High Conductance DO-35 Diodes
1N4150
Absolute Maximum Ratings Symbol Value Unit
Average Forward Rectified Current at TAmbient = 25 o C IAV 0.65 Amp
Maximum Non-Repetitive Surge (8.3 mSecs. 1/2 sine) IFSM 2.0 Amps
Junction Temperature Range Tj-65 to +200 oC
Storage Temperature Range TS -55 to +200 oC
Max. Average Power Dissipation Pdiss 250 mW
Characteristics at T = 25 oC
Peak Maximum Maximum Maximum Leakage Minimum
Inverse Voltage Average Rectified Forward Voltage Current Saturation
(MIN.) Current Drop (IR) @ P IV Voltage
(PIV) (IO)(V
F) @ 0.1A 25 oC 150 oC(@0.1 mA)
Type Volts Amps Volts µA µA Volts
1N482B 30 0.2 1.0 0.025 5 40
1N483B 60 0.2 1.0 0.025 5 80
1N484B 125 0.2 1.0 0.025 5 150
1N485B 175 0.2 1.0 0.025 5 200
1N486B 225 0.2 1.0 0.025 5 250
Features
Humidity proof glass
Thermally matched system
No thermal fatigue
No applications restrictions
Sigma Bond™ plated contacts
100% guaranteed solderability
Problem free assembly
Six Sigma quality
LL-35 MiniMELF types available
LL-35 Glass miniMELF package available, substitute an LL prefix instead of "1N"..
Use Advantages
Used as a general purpose diode in power supplies, or in clipping and steering
applications. Operation at temperatures up to 200 degrees C, no derating.
Can be used in harsh environments where hermeticity and low cost are
important. Compatible with all major automatic pick and place mounting
equipment. May be used on ceramic boards along with high temperature IR
solder reflow.
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
DO-35 Glass Package
Dia.
0.06-0.09"
1.0"
25.4 mm
(Min . )
Length
0.120-.200"
3.05-5.08-
mm 1.53-2.2 8 mm
0.018-0.022"
0.458-0. 558 mm
Lead Dia.
1N482B
thru
1N486B
