2 SD 2463 Nec Si-N-Darl+Di int. Z-Di(C_ B), 31/31(+4)V, 22/3A, 1W 9b (SP-8) ; hFE=2k, ..30k, 0,5/4s oe _ 2 SD 2464 Mat Si-N 15/10/10V, 5/8A, 0,75W, 170MHz, lo-sat<0,5V(3A) Je siT0-92 2802179 = 7e(9mm) - 2.4482, 201145 | 28D 2472 Mat Si-N SMD, 10/10V, 0,5/0,6A, 120MHz, lo-sat<0,17V(0,25A) 35d =$0T-23 2804577 2 SD 2473 _ Mat __ Si-N SMD, 20/20V, 0,5/0,6A, lo-sat<0,2V(0,25A) 35d =S0T-23 | __ 2804519, 2804577 28D 2474 _ Mats SiN SMD, 10/10V, 2/2,4A, 180MHz, sat<0,25V(1A) {2SD2474 39b SOT-89 _ 2803443, 2862982, 201621 28D 2478 Rhm Si-N-Darl P, 80/80V, 4/6A, 30W, 40MHz, hFE=1k...10k 17 SOT-186 (28D1415)8 17 2501788, (BDT 61BF, 2501414, 25D1589++)8 2 SD 2482 Mat Si-N =28D2472: 35a(2mm) + SOT-323 2804555 28D 2483 _Mat_ SiN = 282473: 36a(2mm) _ SOT-323 2804555 - 2 SD 2484 Hit Si-N 50/50V, 2/3A, 0,9W, lo-sat<0,2V(1A) 7e(9mm) - TO-92L 2$D1207 7(9mm) 2503726, 2801207, 25D2069, 2SD2177,++ 2 SD 2485 Hit Si-N =2SD2484: 80/80V i 7e(9mm) __TO-92L_ 283328, 264489, 2502182 2 SD 2488 Sak Si-N-Darl P, 200/200V, 15A, 130W, 70MHz, hFE=5k...30k {2SB1620 18j TO-3P - 2 SD 2489 Sak Si-N-Darl =28D2488: 17A, 200W {28B1621 20) TO-3P - 2 SD 2490 Sak Si-N-Dart _=2SD2488: Iso, 85W (2SB1622_18c (FM100) : 2 SD 2491 Hit Si-N Vid Out, 160/160V, 0,1A, 8W, 140MHz 14b TO-126 Iso = (28C3601)3 14h 2803788, 2SC3955...56 2 SD 2492 Hit Si-N =28D2491; 200/200V _ 14b TO-126 Iso (2803601) 14h 2803788, 2SC3955...56 2 SD 2493 Sak Si-N-Darl P, 110/11 0V, 6A, BOW, BOMHz, HFE=5k...30k {2SB1624 18} TO-3P 2802221, 25D2255, 25D2340, 2502386 2 SD 2494 Sak Si-N-Darl =28D2493: Iso {28B1625 18 {FM100} 28D1893.,.94, 28D2438 2 SD 2496 Sak_ Si-N-Darl __ =28D2493: Iso, 30W {2SB1626 17c TQ-220 Iso 2802025 2 SD 2496 Mat Si-N =2SD601A: oo 35d __ 807-23 oe >2SD601A _ 28D 2497 Hit Si-N 40/20V, 5/8A, 0,75W, lo-sat<0,3V(3A) __T0-92 (2802179)? 9 2804482, 2601145, 2502243, (28D2249+4)17 28D 2504 Mat Si-N =28D2464: 5/9A _ _ 10-92 25D2179 7(9mm) 2804482, 25D1145 28D 2529 Mat Si-N =28D1938: =$0T-23 >28D1938 2 SD 2532 Hit Si-N =28D2484: SMD SOT-89 2804409, 2504541, 2SD1623...24 28D 2533 Hit __Si-N _22$D2485: SMD 39b SOT-89 2864409, 2804541 2 SD 2540 Hit Si-N 2802497: SMD 39b SOT-89 2801628 2 SF 