Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High-Current Switching Applications
Ordering number:ENN2085B
2SB1203/2SD1803
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2503TN (KT)/92098HA (KT)/8309MO/3097AT, TS No.2085—1/5
Package Dimensions
unit:mm
2045B
[2SB1203/2SD1803]
Applications
Æ Relay drivers, high-speed inverters, converters, and
other general high-current switching applications.
Features
Æ Low collector-to-emitter saturation voltage.
Æ High current and high f
T
.
Æ Excellent linearity of h
FE
.
Æ Fast switching speed.
Æ Small and slim package making it easy to make
2SB1203/2SD1803-applied sets smaller.
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
unit:mm
2044B
[2SB1203/2SD1803]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
5.0
6.5
0.85
0.7
0.6
1.5
5.5
7.0
0.8
1.6
7.5
0.5
1.2
2.3 0.5
123
4
2.3 2.3
6.5 2.3 0.5
1.55.5
0.8
7.0
1.2
2.5
5.0
0.85 0.5
1.2
0 to 0.2
2.3 2.3
0.612
4
3
2SB1203/2SD1803
No.2085—2/5
( ) : 2SB1203
Specifications
Absolute Maximum Ratings at Ta = 25ßC
˚C
˚C
Electrical Characteristics at Ta = 25ßC
Tc=25˚C
Switching Time Test Circuit
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC 06)–(V
egatloVrettimE-ot-rotcelloCV
OEC 05)–(V
egatloVesaB-ot-rettimEV
OBE 6)–(V
tnerruCrotcelloCI
C5)–(A
)esluP(tnerruCrotcelloCI
PC 8)–(A
noitapissiDrotcelloCP
C1W
02W
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC VBC I,V04)–(= E0=1)–(Aµ
tnerruCffotuCrettimEI
OBE VBE I,V4)–(= C0=1)–(Aµ
niaGtnerruCCD hEF 1V
EC I,V2)–(= CA5.0)–(=*07*004
hEF 2V
EC I,V2)–(= CA4)–(=53
tcudorPhtdiwdnaB-niaGf
TVEC I,V5)–(= CA1)–(= )031(zHM
081zHM
ecnaticapaCtuptuOC
bo VBC zHM1=f,V01)–(=04)06(Fp
egatloVnoitarutaSrettimE-ot-rotcelloCV
)tas(EC ICI,A3)–(= BA51.0)–(= 022004Vm
)082–()055–(Vm
egatloVnoitarutaSrettimE-ot-esaBV
)tas(EB ICI,A3)–(= BA51.0)–(=59.0)–(3.1)–(V
egatloVnwodkaerBesaB-ot-rotcelloCV
OBC)RB( ICI,Aµ01)–(= E0=06)–(V
egatloVnwodkaerBrettimE-ot-rotcelloCV
OEC)RB( ICR,Am1)–(= EB =∞05)–(V
egatloVnwodkaerBesaB-ot-rettimEV
OBE)RB( IEI,Aµ01)–(= C0=6)–(V
emiTNO-nruTt
no tiucriCtseTdeificepseeS)05(05sn
emiTegarotSt
gts tiucriCtseTdeificepseeS )054(sn
005sn
emiTllaFt
ftiucriCtseTdeificepseeS02)02(sn
* : The 2SB1203/2SD1803 are classified by 0.5A hFE as follows :
knaRQRST
hEF 041ot07002ot001082ot041004ot002
VRRB
VCC=25VVBE= --5V
++
50Ω
INPUT RL
OUTPUT
100µF 470µF
PW=20µsIB1
D.C.≤1% IB2
IC=10IB1= --10IB2=2A
(For PNP, the polarity is reversed.)
