 10. Average forward current as a function of
ambient temperature; typical values
Tamb (°C)
0 20015050 100
aaa-014374
6
12
18
IF(AV)
(A)
0
(1)
(2)
(3)
(4)
Ceramic PCB, Al2O3, standard footprint
Tj = 175 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 11. Average forward current as a function of
ambient temperature; typical values
NXP Semiconductors PMEG050V150EPD
50 V, 15 A low VF MEGA Schottky barrier rectifier
PMEG050V150EPD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 4 December 2014 8 / 15
Tsp (°C)
0 20015050 100
aaa-014375
8
16
24
IF(AV)
(A)
0
(1)
(2)
(3)
(4)
Tj = 175 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 12. Average forward current as a function of solder point temperature; typical values
NXP Semiconductors PMEG050V150EPD
50 V, 15 A low VF MEGA Schottky barrier rectifier
PMEG050V150EPD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 4 December 2014 9 / 15
11. Test information
time
IF
IR
trr
IR(meas)
006aad022
Fig. 13. Reverse recovery definition; step recovery
003aac562
trr
time
100 %
25 %
IFdlF
dt
IRIRM
Qr
Fig. 14. Reverse recovery definition; ramp recovery
001aab912
time
time
VFRM
VF
IF
VF
Fig. 15. Forward recovery definition
NXP Semiconductors PMEG050V150EPD
50 V, 15 A low VF MEGA Schottky barrier rectifier
PMEG050V150EPD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 4 December 2014 10 / 15
Fig. 16. Duty cycle definition
The current ratings for the typical waveforms are calculated according to the equations:
IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with
IRMS defined as RMS current.
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
12. Package outline
14-10-13Dimensions in mm
6.6
6.4
0.24
0.16
0.82
0.74
5.9
5.7
4.4
4.2
1.3
1.1
4.2
3.8
4.8
4.4
1.3
0.9
2.15
1.95 3.5
3.1
0.45
0.25
0.45
0.25
2.13
2 1
3
Fig. 17. Package outline CFP15 (SOT1289)
NXP Semiconductors PMEG050V150EPD
50 V, 15 A low VF MEGA Schottky barrier rectifier
PMEG050V150EPD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 4 December 2014 11 / 15
13. Soldering
Footprint information for reflow soldering of CFP15 package SOT1289
sot1289_fr
Dimensions in mm
occupied area
solder paste
solder resist
solder lands
Issue date 13-08-28
14-03-12
2.13
1.4 (2×) 1.8 (2×)
1.6 (2×)
4.6
3.73
1.7 (4×)
0.2
2.4
3.8
4
0.11
0.2
0.2
0.4
1.02
0.6
0.05
7.5
0.6
1.9
1.9
5.16 4.96
1.341.441.64
Fig. 18. Reflow soldering footprint for CFP15 (SOT1289)
NXP Semiconductors PMEG050V150EPD
50 V, 15 A low VF MEGA Schottky barrier rectifier
PMEG050V150EPD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 4 December 2014 12 / 15
14. Revision history
Table 8. Revision history
Data sheet ID Release date Data sheet status Change notice Supersedes
PMEG050V150EPD v.3 20141204 Product data sheet - PMEG050V150EPD v.2
Modifications: Product status changed
PMEG050V150EPD v.2 20140704 Preliminary data sheet - PMEG050V150EPD v.1
PMEG050V150EPD v.1 20140519 Objective data sheet - -
NXP Semiconductors PMEG050V150EPD
50 V, 15 A low VF MEGA Schottky barrier rectifier
PMEG050V150EPD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 4 December 2014 13 / 15
15. Legal information
15.1 Data sheet status
Document
status [1][2]
Product
status [3]
Definition
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
15.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
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customer have explicitly agreed otherwise in writing. In no event however,
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is deemed to offer functions and qualities beyond those described in the
Product data sheet.
15.3 Disclaimers
Limited warranty and liability — Information in this document is believed
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or completeness of such information and shall have no liability for the
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Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
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representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
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Semiconductors accepts no liability for any assistance with applications or
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associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
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and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
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agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
NXP Semiconductors PMEG050V150EPD
50 V, 15 A low VF MEGA Schottky barrier rectifier
PMEG050V150EPD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 4 December 2014 14 / 15
No offer to sell or license — Nothing in this document may be interpreted
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15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
NXP Semiconductors PMEG050V150EPD
50 V, 15 A low VF MEGA Schottky barrier rectifier
PMEG050V150EPD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 4 December 2014 15 / 15
16. Contents
1 General description ............................................... 1
2 Features and benefits ............................................1
3 Applications ........................................................... 1
4 Quick reference data ............................................. 1
5 Pinning information ............................................... 2
6 Ordering information .............................................2
7 Marking ................................................................... 2
8 Limiting values .......................................................2
9 Thermal characteristics .........................................3
10 Characteristics .......................................................5
11 Test information ..................................................... 9
11.1 Quality information ............................................. 10
12 Package outline ................................................... 10
13 Soldering .............................................................. 11
14 Revision history ...................................................12
15 Legal information .................................................13
15.1 Data sheet status ............................................... 13
15.2 Definitions ...........................................................13
15.3 Disclaimers .........................................................13
15.4 Trademarks ........................................................ 14
© NXP Semiconductors N.V. 2014. All rights reserved
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Date of release: 4 December 2014
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