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Old Company Name in Catalogs and Other Documents
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April 1st, 2010
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Rev.5.00 Sep 07, 2005 page 1 of 8
2SJ530(L), 2SJ530(S)
Silicon P Channel MOS FET REJ03G0880-0500
(Previous: ADE-208-6 55C)
Rev.5.00
Sep 07, 2005
Description
High speed po wer switc hing
Features
• Low on-resistance
RDS (on) = 0.08 Ω typ.
• 4 V gate drive devices.
• High speed switc hing.
Outline
RENESAS Package code:
PRSS0004ZD-B
(Package name:
DPAK (L)-(2) )
RENESAS Package code:
PRSS0004ZD-C
(Package name:
DPAK (S) )
1. Gate
2. Drain
3. Source
4. Drain
123
4
D
G
S
123
4
2SJ530(L), 2SJ530(S)
Rev.5.00 Sep 07, 2005 page 2 of 8
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Drain to source voltage VDSS –60 V
Gate to source voltage VGSS ±20 V
Drain current ID –15 A
Drain peak current ID (pulse) Note 1 –60 A
Body to drain diode reverse drain current IDR –15 A
Avalanche current IAP Note 3 –15 A
Avalanche energy EAR Note 3 19 mJ
Channel dissipation Pch Note 2 30 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V (BR) DSS –60 — — V ID = –10 mA, VGS = 0
Gate to source breakdown voltage V (BR) GSS ±20 — — V IG = ±100 µA, VDS = 0
Zero gate voltage drain current IDSS — — –10 µA VDS = –60 V, VGS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0
Gate to source cutoff volta ge VGS (off) –1.0 — –2.0 V ID = –1 mA, VDS = –10 V
Static drain to source on state resistance RDS (on) — 0.08 0.10 Ω I
D = –8 A, VGS = –10 V Note 4
Static drain to source on state resistance RDS (on) — 0.11 0.16 Ω I
D = –8 A, VGS = –4 V Note 4
Forward transfer admittance |yfs| 6.5 11 — S ID = –8 A, VDS = –10 V Note 4
Input capacitance Ciss — 850 — pF
Output capacitance Coss — 420 — pF
Reverse transfer capacitance Crss — 110 — pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time td (on) — 12 — ns
Rise time tr — 75 — ns
Turn-off delay time td (off) — 125 — ns
Fall time tf — 75 — ns
VGS = –10 V
ID = –8 A
RL = 3.75 Ω
Body to drain diode forward voltage VDF — –1.1 — V IF = –15 A, VGS = 0
Body to drain diode reverse recovery time trr — 70 — ns IF = –15 A, VGS = 0
diF/dt = 50 A/µs
Note: 4. Pulse test
2SJ530(L), 2SJ530(S)
Rev.5.00 Sep 07, 2005 page 3 of 8
Main Characteristics
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
–20
0
–4
–8
–12
–16
0–2–4–6–8
–10
–20
0
–4
–8
–12
–16
0 –1–2–3–4–5
Tc = 75°C
40
0
10
20
30
0 50 100 150 200
V
DS
= –10 V
Pulse Test
–10 V
–6 V
–5 V
–4 V
–3.5 V
–3 V
V
GS
= –2.5 V
Pulse Test
Drain to Source Voltage VDS (V)
Drain Current I
D
(A)
Maximum Safe Operation Area
–100
–3
–10
–300
–30
–1
–0.3
–0.1
–0.1 –0.3 –1 –3 –10 –30 –100
–1000
Ta = 25°C
PW = 10 ms (1 shot)
DC Operation (Tc = 25°C)
1 ms
10 µs
100 µs
Operation in
this area is
limited by R
DS (on)
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage V
DS (on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–4.0
0
–0.8
–1.6
–2.4
–3.2
0 –4 –8 –12 –16 –20
Pulse Test
I
D
= –15 A
–10 A
–5 A
Drain Current ID (A)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Static Drain to Source on State Resistance
vs. Drain Current
0.2
0.1
0.02
0.05
0.01
–0.3 –10 –30–0.1 –3–1 –100
1
0.5
V
GS
= –4 V