2SB1203/2SD1803
No.2085—3/5
--5
--4
--3
--2
--1
2SB1203
From top
--100mA
--90mA
--80mA
--70mA
--60mA
2SD1803
From top
50mA
45mA
40mA
35mA
30mA
IC-- VCE
IB=0
10mA
20mA
15mA
25mA
5mA
ITR09181
00--2.0--1.6--0.4 --0.8 --1.2
IC-- VCE
--10mA
--50mA
--20mA
--30mA
--40mA
IB=0
ITR09180
5
4
3
2
1
00 0.8 2.00.4 1.2 1.6
Collector Current, IC—A
Collector-to-Emitter Voltage, VCE —V
Collector Current, IC—A
Collector-to-Emitter Voltage, VCE —V
hFE -- IC
Ta=75°C
--25°C
25°C
Ta=75°C
--25°C
25°C
ITR09186
100
1000
5
7
3
2
10
5
7
3
2
100
1000
5
7
3
2
10
5
7
3
2
0.01 0.1 1.0--1.0--0.1
325573257 --10
32577 325573257 10
32577
--0.01
hFE -- IC
ITR09187
2SB1203
VCE= --2V
2SD1803
VCE=2V
2SB1203
VCE= --2V
Ta=75°C
--25°C
25°C
Ta=75°C
--25°C
25°C
--6
--5
--4
--3
--1
--2
0
6
5
1
2
4
3
0
0--0.2 --0.4 --0.6 --0.8 --1.2--1.0
IC-- VBE
ITR09184
2SD1803
VCE=2V
0 0.2 0.4 0.6 0.8 1.21.0
IC-- VBE
ITR09185
--5
--4
--3
--2
--1
2SB1203 2SD1803
IC-- VCE
IB=0
30mA
25mA
20mA
15mA
10mA
5mA
ITR09183
00--10--8--2 --4 --6
IC-- VCE
--10mA
--15mA
--20mA
--25mA
--30mA
--5mA
IB=0
ITR09182
5
4
3
2
1
004 10268
Collector Current, IC—A
Collector-to-Emitter Voltage, VCE —V
Collector Current, IC—A
Collector-to-Emitter Voltage, VCE —V
Collector Current, IC—A
Base-to-Emitter Voltage, VBE —V
Collector Current, IC—A
Base-to-Emitter Voltage, VBE —V
DC Current Gain, hFE
Collector Current, IC—A
DC Current Gain, hFE
Collector Current, IC—A
2SB1203/2SD1803
No.2085—4/5
--0.1 --1.0
3257 3257 --10
3257
2SB1203
VCE= --5V
fT-- IC
100
3
2
7
5
1000
3
2
7
5
10
ITR09188
0.1 1.0
3257 3257 10
3257
2SD1803
VCE=5V
fT-- IC
100
3
2
7
5
1000
3
2
7
5
10
ITR09189
Collector Current, IC—A Collector Current, IC—A
Gain-Bandwidth Product, fT— MHz
Gain-Bandwidth Product, fT— MHz
VBE(sat) -- IC
--1.0
--10
5
7
3
5
7
3
2
1.0
10
7
5
3
7
5
3
2
2SD1667
ITR09194
VBE(sat) -- IC
ITR09195
Ta= --25°C
25°C
2SB1203
IC/ IB=20
2SD1803
IC/ IB=20
75°C
Ta=75°C
--25
°C
Ta=75°C
--25
°C
Ta= --25°C
25°C
75°C
VCE(sat) -- IC
--0.1--0.01 23 55723577--1.0 23 57
--10
--1000
5
3
2
7
5
3
2
5
3
2
7
--100
--10
VCE(sat) -- IC
ITR09192 ITR09193
0.01 0.1
7235572357
1.0 23 57
10
--0.1--0.01 23 55723577--1.0 23 57
--10 0.01 0.1
7235572357
1.0 23 57
10
1000
5
3
7
2
5
3
7
2
5
3
2
100
10
25°C
2SB1203
IC/ IB=20
2SD1803
IC/ IB=20
25°C
Cob -- VCB
372
1.0 10
5372575 100
ITR09191
2SD1803
f=1MHz
Cob -- VCB
3
2
7
5
3
2
5
100
10
3
2
7
5
3
2
5
100
10
372
--1.0 --10
5372575 --100
ITR09190
2SB1203
f=1MHz
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) — mV
Collector Current, IC—A
Collector-to-Emitter
Saturation Voltage, VCE(sat) — mV
Collector Current, IC—A
Base-to-Emitter
Saturation Voltage, VBE(sat) — V
Collector Current, IC—A
Base-to-Emitter
Saturation Voltage, VBE(sat) — V
Collector Current, IC—A
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2003. Specifications and information herein are subject
to change without notice.
2SB1203/2SD1803
PS No.2085—5/5
0
24
20
16
12
8
4
1
2006040 80 100 140120 160
PC-- Ta
ITR09197
No heat sink
2SB1203 / 2SD1803
10ms
1.0
10
5
7
2
3
5
7
2
3
5
7
2
2
3
0.1
0.01 101.0 2537 2 537
0.1 2537 100
DC operation Ta=25°C
DC operation Tc=25°C
Tc=25°C
Single pulse
For PNP, minus sign is omitted.
ICP=8A
1ms
IC=5A
ITR09196
2SB1203 / 2SD1803
A S O
100ms
Collector-to-Emitter Voltage, VCE —V
Collector Current, IC—A
Collector Dissipation, P
C
—W
Ambient Temperature, Ta — ßC
