Si9948AEY
Vishay Siliconix
Document Number: 70759
S-57253—Rev. B, 24-Feb-98 www .vishay.com FaxBack 408-970-5600
2-1
Dual P-Channel 60-V (D-S), 175C MOSFET
 
VDS (V) rDS(on) () ID (A)
–
60
0.17 @ VGS = –10 V 2.6
–
60
0.26 @ VGS = –4.5 V 2.1
S1D1
G1D1
S2D2
G2D2
SO-8
5
6
7
8
Top View
2
3
4
1
S1
G1
D1D1
P-Channel MOSFET
S2
G2
D2D2
P-Channel MOSFET
      
Parameter Symbol Limit Unit
Drain-Source Voltage VDS –60
V
Gate-Source V oltage VGS 20
V
Continuous Drain Current (TJ
=
175
C)
aTA = 25C
ID
2.6
A
Continuous
Drain
Current
(T
J =
175C)a
TA = 70C
I
D2.2
A
Pulsed Drain Current IDM 15
A
Continuous Source Current (Diode Conduction)aIS–2
Maximum Power Dissipation
aTA = 25C
PD
2.4
W
Maximum
Power
Dissipationa
TA = 70C
P
D1.7
W
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 175 C
  
Parameter Symbol Typ Max Unit
Junction
-
to
-
Ambient
at  10 sec
RthJA
62.5
C/W
J
unc
ti
on-
t
o-
A
m
bi
en
ta
Steady State
R
thJA 93
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board
For SPICE model information via the Worldwide W eb: http://www.vishay .com/www/product/spice.htm
Si9948AEY
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-2 Document Number: 70759
S-57253—Rev. B, 24-Feb-98
    
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = –250 mA –1 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = –60 V, VGS = 0 V –1
Zero
Gate
Voltage
Drain
Current
I
DSS VDS = –60 V, VGS = 0 V, TJ = 55C –10 m
On-State Drain CurrentaID(on) VDS v –5 V, VGS = –10 V –15 A
Drain
-
Source On
-
State Resistance
a
rDS(on)
VGS = –10 V, ID = –2.6 A 0.14 0.17
Drain
-
Source
On
-
State
Resistancea
r
DS(on) VGS = –4.5 V, ID = –2.1 A 0.20 0.26
Forward T ransconductance agfs VDS = –15 V, ID = –2.6 A 5.0 S
Diode Forward V oltage aVSD IS = –2.0 A, VGS = 0 V –1.2 V
Dynamicb
Total Gate Charge Qg
V30VV10VI26A
10 20
Gate-Source Charge Qgs VDS = –30 V, VGS = –10 V, ID = –2.6 A 2.5 nC
Gate-Drain Charge Qgd 1.8
T urn-On Delay Time td(on)
V30VR30W
820
Rise T ime trVDD = –30 V, RL = 30 W
I 1 A V 10 V R 6 W
10 20
T urn-Off Delay Time td(off)
DD ,L
ID^ –1 A, VGEN = –10 V, RG = 6 W23 40 ns
Fall T ime tf12 20
Source-Drain Reverse Recovery T ime trr IF = –2.0 A, di/dt = 100 A/ms 50 90
Notes
a. Pulse test; pulse width v300 ms, duty cycle v2%.
b. Guaranteed by design, not subject to production testing.
Si9948AEY
Vishay Siliconix
Document Number: 70759
S-57253—Rev. B, 24-Feb-98 www .vishay.com FaxBack 408-970-5600
2-3
    
0
3
6
9
12
15
0123456
0
3
6
9
12
15
012345
Output Characteristics T ransfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
VDS – Drain-to-Source Voltage (V)
– Drain Current (A)I D
VGS – Gate-to-Source Voltage (V)
– Drain Current (A)I D
– Gate-to-Source Voltage (V)
Qg – Total Gate Charge (nC)
VDS – Drain-to-Source Voltage (V)
C – Capacitance (pF)
VGS – On-Resistance (rDS(on) Ω)
ID – Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
TJ – Junction Temperature (C)
(Normalized)
– On-Resistance (rDS(on) Ω)
0
2
4
6
8
10
0246810 0.6
0.9
1.2
1.5
1.8
2.1
–50 –25 0 25 50 75 100 125 150 175
0
0.1
0.2
0.3
0.4
03691215
25C
150C
VGS = 10 V
Crss Coss
Ciss
3 V
VGS = 4.5 V
TC = –55C
VDS = 30 V
ID = 2.6 A VGS = 10 V
ID = 2.6 A
VGS = 10 through 6 V
4 V
5 V
0
200
400
600
800
0 102030405060
Si9948AEY
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-4 Document Number: 70759
S-57253—Rev. B, 24-Feb-98
    
0 0.3 0.6 0.9 1.2 1.5
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square W ave Pulse Duration (sec)
Normalized Effective T ransient
Thermal Impedance
– On-Resistance (rDS(on) Ω)
VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)
– Source Current (A)I S
TJ – Temperature (C) T ime (sec)
Power (W)
0
0.1
0.2
0.3
0.4
0246810
–0.4
–0.2
0.0
0.2
0.4
0.6
0.8
–50 –25 0 25 50 75 100 125 150 175
TJ = 175C
2
1
0.1
0.01 10–4 10–3 10–2 10–1 110 10
+3
ID = 2.6 A
ID = 250 µA
0
0.2
0.1
0.05
0.02
Single Pulse
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 93C/W
3. TJM – TA = PDMZthJA(t)
t1
t2
t1t2
Notes:
4. Surface Mounted
PDM
Variance (V)VGS(th)
TJ = 25C
30
60
90
120
0.001 0.01 0.1 1 10 100 1000
10+2
1
10
20
Duty Cycle = 0.5