MMRF1305HR5 MMRF1305HSR5
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
RF power transistors suitable for both narrowband and broadband CW or
pulse applications operating at frequencies from 1.8 to 2000 MHz, such as
military and radio communications and radar. These devices are fabricated
using Freescale’s enhanced ruggedness platform and are suitable for use in
applications where high VSWRs are encountered.
Typical Performance: VDD =50Vdc
Frequency
(MHz) Signal Type
Pout
(W)
Gps
(dB)
D
(%)
IMD
(dBc)
30--512 (1,3) Two--Tone
(100 kHz spacing)
100 PEP 19.0 30.0 -- 3 0
512 (2) CW 100 27.2 70.0 —
512 (2) Pulse (200 sec, 20%
Duty Cycle)
100 Peak 26.0 70.0 —
Load Mismatch/Ruggedness
Frequency
(MHz) Signal Type VSWR
Pout
(W)
Test
Voltage Result
512 (2) Pulse
(100 sec, 20%
Duty Cycle)
>65:1
at all Phase
Angles
130
(3 dB
Overdrive)
50 No Device
Degradation
512 (2) CW 126
(3 dB
Overdrive)
1. Measured in 30--512 MHz broadband reference circuit.
2. Measured in 512 MHz narrowband test circuit.
3. The values shown are the minimum measured performance numbers across the
indicated frequency range.
Features
Wide Operating Frequency Range
Extremely Rugged
Unmatched, Capable of Very Broadband Operation
Integrated Stability Enhancements
Low Thermal Resistance
Integrated ESD Protection Circuitry
In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +133 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Storage Temperature Range Tstg --65 to +150 C
Case Operating Temperature TC--40 to +150 C
Operating Junction Temperature (4) TJ--40 to +225 C
4. Continuous use at maximum temperature will affect MTTF.
Document Number: MMRF1305H
Rev. 0, 12/2013
Freescale Semiconductor
Technical Data
1.8--2000 MHz, 100 W, 50 V
BROADBAND
RF POWER LDMOS TRANSISTORS
MMRF1305HR5
MMRF1305HSR5
NI--780S--4L
MMRF1305HSR5
NI--780H--4L
MMRF1305HR5
Figure 1. Pin Connections
(Top View)
Drain A
Drain B
Gate A
Gate B
Note: The backside of the package is the
source terminal for the transistors.
Freescale Semiconductor, Inc., 2013.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
MMRF1305HR5 MMRF1305HSR5
Table 2. Thermal Characteristics
Characteristic Symbol Value (1) Unit
Thermal Resistance, Junction to Case
CW: Case Temperature 81C, 100 W CW, 50 Vdc, IDQ(A+B) = 100 mA, 512 MHz
RJC 0.38 C/W
Thermal Impedance, Junction to Case
Pulse: Case Temperature 73C, 100 W Peak, 100 sec Pulse Width,
20% Duty Cycle, 50 Vdc, IDQ(A+B) = 100 mA, 512 MHz
ZJC 0.12 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2, passes 2500 V
Machine Model (per EIA/JESD22--A115) B, passes 250 V
Charge Device Model (per JESD22--C101) IV, passes 2000 V
Table 4. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics (2)
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 400 nAdc
Drain--Source Breakdown Voltage
(VGS =0Vdc,I
D=50mA)
V(BR)DSS 133 141 —Vdc
Zero Gate Voltage Drain Leakage Current
(VDS =50Vdc,V
GS =0Vdc)
IDSS — — 3 Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS =0Vdc)
IDSS — — 10 Adc
On Characteristics
Gate Threshold Voltage (2)
(VDS =10Vdc,I
D= 170 Adc)
VGS(th) 1.6 2.1 2.6 Vdc
Gate Quiescent Voltage
(VDD =50Vdc,I
D= 100 mAdc, Measured in Functional Test)
VGS(Q) 2.1 2.6 3.1 Vdc
Drain--Source On--Voltage (2)
(VGS =10Vdc,I
D=1Adc)
VDS(on) —0.23 —Vdc
Dynamic Characteristics (2)
Reverse Transfer Capacitance
