©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
KSP05/06
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
* Pulse T est: PW≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
VCBO
Collector Base Voltage : KSP05
: KSP06 60
80 V
V
VCEO Collector-Emitter Voltage : KSP05
: KSP06 60
80 V
V
VEBO Emitter-Base Voltage 4 V
ICCollector Current 500 mA
PCCollector Power Dissipation 625 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -55~150 °C
Symbol Parameter Test Condition Min. Max. Units
BVCEO Collect or-E mitter Break down Voltage
: KSP05
: KSP06
IC=1mA, IB=0 60
80
V
V
BVEBO E mitter-B ase Break down Voltage IE=100µA, IC=0 4 V
ICBO Collector Cut-off Current : KSP05
: KSP06 VCB=60V, IE=0
VCB=80V, IE=0 0.1
0.1 µA
µA
ICEO Collector Cut-off Current VCE=60V, IB=0 0.1 µA
hFE
DC Current Gain VCE=1V, IC=10mA
VCE=1V, IC=100mA 50
50
VCE (sat) Collector-Emitter Saturat ion Voltage IC=100mA, IB=10mA 0.25 V
VBE (on) Base-Emitter On Voltage VCE=1V, IC=100mA 1.2 V
fTCurrent Gain Bandwidth Product VCE=2V, IC=10mA
f=100MHz 100 MHz
KSP05/06
Amplifier Transistor
• Collector-Emitter Voltage: VCEO = KSP05: 60V
KSP06: 80V
• Collector Dissipation: PC (max)=625mW
• Complement to KSP55/56
1. Emitter 2. Base 3. Collector
TO-92
1
©2002 Fairchild Semiconductor Corporation
KSP05/06
Rev. A2, September 2002
Typical Characteristics
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 3. Base-Emitter On Voltage Figure 4. Current Gain Bandwidth Product
1 10 100 1000
10
100
1000 VCE = 1V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10
IC = 10 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECT OR CURRENT
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1
10
100
1000
VCE = 1V
IC [µA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
1 10 100 1000
10
100
1000
VCE = 2V
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Package Dimensions
KSP05/06
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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