Single-chip built-in FET type Switching Regulator Series High-efficiency Step-down Switching Regulators with Built-in Power MOSFET BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN No.09027EAT33 Description ROHM's high efficiency step-down switching regulators (BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN) are the power supply designed to produce a low voltage including 1 volts from 5/3.3 volts power supply line. Offers high efficiency with our original pulse skip control technology and synchronous rectifier. Employs a current mode control system to provide faster transient response to sudden change in load. Features 1) Offers fast transient response with current mode PWM control system. 2) Offers highly efficiency for all load range with synchronous rectifier (Nch/Pch FET) TM and SLLM (Simple Light Load Mode) 3) Incorporates soft-start function. 4) Incorporates thermal protection and ULVO functions. 5) Incorporates short-current protection circuit with time delay function. 6) Incorporates shutdown function 7) Employs small surface mount package MSOP8 (BD9106FVM,BD9107FVM,BD9109FVM), HSON8 (BD9120HFN), SON008V5060 (BD9110NV) Use Power supply for LSI including DSP, Micro computer and ASIC Line up Parameter BD9106FVM Input Voltage BD9107FVM BD9109FVM BD9110NV BD9120HFN 4.05.5V 4.05.5V 4.55.5V 4.55.5V 2.74.5V Output Voltage Adjustable (1.02.5V) Adjustable (1.01.8V) 3.302% Adjustable (1.02.5V) Adjustable (1.01.5V) Output Current 0.8A Max. 1.2A Max. 0.8A Max. 2.0A Max. 0.8A Max. UVLO threshold Voltage 3.4V Typ. 2.7V Typ. 3.8V Typ. 3.7V Typ. 2.5V Typ. -25+105 -25+85 SON008V5060 HSON8 Short-current protection with time delay function built-in Soft start function built-in Standby current 0A Typ. Operating Temperature Range -25+85 -25+85 Package -25+85 MSOP8 Operating Conditions (Ta=25) Parameter VCC voltage PVCC voltage EN voltage SW average output current BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. VCC *1 4.0 5.5 4.0 5.5 4.5 5.5 4.5 5.5 2.7 4.5 V PVCC *1 4.0 5.5 4.0 5.5 4.5 5.5 4.5 5.5 2.7 4.5 V EN 0 VCC 0 VCC 0 VCC 0 VCC 0 VCC V Isw *1 - 0.8 - 1.2 - 0.8 - 2.0 - 0.8 A Symbol Unit *1 Pd should not be exceeded. www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. 1/28 2009.05 - Rev.A BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Technical Note Absolute Maximum Rating (Ta=25) Parameter VCC voltage PVCC voltage EN voltage SW,ITH voltage Power dissipation 1 Power dissipation 2 Operating temperature range Storage temperature range Maximum junction temperature *2 *3 *4 *5 *6 *7 *8 Symbol VCC PVCC EN SW,ITH Pd1 Pd2 Topr Tstg Tjmax BD910FVM -0.3+7 *2 -0.3+7 *2 -0.3+7 -0.3+7 387.5*3 587.4*4 -25+85 -55+150 +150 Limits BD9110NV -0.3+7 *2 -0.3+7 *2 -0.3+7 -0.3+7 900*5 3900*6 -25+105 -55+150 +150 BD9120HFN -0.3+7 *2 -0.3+7 *2 -0.3+7 -0.3+7 1350*7 1750*8 -25+85 -55+150 +150 Unit V V V V mW mW Pd should not be exceeded. Derating in done 3.1mW/ for temperatures above Ta=25. Derating in done 4.7mW/ for temperatures above Ta=25, Mounted on 70mmx70mmx1.6mm Glass Epoxy PCB. Derating in done 7.2mW/ for temperatures above Ta=25, Mounted on 70mmx70mmx1.6mm Glass Epoxy PCB which has 1 layer (3%) of copper on the back side). Derating in done 31.2mW/ for temperatures above Ta=25, Mounted on a board according to JESD51-7. Derating in done 10.8mW/ for temperatures above Ta=25, Mounted on 70mmx70mmx1.6mm Glass Epoxy PCB which has 1 layer (7%) of copper on the back side). Derating in done 14mW/ for temperatures above Ta=25, Mounted on 70mmx70mmx1.6mm Glass Epoxy PCB which has 1 layer (65%) of copper on the back side). Electrical Characteristics BD9106FVM (Ta=25, VCC=5V, EN=VCC, R1=20k, R2=10k unless otherwise specified.) Parameter Symbol Min. Typ. Max. Unit Standby current ISTB 0 10 A Bias current ICC 250 400 A EN Low voltage VENL GND 0.8 V EN High