BFS460L6
Jun-15-2004
1
NPN Silicon RF TWIN Transistor
• High fT of 22 GHz
• For low voltage / low current applications
• Ideal for VCO modules and low noise amplifiers
• Low noise figure: 1.1 dB at 1.8 GHz
• World's smallest SMD 6-pin leadless package
• Excellent ESD performance
• Built in 2 transistors (TR1, TR2: die as BFR460L3)
* Short-term description
123
4
5
6
T R 1 T R 2
1 2 3
456
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFS460L6 AB 1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
TA > 0 °C
TA ≤ 0 °C
VCEO
4.5
4.2
V
Collector-emitter voltage VCES 15
Collector-base voltage VCBO 15
Emitter-base voltage VEBO 1.5
Collector current IC50 mA
Base current IB5
Total power dissipation1)
TS ≤ 104°C
Ptot 200 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature Tst
g
-65 ... 150
1TS is measured on the collector lead at the soldering point to the pcb
BFS460L6
Jun-15-2004
2
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 230 K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 4.5 5.8 - V
Collector-emitter cutoff current
VCE = 15 V, VBE = 0
ICES - - 10 µA
Collector-base cutoff current
VCB = 5 V, IE = 0
ICBO - - 100 nA
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
IEBO - - 1 µA
DC current gain
IC = 20 mA, VCE = 3 V, pulse measured
hFE 90 120 160 -
1For calculation of RthJA please refer to Application Note Thermal Resistance
BFS460L6
Jun-15-2004
3
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 30 mA, VCE = 3 V, f = 1 GHz
fT16 22 - GHz
Collector-base capacitance
VCB = 3 V, f = 1 MHz, emitter grounded
Ccb - 0.33 0.5 pF
Collector emitter capacitance
VCE = 3 V, f = 1 MHz, base grounded
Cce - 0.17 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, collector grounded
Ceb - 0.57 -
Noise figure
IC = 5 mA, VCE = 3 V, ZS = ZSopt, f = 1.8 GHz
IC = 5 mA, VCE = 3 V, ZS = ZSopt, f = 3 GHz
F
-
-
1.1
1.4
-
-
dB
Power gain, maximum stable1)
IC = 20 mA, VCE = 3 V, ZS = ZSopt,
ZL = ZLopt, f = 1.8 GHz
IC = 20 mA, VCE = 3 V, ZS = ZSopt,
ZL = ZLopt , f = 3 GHz
Gms
-
-
14.5
10
-
-
dB
Transducer gain
IC = 20 mA, VCE = 3 V, ZS = ZL = 50Ω,
f = 1.8 GHz
IC = 20 mA, VCE = 3 V, ZS = ZL = 50Ω,
f = 3 GHz
|S21e|2
-
-
12.5
9
-
-
Third order intercept point at output2)
VCE = 3 V, IC = 20 mA, ZS = ZL = 50Ω,
f = 1,8 GHz
IP3- 28 - dBm
1dB Compression point at output
IC = 20 mA, VCE = 3 V, ZS = ZL = 50Ω ,
f = 1.8 GHz
P-1dB - 12 -
1Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
