2009. 11. 17 1/4
SEMICONDUCTOR
TECHNICAL DATA
2N7000A
N CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
Revision No : 3
INTERFACE AND SWITCHING APPLICATION.
FEATURES
·High density cell design for low RDS(ON).
·Voltage controolled small signal switch.
·Rugged and reliable.
·High saturation current capablity.
MAXIMUM RATING (Ta=25℃)
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2 3
B
AJ
KG
H
FF
L
E
C
E
C
M
N
0.45 MAXM
1.00N
1. SOURCE
2. GATE
3. DRAIN
+
_
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=10μA60 - - V
Zero Gate Voltage Drain Current IDSS VDS=48V, VGS=0V - - 1 μA
Gate-Body Leakage, Forward IGSSF VGS=15V, VDS=0V - - 1 μA
Gate-Body Leakage, Reverse IGSSR VGS=-15V, VDS=0V - - -1 μA
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage (RGS≤1㏁)VDGR 60 V
Gate-Source Voltage VGSS ±20 V
Drain Current
Continuous ID200
mA
Pulsed IDP 500
Drain Power Dissipation PD400 mW
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
D
G
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
EQUIVALENT CIRCUIT
2009. 11. 17 2/4
2N7000A
Revision No : 3
ELECTRICAL CHARACTERISTICS (Ta=25℃)
ON CHARACTERISTICS (Note 1)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Threshold Voltage Vth VDS=VGS, ID=1mA 0.8 2.1 3 V
Drain-Source ON Resistance RDS(ON)
VGS=10V, ID=500mA - 1.2 5 Ω
VGS=4.5V, ID=75mA - 1.8 5.3
Drain-Source ON Voltage VDS(ON)
VGS=10V, ID=500mA - 0.6 2.5
V
VGS=4.5V, ID=75mA - 0.14 0.4
On State Drain Current ID(ON) VGS=4.5V, VDS=10V 75 600 - mA
Forward Transconductance gFS VDS=10V, ID=200mA 100 320 - mS
Drain-Source Diode Forward Voltage VSD VGS=0V, IS=200mA - 0.76 1.15 V
DYNAMIC CHARACTERISTICS
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Input Capacitance Ciss
VDS=25V, VGS=0V, f=1MHz
- 20 50
pFReverse Transfer Capacitance Crss - 4 5
Output Capacitance Coss - 11 25
Switching Time
Turn-On Time ton VDD=15V, RL=25Ω, ID=200mA,
VGS=10V, RGEN=25Ω
- - 10
nS
Turn-Off Time toff - - 10
OUT
OUTPUT, V 10% 10%
10%
90% 90%
90%
50% 50%
f
t
r
t
IN
INPUT, V
INVERTED
PULSE WIDTH
d(on)
t d(off)
t
on
toff
t
SWITCHING TIME TEST CIRCUIT
GS
V
GEN
R
V
DD
R
L
V
OUT
DUT
D
G
S
IN
V
Note 1) Pulse Test : Pulse Width≦300㎲, Duty Cycle≦2.0%
2009. 11. 17 3/4
2N7000A
Revision No : 3
DRAIN-SOURCE VOLTAGE V (V)
DRAIN CURRENT I (A)
D
0
DS
0
I - V
DDS
1
COMMON SOURCE
Ta=25 C
V =3V
GS
2345
0.5
1.0
1.5
2.0
4V
5V
6V
8V
7V
9V
10V
GATE-SOURCE VOLTAGE V (V)
DRAIN CURRENT I (A)
D
GS
I - V
DGS
0
0.5
0.4
COMMON SOURCE
Ta=25 C
7V
6V5V4.5V4V
V =10V
GS
0.8 1.2 1.6 2.0
1.5
1.0
2.0
2.5
3.0
9V
8V
0
0
2
COMMON SOURCE
Ta=-55 C
V =10V
GS
46810
0.8
0.4
1.2
1.6
2.0
Ta=25 C
Ta=125 C
DRAIN SOURCE ON- RESISTANCE
R (Ω) (NORMALIZED)
DRAIN CURRENT I (A)
D
DS(ON)
R - I
DS(ON) D
0
0
0.4
COMMON SOURCE
Ta=125 C
V =10V
GS
0.8 1.2 1.6 2.0
1.0
0.5
1.5
2.0
3.0
2.5
Ta=25 C
Ta=-55 C
DRAIN SOURCE ON- RESISTANCE
R (Ω) (NORMALIZED)
DRAIN CURRENT I (A)
D
DS(ON)
R - I
DS(ON) D
-50
0.5
-25
COMMON SOURCE
I =500mA
D
V =10V
GS
0255075100125150
1.0
0.75
1.25
1.5
2.0
1.75
DRAIN SOURCE ON- RESISTANCE
R (Ω) (NORMALIZED)
JUNCTION TEMPERATURE T ( C)
j
DS(ON)
R - T
DS(ON) j
-50
0.8
-25
COMMON SOURCE
V =V
DS GS
I =1mA
D
0255075100125150
0.9
0.85
0.95
1.0
1.1
1.05
JUNCTION TEMPERATURE T ( C)
j
V - T
th j
NORMALIZED GATE
SOURCE THRESHOLD VOLTAGE Vth (V)
2009. 11. 17 4/4
2N7000A
Revision No : 3
BODY DIODE FORWARD VOLTAGE V (V)
REVERSE DRAIN CURRENT I (A)
S
SD
I - V
SSD
0.01
0.2
0.03
0.1
0.3
1
3
10 COMMON
SOURCE
V =0
GS
30
Ta=-55 C
0.4 0.6 0.8 1.0 1.2 1.4
Ta=25 C
Ta=125 C
COMMON SOURCE
Ta=25 C
f=1MHz
V =0
DRAIN-SOURCE VOLTAGE V (V)
CAPACITANCE C (pF)
1105330
C - V
GS
DS
50
DS
Crss
oss
C
Ciss
1
5
3
10
50
30
100
GATE CHARGE Q (nC)
GATE-SOURCE VOLTAGE V (V)
GS
g
V - Q
GS g
0
0
0.4
COMMON SOURCE
V =25V
DS
I =115mA
D
0.8 1.2 1.6 2.0
4
2
6
8
10
I - V
DS
DRAIN-SOURCE VOLTAGE V (V)
DRAIN CURRENT I (A)
DDS
D
1310 100305
SINGLE PULSE
Ta=25 C
GS
V =10V
100µs
1mS
10mS
100mS
1s
10s
DC
DS(ON)
R LIMIT
50
2
0.005
0.01
0.03
0.05
0.1
0.3
0.5
1
P - Ta
D
AMBIENT TEMPERATURE Ta ( C)
02040
100
D
0
DRAIN POWER DISSIPATION P (mW)
60 80 100 120 140 160
200
300
400
500
600
700
