1N1...A, 1N36..A Series
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Revision: 08-Apr-13 1Document Number: 93493
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Medium Power Silicon Rectifier Diodes, 12 A
FEATURES
• Voltage ratings from 50 V to 1000 V
• High surge capability
• Low thermal impedance
• High temperature rating
• Can be supplied as JAN and JAN-TX devices in
accordance with MIL-S-19500/260
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
• JEDEC registered values are in bold
ELECTRICAL SPECIFICATIONS
Notes
• JEDEC registered values are in bold
• Basic part number indicates cathode to case; for anode to case, add “R” to part number, e.g., 1N1199RA
PRODUCT SUMMARY
IF(AV) 12 A
DO-203AA (DO-4)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IF(AV)
12 A
TC150 °C
IFSM
50 Hz 230 A
60 Hz 240
I2t50 Hz 260 A2s
60 Hz 240
TC- 65 to 200 °C
VRRM Range 50 to 1000 V
VOLTAGE RATINGS
TYPE NUMBER
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
(TC = - 65 °C TO 200 °C)
V
VR(RMS), MAXIMUM RMS
REVERSE VOLTAGE
(TC = - 65 °C TO 200 °C)
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
(TC = - 65 °C TO 200 °C)
V
VRM, MAXIMUM DIRECT
REVERSE VOLTAGE
(TC = - 65 °C TO 200 °C)
V
1N1199A 50 35 100 50
1N1200A 100 70 200 100
1N1201A 150 105 300 150
1N1202A 200 140 350 200
1N1203A 300 210 450 300
1N1204A 400 280 600 400
1N1205A 500 350 700 500
1N1206A 600 420 800 600
1N3670A 700 490 900 700
1N3671A 800 560 1000 800
1N3672A 900 630 1100 900
1N3673A 1000 700 1200 1000
1N1...A, 1N36..A Series
www.vishay.com Vishay Semiconductors
Revision: 08-Apr-13 2Document Number: 93493
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• JEDEC registered values are in bold
(1) I2t for time tx = I2t x tx
(2) Maximum peak reverse current (IRM) under same conditions 2 x rated IR(AV)
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
at case temperature IF(AV) 180° sinusoidal conduction
12 A
150 °C
Maximum peak one cycle non-repetitive
surge current IFSM
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse Following any rated load
condition and with rated
VRRM applied
230
A
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse 240
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse Following any rated load
condition and with VRRM
applied following surge = 0 V
275
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse 285
Maximum I2t for fusing
I2t
t = 10 ms With rated VRRM applied
following surge,
initial TJ = 200 °C
260
A2s
t = 8.3 ms 240
Maximum I2t for individual
device fusing
t = 10 ms With VRRM = 0 V following
surge, initial TJ = 200 °C
370
t = 8.3 ms 340
Maximum I2t for individual
device fusing I2t (1) t = 0.1 ms to 10 ms, VRRM = 0 V following surge 3715 A2s
Maximum forward voltage drop VFM IF(AV) = 12 A (38 A peak), TC = 25 °C 1.35 V
Maximum average
reverse current
VRRM = 50 V
IR(AV) (2) Maximum rated IF(AV) and TC
3.0
mA
VRRM = 100 V 2.5
VRRM = 150 V 2.25
VRRM = 200 V 2.0
VRRM = 300 V 1.75
VRRM = 400 V 1.5
VRRM = 500 V 1.25
VRRM = 600 V 1.0
VRRM = 700 V 0.9
VRRM = 800 V 0.8
VRRM = 900 V 0.7
VRRM = 1000 V 0.6
1N1...A, 1N36..A Series
www.vishay.com Vishay Semiconductors
Revision: 08-Apr-13 3Document Number: 93493
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• JEDEC registered values are in bold
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating case and
storage temperature range TC, TStg - 65 to 200 °C
Maximum internal thermal
resistance, junction to case RthJC DC operation 2.0
°C/W
Thermal resistance,
case to sink RthCS Mounting surface, smooth, flat and greased 0.5
Mounting torque
minimum
Torque applied to nut; non-lubricated threads
1.36 (12)
N · m
(lbf · in)
maximum 1.69 (15)
minimum
Torque applied to nut; lubricated threads
1.07 (9.45)
maximum 1.30 (11.55)
minimum
Torque applied to device case; lubricated threads
1.17 (10.35)
maximum 1.43 (12.65)
Approximate weight
7.0 g
0.25 oz.
Case style JEDEC DO-203AA (DO-4)
1N1...A, 1N36..A Series
www.vishay.com Vishay Semiconductors
Revision: 08-Apr-13 4Document Number: 93493
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Average Forward Current vs.
Maximum Allowable Case Temperature
Fig. 2 - Maximum Low Level Forward Power Loss vs.
Average Forward Current
Fig. 3 - Maximum High Level Forward Power Loss vs.
Average Forward Current
Fig. 4 - Maximum Forward Voltage vs. Forward Current
Fig. 5 - Maximum Transient Thermal Impedance,
Junction to Case vs. Pulse Duration
Fig. 6 - Maximum Non-Repetitive 50 Hz Surge Current vs.
Number of Current Pulses
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95311
Document Number: 95311 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 30-Jun-08 1
DO-203AA (DO-4)
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
3.30 (0.13)
4.00 (0.16)
5.50 (0.22) MIN.
10.20 (0.40)
MAX.
11.50 (0.45)
10.70 (0.42)
10/32" UNF-2A
For metric devices: M5 x 0.8
0.8 ± 0.1
(0.03 ± 0.004)
R 0.40
R (0.02)
Ø 6.8 (0.27)
Ø 1.80 ± 0.20
(Ø 0.07 ± 0.01)
3.50 (0.14)
20.30 (0.80) MAX.
11 (0.43)
2
+ 0.3
0
(0.08 )
+ 0.01
0
Legal Disclaimer Notice
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Revision: 02-Oct-12 1Document Number: 91000
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