Fuji power MOSFET Specification =S35Ki1i51:2 O 1 . Scope ; This specifies Fuji power MOSFET 2SK1512-0 1 D . Outline - 1) Construction N-channel enhancement mode power MOSFET I) Application for switching G I) Outview TO-3P (MK5C25623) Ss . Absolute maximun ratings at Te=25 {unless otherwise speci fied) Description Symbol | Characteristics Unit Remarks Drain-source voltage Vos 900 Vv Drain-gate voltage V per 900 V Res=20KQ | Continuous Drain current | Iy 10 A Pulsed drain current I pputse 30 A | Gate-source vol tage Ves + 80 V Maximum power dissipation Pp 150 W Operating and storage Tek 150 C temperature range T sts ~55 ~ +150 c . Electrical characteristics - at Tc=25C (unless otherwise speci fied) Static ratings Characteristics Description Symbol Conditions : Unit Min. Typ. Max, Drain-source Ip =t md breakdown voltage | B Voss Ves=0 V S00 V Gate threshold Ip ~1 mA voltage | Ves(th) | Vos=Ves 2.5 3.5 5.0 Vv Zero gate voltage | I pss Vos= 900V} Ten= 25 10 500 wa drain current Ves= OV loss T cn=125C 0.2 1.0 ma Gate~source Ves=t380V . leakage current Less Vos= OV 10 100 nA Drain-source on- In = 5A state resistance RaosCon) | Ves=10 V 1.0 1.2 Q | Ne NE teeth Ben AE dod 4 Se Be VVes wd Woo ewe re ee UE IL UL, LU,the express written consent of Fuji Electric Co. Lid, Dynamic ratings Characteristics Description Symbol Conditions Unit Min, Typ. Max. Forward In = 5A transconductance gis Vos=25V | 3.0 6.0 5 Input capacitance | Ciss 1500 2250 pF V ps=25 V Output capacitance! Coss Ves= 0V 200 300 pF { =IMHz Reverse transfer capacitance | Crss 100 150 pF t d(on) 40 60 ns Turn-on time Vec=600V tr Ves= 10V 120 180 ns 7 I p> 10A - t d(off) | Res= 252 240 360 ns Turn-off time tf 110 165 ns Reverse diode Characteristics Description Symbol Conditions Unit : Min, Typ. Max, Avalanche L=100 WH, T ch=25C capability I av *see Figl and 2 10 A Continuous reverse drain current Tor Te=25 10 A Pulsed reverse drain current I perv Tc=25T 30 A Diode forward lr =2 x Tor on-voltage Vsp Ves=0 VT n=25 0.96 1.44 V Reverse recovery ; time ter Ir =I or 600 ns ~dlr/dt = 100A/ uw Reverse recovery Tean=25C charge Qrr 4,5 uC 5. Thermal resistance Characteristics Description Symbol Conditions Unit Min, Typ. Max. R then-c 0.83 | c_/W | Thermal resistance Rthen-a 35.0 | "Ce /Ww DATE NAME J APPROVED DRAWN - ruceren Fuji Electric Co.,Ltd.Ine express written consent of Fup Elecene Ca Ltd FUJ!] POWER MOS FET TYPE 2SKI5I2-0] I5 5MAX I3+0 2 _ _, 4540 2 lOt0.2 Z2+0 | 1 Tr / | a Trade yo: H+f 4H Type TN s Trost name | NENT Loi No. [pskibi2 | 8} 2 cata an . a See [| S301 Lt | Note | TT La 22401 1 iil Fo 1 6 +0 | i640) - L Ol @ @it H | 1123? 0 538? 5 450 | 2 3S 450 | ie) PRE-SOLDER DIMENSIONS ARE IN MILLIMETERS CONNECTION {+ + 4] O ORAL @ DRAIN O @ SOURCE JEDEC TO-22BAA EIAJ SC-65 Note |! Guaranteed mark of avalanche ruggedness DATE NAME }APPROVED DRAWN 1970-12-27 MARIIYAMA Fuji Electric Co.,Ltd. M