To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support. "Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. 2SJ530(L), 2SJ530(S) Silicon P Channel MOS FET REJ03G0880-0500 (Previous: ADE-208-655C) Rev.5.00 Sep 07, 2005 Description High speed power switching Features * Low on-resistance RDS (on) = 0.08 typ. * 4 V gate drive devices. * High speed switching. Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 4 D 1 1 2 3 Rev.5.00 Sep 07, 2005 page 1 of 8 2 3 1. Gate 2. Drain 3. Source 4. Drain G S 2SJ530(L), 2SJ530(S) Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Symbol VDSS Value -60 Unit V VGSS ID 20 -15 V A -60 -15 A A ID (pulse) IDR Note 1 Note 3 Avalanche current Avalanche energy IAP Note 3 EAR -15 19 A mJ Channel dissipation Channel temperature Pch Tch Note 2 30 150 W C -55 to +150 C Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Tstg Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit V (BR) DSS V (BR) GSS -60 20 -- -- -- -- V V ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 IDSS IGSS -- -- -- -- -10 10 A A VDS = -60 V, VGS = 0 VGS = 16 V, VDS = 0 Gate to source cutoff voltage Static drain to source on state resistance VGS (off) RDS (on) -1.0 -- -- 0.08 -2.0 0.10 V ID = -1 mA, VDS = -10 V Note 4 ID = -8 A, VGS = -10 V Static drain to source on state resistance Forward transfer admittance RDS (on) |yfs| -- 6.5 0.11 11 0.16 -- S ID = -8 A, VGS = -4 V Note 4 ID = -8 A, VDS = -10 V Input capacitance Output capacitance Ciss Coss -- -- 850 420 -- -- pF pF Reverse transfer capacitance Turn-on delay time Crss td (on) -- -- 110 12 -- -- pF ns VDS = -10 V VGS = 0 f = 1 MHz Rise time Turn-off delay time tr td (off) -- -- 75 125 -- -- ns ns Fall time Body to drain diode forward voltage tf VDF -- -- 75 -1.1 -- -- ns V trr -- 70 -- ns Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Body to drain diode reverse recovery time Note: 4. Pulse test Rev.5.00 Sep 07, 2005 page 2 of 8 Test Conditions Note 4 VGS = -10 V ID = -8 A RL = 3.75 IF = -15 A, VGS = 0 IF = -15 A, VGS = 0 diF/dt = 50 A/s 2SJ530(L), 2SJ530(S) Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating -1000 Operation in this area is limited by RDS (on) ID (A) -300 30 Drain Current Channel Dissipation Pch (W) 40 20 10 -100 -30 10 0 1 m s DC = 1 s 0 Op ms era tio (1 sh n( Tc ot) =2 5 C) PW -10 -3 -1 -0.3 0 0 50 100 150 Case Temperature Ta = 25C -0.1 -0.1 -0.3 -1 200 Tc (C) Pulse Test -5 V -100 VDS (V) -3.5 V VDS = -10 V Pulse Test -16 -12 -8 -3 V -4 VGS = -2.5 V Drain Current -12 Drain Current -30 -20 ID (A) ID (A) -6 V -16 -10 Typical Transfer Characteristics -4 V -10 V -3 Drain to Source Voltage Typical Output Characteristics -20 10 s -8 25C -4 Tc = 75C -25C 0 0 -2 -4 -6 -10 -8 Drain to Source Saturation Voltage vs. Gate to Source Voltage -4.0 Pulse Test -3.2 -2.4 -1.6 ID = -15 A -10 A -0.8 -5 A 0 0 -4 -8 -12 Gate to Source Voltage Rev.5.00 Sep 07, 2005 page 3 of 8 -16 -20 VGS (V) 0 -1 -2 -3 -4 Gate to Source Voltage VDS (V) -5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Static Drain to Source on State Resistance RDS (on) () Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Voltage 0 1 0.5 0.2 VGS = -4 V 0.1 -10 V 0.05 0.02 Pulse Test 0.01 -0.1 -0.3 -1 -3 Drain Current -10 -30 ID (A) -100 2SJ530(L), 2SJ530(S) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) () Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test 0.4 -5 A 0.3 ID = -15 A -10 A 0.2 VGS = -4 V 0.1 -10 V 0 -40 0 -5 A, -10 A -15 A 40 80 Case Temperature 120 160 100 30 Tc = -25C 10 75C 1 0.3 -1 -3 -10 -30 -100 Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage 5000 Pulse Test 2000 200 Capacitance C (pF) Reverse Recovery Time trr (ns) -0.3 Tc (C) 500 100 50 20 10 di / dt = 50 A / s VGS = 0, Ta = 25C 5 -0.1 -0.2 -0.5 -1 -2 500 100 50 IDR (A) VGS -8 VDS VDD = -50 V -25 V -10 V -60 -12 -16 -80 -100 0 8 16 Gate Charge Rev.5.00 Sep 07, 2005 page 4 of 8 24 32 Qg (nc) -30 -40 -50 -20 40 1000 Switching Time t (ns) -4 VGS (V) ID = -15 A -40 -20 Switching Characteristics Gate to Source Voltage -20 Crss Drain to Source Voltage VDS (V) 0 VDD = -10 V -25 V -50 V Coss 200 Dynamic Input Characteristics 0 Ciss 1000 20 VGS = 0 f = 1 MHz 10 0 -10 -5 -10 -20 Reverse Drain Current VDS (V) VDS = -10 V Pulse Test 0.1 -0.1 Body-Drain Diode Reverse Recovery Time Drain to Source Voltage 25C 3 300 100 30 td(off) tf tr td(on) 10 3 1 -0.1 -0.2 VGS = -10 V, VDD = -30 V PW = 5 s, duty 1 % -0.5 -1 -2 Drain Current -5 -10 -20 ID (A) 2SJ530(L), 2SJ530(S) Reverse Drain Current vs. Source to Drain Voltage Repetitive Avalanche Energy EAR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current IDR (A) -20 -16 -12 -10 V -5 V -8 VGS = 0, 5 V -4 Pulse Test 0 0 -0.4 -0.8 -1.2 -1.6 Source to Drain Voltage -2.0 20 IAP = -15 A VDD = -25 V duty < 0.1 % Rg 50 16 12 8 4 0 25 50 75 100 125 150 Channel Temperature Tch (C) VSD (V) Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25C D=1 1 0.5 0.3 0.2 0.1 0.1 ch - c (t) = s (t) * ch - c 0.05 ch - c = 4.17C/W, Tc = 25C 0.02 0.03 0 .01 1 o sh D= PDM tp uls 0.01 10 e PW T PW T 100 10 m 1m 100 m 1 10 Pulse Width PW (S) Avalanche Test Circuit VDS Monitor Avalanche Waveform L EAR = 1 * L * IAP2 * 2 VDSS VDSS - VDD IAP Monitor Rg V(BR)DSS IAP D.U.T VDD VDS ID Vin -15 V 50 0 Rev.5.00 Sep 07, 2005 page 5 of 8 VDD 2SJ530(L), 2SJ530(S) Switching Time Test Circuit Waveform Vin Vout Monitor Vin Monitor 10% D.U.T. 90% RL 90% 90% Vin -10 V 50 VDD = -30 V Vout td(on) Rev.5.00 Sep 07, 2005 page 6 of 8 10% tr 10% td(off) tf 2SJ530(L), 2SJ530(S) Package Dimensions RENESAS Code Package Name MASS[Typ.] PRSS0004ZD-B DPAK(L)-(2) / DPAK(L)-(2)V 0.42g Unit: mm 1.7 0.5 JEITA Package Code 2.3 0.2 0.55 0.1 1.2 0.3 16.2 0.5 3.1 0.5 1.15 0.1 0.8 0.1 (0.7) 4.7 0.5 5.5 0.5 6.5 0.5 5.4 0.5 0.55 0.1 0.55 0.1 2.29 0.5 2.29 0.5 RENESAS Code Package Name MASS[Typ.] SC-63 PRSS0004ZD-C DPAK(S) / DPAK(S)V 0.28g 6.5 0.5 5.4 0.5 (0.1) Unit: mm 2.3 0.2 0.55 0.1 0 - 0.25 2.5 0.5 (1.2) 1.0 Max. 2.29 0.5 Rev.5.00 Sep 07, 2005 page 7 of 8 (5.1) (5.1) (0.1) 1.2 Max 5.5 0.5 1.5 0.5 JEITA Package Code 0.8 0.1 2.29 0.5 0.55 0.1 2SJ530(L), 2SJ530(S) Ordering Information Part Name 2SJ530L-E 2SJ530STL-E Quantity 3200 pcs 3000 pcs Shipping Container Box (Sack) Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00 Sep 07, 2005 page 8 of 8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. 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