BCW65, BCW66
1 Jul-10-2001
NPN Silicon AF Transistor
For general AF applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BCW67, BCW68 (PNP)
1
2
3
VPS05161
Type Marking Pin Configuration Package
BCW65A
BCW65B
BCW65C
BCW66F
BCW66G
BCW66H
EAs
EBs
ECs
EFs
EGs
EHs
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
Maximum Ratings
Parameter Symbol BCW65 BCW66 Unit
Collector-emitter voltage VCEO 32 45 V
Collector-base voltage VCBO 60 75
Emitter-base voltage VEBO 5 5
DC collector current IC800 mA
Peak collector current ICM 1 A
Base current mA100
IB
Peak base current IBM 200
Total power dissipation, TS = 79 °C Ptot 330 mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS
215 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
BCW65, BCW66
2 Jul-10-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BCW65
BCW66
V(BR)CEO
32
45
-
-
-
-
V
Collector-base breakdown voltage
IC = 10 µA, IB = 0
BCW65
BCW66
V(BR)CBO
60
75
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0 V(BR)EBO 5 - -
Collector cutoff current
VCB = 32 V, IE = 0
VCB = 45 V, IE = 0
BCW65
BCW66
ICBO
-
-
-
-
20
20
nA
Collector cutoff current
VCB = 32 V, IE = 0 , TA = 150 °C
VCB = 45 V, IE = 0 , TA = 150 °C
BCW65
BCW66
ICBO
-
-
-
-
20
20
µA
Emitter cutoff current
VEB = 4 V, IC = 0 IEBO - - 20 nA
DC current gain 1)
IC = 100 µA, VCE = 10 V
hFE-grp.A/F
hFE-grp.B/G
hFE-grp.C/H
hFE
35
50
80
-
-
-
-
-
-
-
DC current gain 1)
IC = 10 mA, VCE = 1 V
hFE-grp.A/F
hFE-grp.B/G
hFE-grp.C/H
hFE
75
110
180
-
-
-
-
-
-
DC current gain 1)
IC = 100 mA, VCE = 1 V
hFE-grp.A/F
hFE-grp.B/G
hFE-grp.C/H
hFE
100
160
250
160
250
350
250
400
630
1) Pulse test: t ≤ 300µs, D = 2%
BCW65, BCW66
3 Jul-10-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
DC current gain 1)
IC = 500 mA, VCE = 2 V
hFE-grp.A/F
hFE-grp.B/G
hFE-grp.C/H
hFE
-
-
-
35
60
100
-
-
-
-
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 10 mA
IC = 500 mA, IB = 50 mA
VCEsat
-
-
-
-
0.3
0.7
V
Base-emitter saturation voltage 1)
IC = 100 mA, IB = 10 mA
IC = 500 mA, IB = 50 mA
VBEsat
-
-
-
-
1.25
2
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 20 MHz fT- 170 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz Ccb - 6 - pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz Ceb - 60 -
BCW65, BCW66
4 Jul-10-2001
Transition frequency fT = f (IC)
VCE = 5V
10
EHP00391BCW 65/66
03
10mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
fMHz
Ι
Total power dissipation Ptot = f(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
30
60
90
120
150
180
210
240
270
300
mW
360
Ptot
Permissible pulse load
Ptotmax / PtotDC = f (tp)
10
EHP00392BCW 65/66
-6
0
10
5
D
=
5
10
1
5
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t
p
=
DT
t
p
T
totmax
tot
P
DC
P
p
t
Collector cutoff current ICBO = f (TA)
VCB = VCEmax
10 0 50 100 150
BCW 65/66 EHP00393
TA
5
10
10
nA
10
Ι
CB0
5
5
5
10
10
5
4
3
2
1
0
max
typ
˚C
BCW65, BCW66
5 Jul-10-2001
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 10
10 0 600
BCW 65/66 EHP00395
VCE sat
10
mA
10
10
10
3
2
1
0
-1
5
5
5
mV
200 400 800
150
25
-50
C
Ι
˚C
˚C
˚C
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 10
10 03
BCW 65/66 EHP00394
V
BE sat
10
mA
10
Ι
C
10
10
3
2
1
0
-1
5
5
5
V
12 4
150
25
-50 ˚C
˚C
˚C
DC current gain hFE = f (IC)
VCE = 1V
10 10 10 10
BCW 65/66 EHP00396
h
mA
-1 0 2 3
FE
3
10
10
2
0
10
5
5
10
1
1
10
5
100
25
-50
555
C
Ι
˚C
˚C
˚C
