BERSBLARFET - 275 - RAEB s a Es) ba te .. _ & FB ag of lewel@ glanl|@elaxl a # & & a % C7 ke 8 @FLM5964-8D BiG | Vos() 15} pss (A) 3.60} 5.40) Vos=5, Vos=0 Zin=Zout=50Q ADR : SHE BBM) = 7 BBA. OC Vos () ~5) Rth 3.00} 3.50) Frew 4-2RCC/W) (502 (CARES, G (L. HHFI39dBm (Vos=10V, 5. 9-6. 4GHz) | Prtw)# 42| IM3(dBc)/ 42.00] -45. 00 6. AGHz, A f=10MHz, #* APEWERE) 5 >| IC 5 BE : SEALAANMSSH Gads FET. | Teh(C) 175] 7 add (%) 30. 00 P ici **2-Tone Test, Po A REHE. BAB. SS. G* (dB) 7.00] 7.50 P ici =28dBmS. C. L. n SE. SUSE | 1c=25C P#(dBm) | 38.00) 39.00 #14B, Vps=10V, Ipg=0. 6lpss, f=5. 9-6. 4GHz a @FLM6472-4C Bw | Vos(v) 15} Ipss(A) 1.80) 2.70} Vos=5, Vos=0 n add: BATH Fam : SHF SH RTA Vas() -5| gm(mnS) HEE bE Vos=5V, Ipg=1. 1A 554 G (| 47736dBm (Vps=10V, 6. 4-7. 2GHz) | Pr(W)* 25] Rth .00) 6.00| Fr4-4-2RCC/) Zin=Zout=50Q 5 5 a 5 Fee: AMTIAMSE SE! Gads FET. Teh (C) 175] 1 add (%) 30.00 P ical QO A ROE. SMA]. BAB. Gx (dB) 7.00| 8.00 P idl D I ( aa, SSG S HBG | *Tc=25C Pe(dBm) | 35.00) 36.00 #10B, Vos=10V, Ips=0. 6lpss, f=6. 4-7. 2GHz @FLM6472-4D BH | Vos() 15} loss (A) 1.80) 2.70] Vos=5V, Vos=0 Zin=Zout=50Q Fa : SHP aH = 7 BTA. | Vos() -5] Rth(C/) 5.00] 6.00) #ram-4-20 (50Q ARBRE, G ( Hi736dBm(f=6. 4~7. 2GHz) Pr(W)* 251 IM3(dBe)! -42.00] -45.00 f=7. 2GHz, A f=10MHz, * AES RE) 5 CG [ 7 5 Foie: BAMAANRB AA! GaAs PET. | Teh(C) i758] 7 add (%) 30. 00 PrapiZia] Uo #2-Tone Test, Po= Co | S A ROVE. BUWABH. BAlffo Gras (GB) 7.00) 7.50 Prag tz fel Lo 25dBnS. C. L. D i aR ESSE AB | +Tc=25C Prge(dBm)} 35.00] 36.00 Vos=10V, Ins=0. 6loss, f=6. 4~7. 2GHz @FLM6472-6D BB | Vos() 15} pss (A) 3.40} 4. 201 Vos=5V, Vos=0 #Pout=27dBmSCL, FAR : SH FERS Se. Vos () 5] gm (mS) 4k, ie Vps=5V, Ipg=1. 7A f=7, 2GHz G ( tH7138dBm(f=6. 4~7. 2GHz) Pr (W)# 31] IMs(dBe)| -42.00/ -45. 00 A f=10MHz, 2-Tone, ** WE: AWARE AB Gals FET, Teh (C) 175] 9 add (%) 36. 00 P ict s C s A REi6o BMT EH. SF. | RthCC/) 4} Gx (dB) 8.50) 9.50 P ical > T asec. SRE ibaa | #Te=25C P(dBm) | 37.00) 38.00 10B. Vps=10V, Ips=0. 4~0. Sings, 22502 @FLM6472-8C Bik | Vos () 15] Ipss (A) 3.60} 5.40] Yps=5V, Vos=0 n add: BATA Fog: SHF FRESHER. Vos () -5] gm(mS) HEE, FE Vps=5V, Ips=2. 2A 5 G HiF339dBm (Vos=10V, 6. 4-7. 2GHz) | Pr(W)* 42] Rth 3.00] 3.50) Fra-4-afehCC/W) Zin=Zout=50Q . FER: AMAR AB! GaAs FET. Tch(C) 175] 7 add (%) 29.00 P falc . > C . A ROE. BMH. HFS. G+ (dB) 6.00} 7.00 P ical oe CE, ASG ZABE | *Tc=25C Pe(dBm) | 38.00] 39.00 #1dB, Vos=10V, Ins=0. 6l oss, f=6. 4-7. 2GHz ~