SCF2N6847T2 JANTX2N6847 JANTXV2N6847 POWER MOSFET FOR RUGGED ENVIRONMENTS TO-205AF / TO-39 DESCRIPTION REF: MIL-PRF-19500/563 P-Channel -200 Volt < 1.5 Ohms -2.5 Amp SEMICOA's MOSFET technology is designed for rugged environments providing excellent long term reliability. SEMICOA's long heritage providing military grade technology and packaging allows these devices to be used for ground based telecommunications, vehicles, ships, weapon systems and other application where failure is not an option. FEATURES Available in JANTX and JANTXV equivalent levels RDS(ON) < 1500 m Simple Drive Requirements Low Gate Charge Ease of Paralleling Hermetically Sealed Die Available ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS lD @ VGS = 4.5 V, TC = 25 C Continuous Drain Current -2.5 lD @ VGS = 4.5 V, TC = 100 C Continuous Drain Current -1.6 IDM Pulsed Drain Current (1) -10 PD@ TC = 25 C Max Power Dissipation 20 W Linear Derating Factor 0.16 W/C VGS Gate to Source Voltage 20 V EAS Single Pulse Avalanche Energy (2) 180 mJ IAR Avalanche Current (1) - A TJ TSTG Operating Junction Storage Temperature Range -55 to 150 Lead Temperature Weight A C 300 C .98 typical g For footnotes refer to the last page 333 McCormick Avenue Costa Mesa, CA 92626 714-979-1900 www.semicoa.com sales@semicoa.com MDS6847 REV. NEW PAGE 1 SCF2N6847T2 Electrical Characteristics @ TJ 25C (unless otherwise specific) PARAMETER MIN TYP MAX UNITS BVDSS Drain to Source Breakdown Voltage -200 - - V BVDSS/TJ Temperature Coefficient of Breakdown Voltage - -0.22 - V/C - - 0.150 - - 0.152 RDS(ON) Static Drain to Source On-State Resistance TEST CONDITIONS VGS = 0 V, ID = -1.0 mA Reference to 25 C, ID = -1.0mA VGS = -10 V, ID = -1.6 A (4) VGS = -10 V, ID = -2.5 A (4) VGS(th) Gate Threshold Voltage -2.0 - -4.0 V gfs Forward Transconductance 1.0 - - S() IDSS Zero Gate Voltage Drain Current - - 25 - - 250 A VDS = VGS, ID = -250 A VDS 15 V, IDS = -1.6 A (4) VDS = -160 V, VGS = 0V VDS = -160 V, VGS = 0V, Tj = 125 C IGSSF Gate to Source Leakage Forward -100 nA VGS = -20 V IGSSR Gate to Source Leakage Reverse 100 nA VGS = 20 V Qg Total Gate Charge - - 15 Qgs Gate to Source Charge - - 3.2 nC VGS = 10 V, ID = -2.5 A , VDS = -100 V Qgd Gate to Drain (Miller) Charge - - 8.4 Td(on) Turn On Delay Time - - 50 Tr Rise Time - - 70 Td(off) Turn Off Delay Time - - 40 ns VDD = -100 V, ID = -2.5 A, RG = 7.5 Tf Fall time - - 50 CISS Input Capacitance - - - COSS Output Capacitance - - - pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz CRSS Reverse Transfer Capacitance - - - Source-Drain Diode Rating and Characteristics PARMETER MIN TYP MAX UNITS TEST CONDITIONS IS Continuous Source Current (Body Diode) - - -2.5 A ISM Pulse Source Current (Body Diode) - - -10 A VSD Diode Forward Voltage - - -4.8 V Ti = 25 C, IF = -2.5 A, VGS = 0 V (4) Trr Reverse Recovery Time - - 300 ns Ti = 25 C, IF = -2.5 A, di/dt < 100 A/ S, VDD 50 V (4) For Footnotes refer to the last page 333 McCormick Avenue Costa Mesa, CA 92626 714-979-1900 www.semicoa.com sales@semicoa.com MDS6847 REV. NEW PAGE 2 SCF2N6847T2 TO-205 AF Case Outline and Dimensions Dimensions Symbol Inches Min Max Min Max CD .305 .335 7.75 8.51 CH .160 .180 4.07 4.57 HD .335 .370 8.51 9.40 LC .200 typ .016 .021 0.41 0.53 LL .500 .750 12.70 19.05 LU .016 .019 0.41 0.48 .050 Source Lead 2 Gate Lead 3 Drain 1.27 L2 .250 6.35 P .100 2.54 Q Lead 1 5.08 typ LD L1 .050 1.27 TL .029 .045 0.74 1.14 TW .028 .034 0.71 0.86 r Pin Assignment Millimeters .010 45 TP 0.25 45 TP Footnotes: 1. 2. 3. 4. Repetitive Rating: Pulse width limited by maximum junction temperature VDD = -50 V starting TJ = 25 C, Peak IL = -2.5A ISD 2.5A, di/dt -95 A/S, VDD -200 V, Tj 150C, Rg = 7.5 Pulse width 300s; Duty Cycle 2% Visit us at www.semicoa.com for sales and contact information. Data and specification subject to change without notice. 333 McCormick Avenue Costa Mesa, CA 92626 714-979-1900 www.semicoa.com sales@semicoa.com MDS6847 REV. NEW PAGE 3