MOTOROLA @ SEMICONDUCTOR EEE TECHNICAL DATA MOTOROLA SC (DIODES/0OPTO) bHE D MM 6367255 0086219 BYT MINOT? 1N1199B thru 1N1206B 1N1204B is a Motorola Preterred Device applications requiring @ High Current Surge 250 Amperes @ Ty = 200C 12 Amperes @ Tc = 150C MEDIUM-CURRENT SILICON RECTIFIERS @ Peak Performance at Elevated Temperature Compact, highly efficient silicon rectifiers for medium-current "MAXIMUM RATINGS MEDIUM-CURRENT SILICON RECTIFIERS 50-600 VOLTS 12 AMPERES DIFFUSED JUNCTION CASE 245A-02 DO-203AA METAL MECHANICAL CHARACTERISTICS CASE: Welded, hermetically sealed construction FINISH: All external surfaces are corrosion- resistant and the termina! lead is readily solderable POLARITY: Cathode to case (reverse polanty units are available and denoted by an R suffix, 1.e., 1N1202RB) MOUNTING POSITION: Any MOUNTING TORQUE: 15 in-lb max MAXIMUM TERMINAL TEMPERATURE FOR SOLDERING PURPOSES: 275C for 10 seconds at 3 kg tension WEIGHT: 6 grams (approx.) i ati IN IN aN IN IN 1 Characteristic Symbol | | 198| 12008 | +2028 {12048 | 12088 | UNit Peak Repetitive Reverse Voltage VRRM Volts Working Peak Reverse Voltage | Vawn| 50 | 100 | 200 | 400 | 600 DC Blocking Voltage VR Non-Repetitive Peak Paverse VRSM Valts Voltage (Halfwave, single 100 | 200 | 350 | 600 | B00 phase, 60 Hz peak) Average Rectified Forward Current lo Amp {Single phase resistive toad 12 60 Hz, Tc = 150C) Non Repetitive Peak Surge Current lesm Amp (Surge applied at rated load 250 {for 1 cycle) . conditions, half wave single phase, 60 Hz} Operating and Storage Junction | TJ. Tgig -65 10 +200 mw} C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case Rguc 20 Cw *ELECTRICAL CHARACTERISTICS Characteristic and Conditions Symbol Max Unit Maximum Instantaneous Forward Voltage VE 12 Volts (ip = 40 A Tc = 25C) Maximum Reverse Current IR 10 mA (Rated de voltage Tc = 150C) Maximum Average Reverse Current at 'Ro 09 mA Rated Conditions DC Forward Voltage Ve 11 Volts (lp = 12 A. Te = 25C) Reverse Recovery Time (ipaq = 40 A trp 50 us di/dt = 25 A/us to Ie = 0 tp 2 40 us 60 pulses/second 25C} Indicates JEDEC registered data 3-5