(VDS =50Vdc30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Crss —0.24 —pF
Output Capacitance
(VDS =50Vdc30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Coss —23.9 —pF
Input Capacitance
(VDS =50Vdc,V
GS =0Vdc30 mV(rms)ac @ 1 MHz)
Ciss —73.6 —pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD =50Vdc,I
DQ(A+B) = 100 mA, Pout = 100 W Peak (20 W Avg.), f = 512 MHz,
200 sec Pulse Width, 20% Duty Cycle
Power Gain Gps 25.0 26.0 27.0 dB
Drain Efficiency D68.0 70.0 — %
Input Return Loss IRL — -- 1 4 -- 9 dB
Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system, IDQ(A+B) = 100 mA)
Frequency
(MHz)
Signal
Type VSWR
Pout
(W) Test Voltage, VDD Result
512 Pulse
(100 sec, 20% Duty Cycle)
>65:1
at all Phase Angles
130 Peak
(3 dB Overdrive)
50 No Device Degradation
CW 126
(3 dB Overdrive)
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
2. Each side of device measured separately.
MMRF1305HR5 MMRF1305HSR5
3
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
50
0.1
1000
010
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 2. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
20
Ciss
10
1
Coss
Crss
Measured with 30 mV(rms)ac @ 1 MHz
VGS =0Vdc
Note: Each side of device measured separately.
IDQ(A+B) = 100 mA
Figure 3. Normalized VGS versus Quiescent
Current and Case Temperature
NORMALIZED VGS(Q)
TC, CASE TEMPERATURE (C)
1.05
1.04
1.02
1.01
1.03
1
0.99
0.98
0.97
0.96
0.95
100-- 5 0 0--25 25 50 75
200 mA
VDD =50Vdc
250
108
90
TJ, JUNCTION TEMPERATURE (C)
Figure 4. MTTF versus Junction Temperature -- CW
107
106
104
110 130 150 170 190
MTTF (HOURS)
210 230
105
ID=2.2Amps
2.8 Amps
3.3 Amps
100 300 mA
600 mA
VDD =50Vdc
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
30 40
100 --1.945
IDQ (mA) Slope (mV/C)
200 --1.826
300 --1.700
600 --1.648
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
4
RF Device Data
Freescale Semiconductor, Inc.
MMRF1305HR5 MMRF1305HSR5
512 MHz NARROWBAND PRODUCTION TEST FIXTURE
Figure 5. MMRF1305HR5(HSR5) Narrowband Test Circuit Component Layout — 512 MHz
CUT OUT AREA
COAX1
COAX2
COAX3
COAX4
C1
B1
L1
C13
C2
C4
C5
C3
C6
C7
L2
C9
C8
B2
L3
C11
C10 C12
C14
C24
C15
C16
C17
C18
C19
L4
C22
C21
C20
C23
Table 5. MMRF1305HR5(HSR5) Narrowband Test Circuit Component Designations and Values — 512 MHz
Part Description Part Number Manufacturer
B1, B2 Small Ferrite Beads, Surface Mount 2743019447 Fair-Rite
C1, C8 22 F, 35 V Tantalum Capacitors T491X226K035AT Kemet
C2, C9 120 pF Chip Capacitors ATC100B121JT500XT ATC
C3 4.3 pF Chip Capacitor ATC100B4R3CT500XT ATC
C4, C5 56 pF Chip Capacitors ATC100B560CT500XT ATC
C6, C7, C15, C16, C17, C18 27 pF Chip Capacitors ATC100B270JT500XT ATC
C10, C21 0.1 F Chip Capacitors C1812F104K1RACTU Kemet
C11, C22 0.01 F Chip Capacitors C1825C103K1GACTU Kemet
C12, C23 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26-RH Multicomp
C13, C19 240 pF Chip Capacitors ATC100B241JT200XT ATC
C14, C20 2.2 F Chip Capacitors G2225X7R225KT3AB ATC
C24 7.5 pF Chip Capacitor ATC100B7R5CT500XT ATC
Coax1, 2 25 Semi Rigid Coax, 2.2Shield Length UT-141C-25 Micro-Coax
Coax3, 4 25 Semi Rigid Coax, 2.0Shield Length UT-141C-25 Micro-Coax
L1, L2 5 Turns, 18.5 nH Inductors, Wire Wound A05TKLC Coilcraft
L3, L4 7 Turns, 22 nH Inductors, Wire Wound B07TJLC Coilcraft
PCB 0.030,r=2.55 AD255D Arlon
MMRF1305HR5 MMRF1305HSR5
5
RF Device Data
Freescale Semiconductor, Inc.