–10 V
Pulse Test
–25°C
25°C
2SJ530(L), 2SJ530(S)
Rev.5.00 Sep 07, 2005 page 4 of 8
0.5
–40 0 40 80 120 160
Case Temperature Tc (°C)
0
0.1
0.2
0.3
0.4
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
Pulse Test
I
D
= –15 A
I
D
= –15 A
–5 A, –10 A
Forward Transfer Admittance |yfs| (S)
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
100
30
3
10
0.3
1
0.1
–0.1 –0.3 –1 –3 –30–10 –100
Tc = –25°C
75°C
V
DS
= –10 V
Pulse Test
25°C
Reverse Drain Current IDR (A)
Reverse Recovery Time trr (ns)
Body-Drain Diode Reverse
Recovery Time
–0.1 –0.2 –0.5 –1 –2 –10–5 –20
500
200
50
100
20
5
10 di / dt = 50 A / µs
V
GS
= 0, Ta = 25°C
0 –10 –20 –30 –40 –50
Capacitance C (pF)
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
5000
1000
2000
500
200
20
50
100
10
Ciss
Coss
Crss
V
GS
= 0
f = 1 MHz
0
0
Gate Charge Qg (nc)
Drain to Source Voltage VDS (V)
0
–20
–16
–12
–8
–4
–100
–80
–60
–40
–20
Gate to Source Voltage VGS (V)
Dynamic Input Characteristics
816243240
V
DS
V
GS
1000
100
300
30
3
10
1–0.2 –0.5 –1 –5–2 –10 –20
–0.1
tf
tr
td(off)
td(on)
Drain Current ID (A)
Switching Time t (ns)
Switching Characteristics
V
DD
= –10 V
–25 V
–50 V
V
DD
= –50 V
–25 V
–10 V
–10 V
V
GS
= –4 V
–10 A
–15 A
–5 A
V
GS
= –10 V, V
DD
= –30 V
PW = 5 µs, duty ≤ 1 %
2SJ530(L), 2SJ530(S)
Rev.5.00 Sep 07, 2005 page 5 of 8
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
20
25 50 75 100 125 150
0
4
8
12
16
Channel Temperature Tch (°C)
Repetitive Avalanche Energy E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
I
AP
= –15 A
V
DD
= –25 V
duty < 0.1 %
Rg ≥ 50 Ω
–20
0
–4
–8
–12
–16
0 –0.4 –0.8 –1.2 –1.6 –2.0
Pulse Test
–5 V
V
GS
= 0, 5 V
–10 V
Avalanche Test Circuit Avalanche Waveform
0
I
D
V
DS
I
AP
V
(BR)DSS
V
DD
E
AR
= • L • I
AP2
•
2
1V
DSS
V
DSS
– V
DD
D.U.T
Rg
I
AP
Monitor
V
DS
Monitor
V
DD
50 Ω
Vin
–
15 V
L
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γ s (t)
3
1
0.3
0.1
0.03
0.01
10 µ100 µ1 m 10 m 100 m 1 10
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
P
DM
PW
T
D = PW
T
θch – c (t) = γ s (t) • θch – c
θch – c = 4.17°C/W, Tc = 25°C
2SJ530(L), 2SJ530(S)
Rev.5.00 Sep 07, 2005 page 6 of 8
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
90%
10%
tf
Switching Time Test Circuit Waveform
Vin Monitor
D.U.T.
Vin
–10 V
R
L
Vout
Monitor
50 Ω
V
DD
= –30 V
2SJ530(L), 2SJ530(S)
Rev.5.00 Sep 07, 2005 page 7 of 8
Package Dimensions
6.5 ± 0.5 2.3 ± 0.2
0.55 ± 0.1
1.2 ± 0.3
0.55 ± 0.1
5.5 ± 0.5 1.7 ± 0.5
16.2 ± 0.5
4.7 ± 0.5
5.4 ± 0.5
1.15 ± 0.1
2.29 ± 0.5 2.29 ± 0.5
0.8 ± 0.1
0.55 ± 0.1
3.1 ± 0.5
(0.7)
Package Name
PRSS0004ZD-B DPAK(L)-(2) / DPAK(L)-(2)V
MASS[Typ.]
0.42g
RENESAS CodeJEITA Package Code
Unit: mm
6.5 ± 0.5
5.4 ± 0.5
2.3 ± 0.2
0.55 ± 0.1
0 – 0.25
0.55 ± 0.1
1.5 ± 0.5
5.5 ± 0.5
2.5 ± 0.5
(1.2)
0.8 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
1.2 Max
(5.1)
(5.1)
1.0 Max.
(0.1)(0.1)
Package Name
PRSS0004ZD-C DPAK(S) / DPAK(S)V
MASS[Typ.]
0.28gSC-63
RENESAS CodeJEITA Package Code
Unit: mm
2SJ530(L), 2SJ530(S)
Rev.5.00 Sep 07, 2005 page 8 of 8
Ordering Information
Part Name Quantity Shipping Container
2SJ530L-E 3200 pcs Box (Sack)
2SJ530STL-E 3000 pcs Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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Colophon .3.0
