97
DD110F/KD110F
DIODE MODULE
Unit a
Symbol Item Ratings
DD110F40
400
480
DD110F80
800
960
DD110F120 DD110F160
1200
1300
1600
1700
Unit
VRRM
VRSM
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
V
V
Symbol Item
Average Forward Current
Conditions Ratings Unit
AIF AV
Single phase, half wave, 180 conduction, Tc 88
110
IF (RMS) R.M.S. Forward Current
Single phase, half wave, 180 conduction, Tc 88
172 A
IFSM Surge Forward Current 1 2 cycle, 50/60HZ, peak value, non-repetitive 2300/2550 A
I2tI2tValue for one cycle of surge current 26500 A2S
VISO
Isolation Breakdown Voltage R.M.S
A.C.1minute 2500 V
Tj Junction Temperature 40 125
Tstg Storage Temperature
Mounting
Torque
40 125
Mounting
M5
Terminal M5
Mass
Recommended Value 1.5 2.5 15 25
Recommended Value 1.5 2.5 15 25
2.7 28
2.7 28
N m
f B
g170
Electrical Characteristics
Symbol
IRRM
Item
Repetitive Peak Reverse Current, max.
Conditions
at VDRM, single phase, half wave. Tj 125
Ratings
20
1.45
0.25
Unit
mA
VFM Forward Voltage Drop, max.
Forward current 350A Tj 25 Inst. measurement
V
Rth j-c Thermal Impedance, max. Junction to case /W
Power Diode Module DD110F series are designed for various rectifier circuits. DD110F
has two diode chips connected in series in 25mm (1inch) width package and the mounting
base is elctrically isolated from elements for simple heatsink construction. Wide voltage
rating up to, 1,600V is avaiable for various input voltage.
Isolated mounting base
Two elements in a package for simple (single and three phase) bridge
connections
Highly reliable glass passivated chips
High surge current capability
Applications
Various rectifiers, Battery chargers, DC motor drives
UL;E76102 M
Maximum Ratings Tj 25
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