Z1 0.3660.082Microstrip
Z2, Z15 0.0700.102Microstrip
Z3, Z16 0.0940.102Microstrip
Z4, Z17 0.1030.102Microstrip
Z5, Z18 0.1250.102Microstrip
Z6, Z19 0.1680.102Microstrip
Z7*, Z20* 0.9120.058Microstrip
Z8, Z21 0.4200.726Microstrip
Z9, Z22 0.2710.507Microstrip
Z10*, Z23* 0.8220.150Microstrip
Z11, Z24 0.5900.216Microstrip
Z12, Z25 0.2570.216Microstrip
Z13 0.1920.082Microstrip
Z14 0.1730.082Microstrip
* Line length includes microstrip bends
Figure 6. MMRF1305HR5(HSR5) Narrowband Test Circuit Schematic — 512 MHz
Table 6. MMRF1305HR5(HSR5) Narrowband Test Circuit Microstrips — 512 MHz
DescriptionMicrostripDescriptionMicrostrip
VBIAS
RF
INPUT Z1
DUT
Z10
Z11
COAX1
COAX2
Z12
C1
Z9
Z22
VBIAS
VSUPPLY
C13 C12
+
Z2
Z15
C4
C5
Z3
Z16
C3
Z4
Z17
Z20
Z6
Z19
RF
OUTPUT
COAX3
COAX4
Z14
Z5
Z18
Z7
L1
Z8
Z21
Z13
C6 C7
B1
C2
L2
C8 C9
L3
C14 C10
+
+
C11
C16
C15
Z24 Z25
C17
C18
Z23
VSUPPLY
C19 C23
+
L4
C20 C21 C22
C24
B2
6
RF Device Data
Freescale Semiconductor, Inc.
MMRF1305HR5 MMRF1305HSR5
TYPICAL CHARACTERISTICS — 512 MHz
Pin, INPUT POWER (dBm)
50
46
42
30
52
48
40
Pout, OUTPUT POWER (dBm)
44
54
28262418 2220
58
36
34
38
12 1614
VDD =50Vdc
IDQ(A+B) = 100 mA
f = 512 MHz
512 117 132
f
(MHz)
P1dB
(W)
P3dB
(W)
0
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 7. CW Output Power versus Gate--Source
Voltage at a Constant Input Power
0
135
120
Pout, OUTPUT POWER (WATTS)
75
60
45
30
15
1.5 2 2.5 3 4.5
VDD =50Vdc
f = 512 MHz
Figure 8. CW Output Power versus Input Power
21
28
3
10
80
10
26
24
70
60
50
40
30
Pout, OUTPUT POWER (WATTS) CW
Figure 9. Power Gain and Drain Efficiency
versus CW Output Power
Gps, POWER GAIN (dB)
D, DRAIN EFFICIENCY (%)
D
27
25
23
100 200
25_C
TC=--30_C
85_C
85_C
VDD =50Vdc
IDQ(A+B) = 100 mA
f = 512 MHz 25_C
-- 3 0 _C
22 20
105
90
Pin =0.24W Pin =0.12W
0.5 1 3.5 4
56
Gps
MMRF1305HR5 MMRF1305HSR5
7
RF Device Data
Freescale Semiconductor, Inc.