1168(A} Mat SOHz-Thy _ 200(A=400)V, 6A, Igt/th<25/15mA, toff=30us 22a T0-66 MCR 218..., TAG 625-..., TAG 651-....44 2 SF 1188 Say F-Thy TV-HA, +650/-12V, 3,2A(Tc=60), Igt<30mA, tq<2,5ps 22a TO-66 TD 3FP 800H'* = 17f $ 3703, (TD 3F700H, TD 4F700H,++}! (Hinlauf/Trace} 2 SF 1189 Say F-Thy TV-HA, +600/-6V, 3,2A(Tc=60), Igt<40mA, tq<4,3ys 22a TO-66 1D 3FP 800R1* = 17f 3702, (TD 3F800R, TD 4F800R, ++)! __ ARiicklauf/Retrace) - 2 SF 1418C...G Say F-Thy 200...600V, 3,2A(Tc=60), 7,5A=, Igt<35mA, tq<4,3us 224 10-66 (TAG 626-600)5 = 17e BIW 27S/..., T 38... TAG 670...671S-... _ C=200, D=300, E=400, F=500, G=600V : _ 2 SF 1420 D...G Say F-Thy 300...700V, 3,2A(Te=75), 5A~, Igt/th<35/<30mA 22a T0-66 (TAG 626-600)5 17e BTW 278/..., T 3S..., TAG 670...671S-... oo __D=300, E=400, F=500, G=600, H=700V _ 2 SF 1450-200...600 Hit 50Hz-Thy =CP 8C...G >CP 8... 2 SF 1451-200...600 Hit SOHz-Thy _=CP9C...G | OP 9... ae 2SH 2SH 11 Nec, Tho UJT-P 35/30V, 50mA, iEM=2A, 0,45W, Ip<12uA, lv>7mA, 2b T0-5 n=0,58...0,75, Rbb=4,5kQ 2SH12 NecTho _-WJT-P =2SH11: n=0,47...0,62 / 2b TO-5 : 2SH 13 Tos UJT-P 55/60V, 50mA, iEM=2A, 0,45W, Ip<6pA, lv>11mA, 2b T0-5 - n=0,47...0,75, Rbb=4,7...10kQ 2SH14 Tos UJT-P =2SH13: ip<8yA, lv>8mA, n=0,45...77, Rbb=4,3...12kQ 2b TO-5 : 2 SH 15 Tos UJT-P 25/30V, 50mA, iEM=2A, 0,45W, Ip<12pA, !v>7mA, 2b T0-5 _ n=0,47...0,67, Rbb>4,5kQ. ee . : 2 SH 16(A) Nec, Tho UJT-P 30/30V, 50mA, iEM=1A, 0,25W, Ip<12uA, lv>4mA, 7g T0-92 2N2646P 7=0,5...0,84, Rbb=4...9kQ 2SH17 Nec,Tho UJT-P =2SH16: Ip<4pA, lv>2mA, n=0,5...0,67 7g TO-92 - 25H 18 . Gen,Mot UJT-P =2SH16: 0,3W 2b,5e 10-18, -72 - 28H 19 Gen,Mot_-UJT-P =2SH17: 0,3W 2b,58 TO-18, -72 : _ 2 SH 20 Tos UJT-P 55/60V, 50mA, iEM=1A, 0,25W, Ip<3,5pA, Iv>6mA, 2b T0-18 - n=0,7...0,85, Rbb=4...12kQ 2 SH 21 Tos UST-P =2SH20: Ip<4yA, lv>4mA 2b 70-18 ot __ 2 SH 22 Tos UJT-P 25/30, 50mA, iEM=1A, 0,25W, Ip<4uA, lv>4mA, 2b T0-18 2SH21 . 7=0,65...0,85, Rbb>4kQ ee __ __ __. 