Si9948AEY Vishay Siliconix Dual P-Channel 60-V (D-S), 175C MOSFET VDS (V) rDS(on) () ID (A) 0.17 @ VGS = -10 V 2.6 0.26 @ VGS = -4.5 V 2.1 -60 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View G1 G2 D1 D1 D2 P-Channel MOSFET D2 P-Channel MOSFET Parameter Symbol Limit Drain-Source Voltage VDS -60 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 175C)a TA = 25C Pulsed Drain Current Continuous Source Current (Diode Conduction)a TA = 25C Maximum Power Dissipationa 2.2 IDM 15 IS -2 A 2.4 PD TA = 70C Operating Junction and Storage Temperature Range V 2.6 ID TA = 70C Unit W 1.7 TJ, Tstg C -55 to 175 Parameter Junction-to-Ambienta Symbol Typ t 10 sec Max Unit 62.5 C/W RthJA Steady State 93 Notes a. Surface Mounted on 1" x 1" FR4 Board For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70759 S-57253--Rev. B, 24-Feb-98 www.vishay.com FaxBack 408-970-5600 2-1 Si9948AEY Vishay Siliconix Parameter Symbol Test Condition Min Typ Max VGS(th) VDS = VGS, ID = -250 mA -1 IGSS VDS = 0 V, VGS = "20 V "100 VDS = -60 V, VGS = 0 V -1 VDS = -60 V, VGS = 0 V, TJ = 55C -10 Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) Forward Transconductancea Diode Forward Voltagea VDS v -5 V, VGS = -10 V V -15 nA mA A VGS = -10 V, ID = -2.6 A 0.14 0.17 VGS = -4.5 V, ID = -2.1 A 0.20 0.26 gfs VDS = -15 V, ID = -2.6 A 5.0 VSD IS = -2.0 A, VGS = 0 V W S -1.2 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs 10 VDS = -30 30 V, V VGS = -10 10 V V, ID = -2.6 26A 20 nC C 2.5 Gate-Drain Charge Qgd Turn-On Delay Time td(on) 8 20 tr 10 20 23 40 12 20 50 90 Rise Time Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 1.8 VDD = -30 30 V V,, RL = 30 W ID ^ -1 1 A, A VGEN = -10 10 V V, RG = 6 W IF = -2.0 A, di/dt = 100 A/ms ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 70759 S-57253--Rev. B, 24-Feb-98 Si9948AEY Vishay Siliconix Output Characteristics Transfer Characteristics 15 15 VGS = 10 through 6 V TC = -55C 5V 12 12 I D - Drain Current (A) I D - Drain Current (A) 25C 9 4V 6 3 9 150C 6 3 3V 0 0 0 1 2 3 4 5 0 1 VDS - Drain-to-Source Voltage (V) 2 4 5 6 50 60 VGS - Gate-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current 0.4 800 0.3 600 Ciss C - Capacitance (pF) r DS(on) - On-Resistance ( ) 3 VGS = 4.5 V VGS = 10 V 0.2 0.1 400 200 Coss Crss 0 0 0 3 6 9 12 15 0 10 Gate Charge r DS(on) - On-Resistance ( ) (Normalized) V GS - Gate-to-Source Voltage (V) 2.1 VDS = 30 V ID = 2.6 A 8 6 4 2 0 0 2 4 6 Qg - Total Gate Charge (nC) Document Number: 70759 S-57253--Rev. B, 24-Feb-98 30 40 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 10 20 8 10 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 2.6 A 1.5 1.2 0.9 0.6 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 2-3 Si9948AEY Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 r DS(on) - On-Resistance ( ) I S - Source Current (A) 20 10 TJ = 175C TJ = 25C 0.3 0.2 ID = 2.6 A 0.1 1 0 0 0.3 0.6 0.9 1.2 1.5 0 VSD - Source-to-Drain Voltage (V) 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.8 120 90 ID = 250 A 0.4 Power (W) V GS(th) Variance (V) 0.6 0.2 60 0.0 30 -0.2 -0.4 -50 -25 0 25 50 75 100 125 150 175 0 0.001 0.01 0.1 TJ - Temperature (C) 1 10 100 1000 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 93C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 10+2 10+3 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-4 Document Number: 70759 S-57253--Rev. B, 24-Feb-98