512 MHz NARROWBAND PRODUCTION TEST FIXTURE
VDD =50Vdc,I
DQ(A+B) = 100 mA, Pout = 100 W Peak
f
MHz
Zsource
Zload
512 1.50 + j8.90 12.2 + j18.0
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload = Test circuit impedance as measured from
drain to drain, balanced configuration.
Figure 10. Narrowband Series Equivalent Source and Load Impedance — 512 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
--
-- +
+
Zsource Zload
50
50
8
RF Device Data
Freescale Semiconductor, Inc.
MMRF1305HR5 MMRF1305HSR5
30--512 MHz BROADBAND REFERENCE CIRCUIT
Table 7. 30--512 MHz Broadband Performance (In Freescale Reference Circuit, 50 ohm system)
VDD =50Volts,I
DQ(A+B) = 400 mA
Signal Type
Pout
(W)
f
(MHz)
Gps
(dB)
D
(%)
IMD
(dBc)
Two-Tone
(200 kHz spacing)
25 PEP 30 24.5 25.3 -37.8
100 19.6 19.9 -35.7
512 21.3 20.3 -42.8
50 PEP 30 24.5 36.7 -29.1
100 19.9 28.9 -32.9
512 21.7 29.6 -43.7
75 PEP 30 23.9 44.6 -24.1
100 19.4 35.1 -25.1
512 21.7 36.8 -37.4
100 PEP 30 23.2 50.7 -20.1
100 18.8 39.8 -20.4
512 21.6 42.2 -28.6
MMRF1305HR5 MMRF1305HSR5
9
RF Device Data
Freescale Semiconductor, Inc.
30--512 MHz BROADBAND REFERENCE CIRCUIT
Figure 11. MMRF1305HR5(HSR5) Broadband Reference Circuit Component Layout — 30--512 MHz
R1
T2
C1
R3
Q1
E3
C2
C3
E4
E2
E1
T1
R4
L2
C15
C10
C9
C7
C8
E5
T4
L1
C6 C5 C14
R2 C4 C16
C13
C12
C11
Connects shields
above PCB
T3
E6
E7
Table 8. MMRF1305HR5(HSR5) Broadband Reference Circuit Component Designations and Values — 30--512 MHz
Part Description Part Number Manufacturer
C1, C4 2.2 F Chip Capacitors C1825C225J5RAC Kemet
C2, C3, C7, C8, C9, C10 20K pF Chip Capacitors ATC200B203KT50XT ATC
C5, C13 200 nF Chip Capacitors C1812C224K5RAC-TU Kemet
C6, C12 2.2 F Chip Capacitors G2225X7R225KT3AB ATC
C11 2.7 pF Chip Capacitor ATC100B2R7BT500XT ATC
C14, C16 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26-RH Multicomp
C15 2.0 pF Chip Capacitor ATC100B2R0BT500XT ATC
E1, E2 #43 Ferrite Beads 2643023402 Fair-Rite
E3, E4, E5 Binocular Toroid K Material 12-365-K Ferronics
E6, E7 Toroid Ferrite K Material 11 -- 7 5 0 -- K Ferronics
L1, L2 10 Turns, #18 AWG, Toroid Transformer with
Ferrites E6, E7
8075 Copper Magnetic Wire Belden
Q1 RF Power LDMOS Transistor MRFE6VP100HR5 Freescale
R1, R2 10 , 1/4 W Chip Resistors CRCW120610ROJNEA Vishay
R3, R4 56 , 1/4 W Chip Resistors CRCW120656ROJNEA Vishay
T1 50 Flex Cable, 4Sucoform 141 Hubert+Suhner
T2, T3 22 Flex Cable, 3.25M27500-16RC1509 Whitmor-Wirenetics
T4 25 Semi Rigid, 2.75UT-90-25 Micro-Coax
PCB 0.030,r=2.55 AD255A Arlon
10
RF Device Data
Freescale Semiconductor, Inc.