2 SH 23 Nec UJT-P 25/30V, 100mA, Ifm=2A, 0,45W, Ip<4yA, lv>7mA, 2b TO-5 2SH20 n=0,58...0,64, Rbb=8...20kQ 2 SH 24 Nec UJT-P =2$H23: Ip<12uA 2b 10-5 - 2SH25 | Nec UJT-P _ =28H23: 75mA, tim=1A, 0,3W 7b 10-92 : 28J 28/11 Tos P-FET Uni, 20V, Idss=0,05...0,9mA, Up=0,7...5V 5n 10-17 2N2606, 2N5797 28J 12 Tos P-FET =28J11: 1ds8=0,09...0,9MA fn 0-17 oe ____2N2606, 2N5797 a 2113 Tos P-FET Uni, 20, Idss=1...12mA, Up=t...6V _ RafG=case} TOS _ ee 28d 15 Fui P-FET Uni, 18V, idss=1,5mA, Up<6V 2a(G=case) TO-18 2N5460, 2N5463, 28/103, 25J105 2 SJ 16 Fui P-FET Uni, 18V, tdss=1,5mA, Up<6V 2a(G=case) TO-18 2N5460, 2N5463, 28/103, 253105 28J17 Son P-FET _LE In, 20V, Idss>0,11mA 40d - _ 2 SJ 18 _ Son P-FET VFET, 170V, 5A, 63W, 16Q {2SK60_ 23a T0-3 - 28/19 Nec P-FET _VFET, LF, 140/30V, 0,1A, 0,8W {28K69 2a _ TO-5 - 28/20 Nec P-FET VFET, 100/40V, 10A, 100W, on=10Q 2SK70 23a T0-3 - 28)21 Nec P-FET VFET, 160/30V, 15W, Idss=30...300 (2SK71_ 22a TO-66 : 2 SJ 22 Son P-FET LF, In, 80V, Idss=0,3...0,7r 2d TO18 oe 2.8 29 Hit P-FET VET, 140V, 10A, 100W, on= BB a TO-3 - - _ 2 Sd 32 Shi P-FET LFS, 150V, 0,6W, on=3500 - 285.33 Shi P-FET =28J32: 200V . . 2 $J 39 Mit P-FET ___ Dual, 50V, 20mA, Idss=1...12mA, Up<6V 7-SIP (DGSsDGS) - 2 $J 40 Mit P-FET __Analog-5, 50V, Idss=0,6...12mA, Up=0,3...6V_ (25K381_ 41a __ - 2 8) 43 Mat P-FET __Uni, 50V, 20mA, Idss=0,5...12mA, Up20,2...3V {2SK127 7a 70-92 28129 2$J 44 Nec P-FET Uni In, 40V, 30mA, Idss=1...18mA, Up=0,2...1,5V 7a 70-92 2N5021, 25J74 Ur<20mV {2SK163 28345 Nec P-FET =28K44: Ur<50mV a To-92 2N5021, 25474 oe 28d 47 Hit MOS-P-FET-e VFET, 100/14V, 7A, 100W, on<1,7Q, 25/24ns {28K132 23e T0-3 2S8J55...56, 25J160...162 2 SJ 48 Hit MOS-P-FET-e =28J47: 120/14V {28K133 23e T0-3 28J55...56, 28J160...162 2$J 49 Hit MOS-P-FET-e =28J47: 140/14V {28K134 23e TO-3 25J55...56, 2161...162 2$J50 Hit MOS-P-FET-e =28J47: 160/14V {2SKT35_23e T0-3 28J55...56, 25J162 28U 51 Hit P-FET S,LF In, 40V, 200mA, Idss=6...50mA, Up<1,1V_ {2SK151_ 7a(9mm) _-TO-92L 28J70 2 SJ 55 Hit MOS-P-FET-e VFET, 180/20V, 8A, 125W, on=1<1,7Q {28K175 23 T0-3 - 28/56 Hit MOS-P-FET-e _=2SJ55: 200/20V {28K176 _23e T0-3 - _ 283 68 Hit P-FET S,LF In, 40V, 30mA, Idss=1,6...12mA, Up=0,13...1,5V Ta T0-92 285104, 283107...108 28369 Hit P-FET S,LF In, 40V, 30mA, Idss=2,5...20mA, Up=0,13...1,5V 7a TO-92 28J104, 25J107...108 2$J70 Hit P-FET S,LF In, 40V, 200mA, Idss=6...50mA, Up=0,13...1,5V 7a(9mm) = TO-92L 28J51