Discrete POWER & Signal ee FAIRCHILD Technologies SEMICONDUCTOR m NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units Voeo Collector-Emitter Voltage 12 Vv Vcso Collector- Base Voltage 30 Vv VeBo Emitter-Base Voltage 3.0 Vv Io Collector Current - Continuous 50 mA Ty, Tstg Operating and Storage Junction Temperature Range -55 to +150 C NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Symbol Characteristic Max Units 2N3663 Pp Total Device Dissipation 350 mW Derate above 25C 2.8 mW/C Rese Thermal Resistance, Junction to Case 125 C/W Raa Thermal Resistance, Junction to Ambient 357 C/W C99ENZS 1997 Fairchild Semiconductor CorporationElectrical Characteristics TA = 25C unless otherwise noted NPN RF Transistor (continued) Symbol Parameter Test Conditions Min Max | Units OFF CHARACTERISTICS Vier)cEo Collector-Emitter Breakdown Voltage* | Ic = 1.0 mA, Ip =0 12 Vv Visrycso Collector-Base Breakdown Voltage lo = 100 HA, |; = 0 30 Vv Visr)eB0 Emitter-Base Breakdown Voltage le = 100 pA, Ip = 0 3.0 Vv loBo Collector-Cutoff Current Vop= 15 V,lE=0 0.5 HA lEBO Emitter-Cutoff Current Vep=2.0V,1-=0 05 HA ON CHARACTERISTICS* hee | DC Current Gain | Vee = 10 V, lo =8.0mA 20 SMALL SIGNAL CHARACTERISTICS fr Current Gain - Bandwidth Product Ilo = 5.0 mA, Voce = 10 V, 700 2100 MHz f= 100 MHz Cob Output Capacitance Vog = 10 V, le = 0, f = 1.0 MHz 0.8 17 pF rbCo Collector Base Time Constant Io = 8.0 MA, Voce = 10 V, 80 ps f = 79.8 MHz FUNCTIONAL TEST NF Noise Figure Io = 1.0mMA, Vee = 6.0 V, 65 dB f = 60 MHz, Rg= 400 2 Gpe Amplifier Power Gain Io = 6.0 MA, Voz = 12 V, 1.5 dB f = 200 MHz *Pulse Test: Pulse Width < 300 ps, Duty Cycle < 2.0% C99ENZS