MMRF1305HR5 MMRF1305HSR5
Z1 0.3660.082Microstrip
Z2, Z3 0.0700.102Microstrip
Z4,Z5 0.0940.102Microstrip
Z6*, Z7* 1.3750.063Microstrip
Z8, Z9 0.5610.219Microstrip
Z10, Z11 0.2500.219Microstrip
Z12*, Z13* 1.1250.150Microstrip
Z14, Z15 0.5630.219Microstrip
Z16, Z17 0.0940.219Microstrip
Z18, Z19 0.1560.219Microstrip
Z20 0.3590.078Microstrip
* Line length includes microstrip bends
Table 9. MMRF1305HR5(HSR5) Narrowband Test Circuit Microstrips — 30--512 MHz
DescriptionMicrostrip
RF
INPUT Z1
DUT
Z12
Z14 Z16Z10
Z11
VBIAS
VSUPPLY
C14
+
Z2
Z3
C2
Z4
RF
OUTPUT
Z6
Z9
R1
C1
L1, E6 C6 C5
C8
C7
C15
R3
C11
Z18
C3
Z5
Z8
Z7
R4
VBIAS
R2
C4
Z13
VSUPPLY
C16
+
L2, E7
C12 C13
Z15 Z17
C9
C10
Z19
C3
DescriptionMicrostrip
Figure 12. MMRF1305HR5(HSR5) Broadband Test Circuit Schematic — 30--512 MHz
E1, E2
T1
T3
E4
T2
E3
E5
T4
Z20
MMRF1305HR5 MMRF1305HSR5
11
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 30--512 MHz
BROADBAND REFERENCE CIRCUIT
Pout, OUTPUT POWER (WATTS) CW
D, DRAIN EFFICIENCY (%)
0
Gps
f, FREQUENCY (MHz)
Figure 13. Power Gain, CW Output Power and Drain
Efficiency versus Frequency at a Constant Input Power
0
28
26
24
0
210
180
165
150
75
60
45
30
D
Gps, POWER GAIN (dB)
22
20
18
16
14
12
2
50 100 150 200 250 300 550
120
15
VDD =50Vdc,P
in =2W
IDQ(A+B) = 100 mA
Pout
10
8
6
4
350 400 450 500
90
105
135
195
0
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 14. CW Output Power versus Gate--Source
Voltage at a Constant Input Power
0
200
150
Pout, OUTPUT POWER (WATTS)
100
50
0.5 1 2.5 3 41.5 2 3.5
512 MHz
VDD =50Vdc
Pin =1W 30 MHz
100 MHz
0
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 15. CW Output Power versus Gate--Source
Voltage at a Constant Input Power
0
200
150
Pout, OUTPUT POWER (WATTS)
100
50
0.5 1 2.5 3 41.5 2 3.5
512 MHz
30 MHz
100 MHz
VDD =50Vdc
Pin =2W
12
RF Device Data
Freescale Semiconductor, Inc.
MMRF1305HR5 MMRF1305HSR5
TYPICAL CHARACTERISTICS — 30--512 MHz
BROADBAND REFERENCE CIRCUIT
Figure 16. CW Output Power versus Input Power
Pin, INPUT POWER (dBm)
48
44
40
36
46
Pout, OUTPUT POWER (dBm)
42
50
34323024 2826
52
36
34
38
18 2220
30
100
512
78
81
123
107
118
142
f
(MHz)
P1dB
(W)
P3dB
(W)
12
26
3
10
80
10
22
18
60
50
40
30
20
Pout, OUTPUT POWER (WATTS) CW
Figure 17. Power Gain and Drain Efficiency
versus CW Output Power
Gps, POWER GAIN (dB)
D, DRAIN EFFICIENCY (%)
20
16
14
100 200
24 70
Gps
100 MHz
VDD =50Vdc
IDQ(A+B) = 100 mA
VDD =50Vdc
IDQ(A+B) = 100 mA
f=30MHz
512 MHz
100 MHz
D
512 MHz
30 MHz
100 MHz
512 MHz
30 MHz
MMRF1305HR5 MMRF1305HSR5
13
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 30--512 MHz
BROADBAND REFERENCE CIRCUIT — TWO--TONE (1)
Figure 18. Intermodulation Distortion
Products versus Output Power — 30 MHz
-- 7 0
-- 1 0
10
7th Order
Pout, OUTPUT POWER (WATTS) PEP
VDD =50Vdc,I
DQ(A+B) = 400 mA
f1 = 29.9 MHz, f2 = 30.1 MHz
Two--Tone Measurements
3rd Order
-- 3 0
-- 4 0
-- 5 0
100 200
IMD, INTERMODULATION DISTORTION (dBc)
-- 6 0
5th Order
1
Figure 19. Intermodulation Distortion
Products versus Output Power — 100 MHz
-- 7 0
-- 1 0
10
7th Order
Pout, OUTPUT POWER (WATTS) PEP
VDD =50Vdc,I
DQ(A+B) = 400 mA
f1 = 99.9 MHz, f2 = 100.1 MHz
Two--Tone Measurements
3rd Order
-- 3 0
-- 4 0
-- 5 0
100 200
IMD, INTERMODULATION DISTORTION (dBc)
-- 6 0 5th Order
1
Figure 20. Intermodulation Distortion
Products versus Output Power — 520 MHz
-- 7 0
-- 2 0
10
7th Order
Pout, OUTPUT POWER (WATTS) PEP
VDD =50Vdc,I
DQ(A+B) = 400 mA
f1 = 511.9 MHz, f2 = 512.1 MHz
Two--Tone Measurements
3rd Order
-- 3 0
-- 4 0
-- 5 0
100 200
IMD, INTERMODULATION DISTORTION (dBc)
-- 6 0
5th Order
1
-- 2 0 -- 2 0
1. The distortion products are referenced to one of the two tones and the peak envelope power (PEP) is 6 dB above the power in a single tone.
14
RF Device Data
Freescale Semiconductor, Inc.
MMRF1305HR5 MMRF1305HSR5
30--512 MHz BROADBAND REFERENCE CIRCUIT
Zo=50
Zsource
f = 512 MHz
f=30MHz
Zload
f=30MHz
f = 512 MHz
VDD =50Vdc,P
out = 100 W CW
f
MHz
Zsource
Zload
30 10.7 + j1.20 45.8 – j9.00
64 10.9 + j0.70 39.7 – j15.4
88 10.9 + j0.50 33.9 – j18.1
108 10.3 + j0.70 30.0 – j14.4
144 11.0 + j0.70 26.0 – j16.7
170 10.4 + j0.60 21.8 – j13.4
230 9.90 + j0.90 17.0 – j10.7
352 8.90 + j2.30 13.8 – j0.60
450 7.60 + j4.80 16.9 + j9.50
512 7.20 + j6.00 23.7 + j13.5
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload = Test circuit impedance as measured from
drain to drain, balanced configuration.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
--
-- +
+
Zsource Zload
50
50
Figure 21. Broadband Series Equivalent Source and Load Impedance — 30--512 MHz
MMRF1305HR5 MMRF1305HSR5
15
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
16
RF Device Data
Freescale Semiconductor, Inc.
MMRF1305HR5 MMRF1305HSR5
MMRF1305HR5 MMRF1305HSR5
17
RF Device Data
Freescale Semiconductor, Inc.
18
RF Device Data
Freescale Semiconductor, Inc.
MMRF1305HR5 MMRF1305HSR5
MMRF1305HR5 MMRF1305HSR5
19
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Dec. 2013 Initial Release of Data Sheet
20
RF Device Data
Freescale Semiconductor, Inc.
MMRF1305HR5 MMRF1305HSR5
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Document Number: MMRF1305H
Rev. 0, 12/2013