voltage VENH 2.0 VCC V EN input current IEN 1 10 A Oscillation frequency FOSC 0.8 1 1.2 MHz Pch FET ON resistance *9 RONP 0.35 0.60 Nch FET ON resistance *9 RONN 0.25 0.50 ADJ Voltage VADJ 0.780 0.800 0.820 V *9 Output voltage VOUT 1.200 V ITH SInk current ITHSI 10 20 A ITH Source Current ITHSO 10 20 A UVLO threshold voltage VUVLOTh 3.2 3.4 3.6 V UVLO hysteresis voltage VUVLOHys 50 100 200 mV Soft start time TSS 1.5 3 6 ms Timer latch time TLATCH 0.5 1 2 ms Conditions EN=GND Standby mode Active mode VEN=5V PVCC=5V PVCC=5V ADJ=H ADJ=L VCC=HL *9 Design GuaranteeOutgoing inspection is not done on all products BD9107FVM (Ta=25, VCC=5V, EN=VCC, R1=20k, R2=10k unless otherwise specified.) Parameter Symbol Min. Typ. Max. Unit Standby current ISTB 0 10 A Bias current ICC 250 400 A EN Low voltage VENL GND 0.8 V EN High voltage VENH 2.0 VCC V EN input current IEN 1 10 A Oscillation frequency FOSC 0.8 1 1.2 MHz Pch FET ON resistance *9 RONP 0.35 0.60 Nch FET ON resistance *9 RONN 0.25 0.50 ADJ Voltage VADJ 0.780 0.800 0.820 V *9 Output voltage VOUT 1.200 V ITH SInk current ITHSI 10 20 A ITH Source Current ITHSO 10 20 A UVLO threshold voltage VUVLOTh 2.6 2.7 2.8 V UVLO hysteresis voltage VUVLOHys 150 300 600 mV Soft start time TSS 0.5 1 2 ms Timer latch time TLATCH 0.5 1 2 ms Conditions EN=GND Standby mode Active mode VEN=5V PVCC=5V PVCC=5V VOUT =H VOUT =L VCC=HL *9 Design GuaranteeOutgoing inspection is not done on all products www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. 2/28 2009.05 - Rev.A BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Electrical Characteristics BD9109FVM (Ta=25, VCC=PVCC=5V, EN= VCC unless otherwise specified.) Parameter Symbol Min. Typ. Max. Standby current ISTB 0 10 Bias current ICC 250 400 EN Low voltage VENL GND 0.8 EN High voltage VENH 2.0 VCC EN input current IEN 1 10 Oscillation frequency FOSC 0.8 1 1.2 Pch FET ON resistance *9 RONP 0.35 0.60 Nch FET ON resistance *9 RONN 0.25 0.50 Output voltage VOUT 3.234 3.300 3.366 ITH SInk current ITHSI 10 20 ITH Source Current ITHSO 10 20 UVLO threshold voltage VUVLO1 3.6 3.8 4.0 UVLO hysteresis voltage VUVLO2 3.65 3.9 4.2 Soft start time TSS 0.5 1 2 Timer latch time TLATCH 1 2 3 Output Short circuit VSCP 2 2.7 Threshold Voltage Technical Note Unit A A V V A MHz V A A V V ms ms V Conditions EN=GND Standby mode Active mode VEN=5V PVCC=5V PVCC=5V VOUT =H VOUT =L VCC=HL VCC=LH SCP/TSD operated VOUT =HL *9 Design GuaranteeOutgoing inspection is not done on all products BD9110NV (Ta=25, VCC=PVCC=5V, EN=VCC, R1=10k,R2=5k unless otherwise specified.) Parameter Symbol Min. Typ. Max. Unit Standby current ISTB 0 10 A Bias current ICC 250 350 A EN Low voltage VENL GND 0.8 V EN High voltage VENH 2.0 VCC V EN input current IEN 1 10 A Oscillation frequency FOSC 0.8 1 1.2 MHz Pch FET ON resistance *9 RONP 200 320 m Nch FET ON resistance *9 RONN 150 270 m ADJ Voltage VADJ 0.780 0.800 0.820 V *9 Output voltage VOUT 1.200 V ITH SInk current ITHSI 10 20 A ITH Source Current ITHSO 10 20 A UVLO threshold voltage VUVLOTh 3.5 3.7 3.9 V UVLO hysteresis voltage VUVLOHys 50 100 200 mV Soft start time TSS 2.5 5 10 ms Timer latch time TLATCH 0.5 1 2 ms Conditions EN=GND Standby mode Active mode VEN=5V PVCC=5V PVCC=5V VOUT =H VOUT =L VCC=HL *9 Design GuaranteeOutgoing inspection is not done on all products BD9120HFN (Ta=25, VCC=PVCC=3.3V, EN=VCC, R1=20k, R2=10k unless otherwise specified.) Parameter Symbol Min. Typ. Max. Unit Conditions Standby current ISTB 0 10 A EN=GND Bias current ICC 200 400 A EN Low voltage VENL GND 0.8 V Standby mode EN High voltage VENH 2.0 VCC V Active mode EN input current IEN 1 10 A VEN=3.3V Oscillation frequency FOSC 0.8 1 1.2 MHz Pch FET ON resistance *9 RONP 0.35 0.60 PVCC=3.3V Nch FET ON resistance *9 RONN 0.25 0.50 PVCC=3.3V ADJ Voltage VADJ 0.780 0.800 0.820 V *9 Output voltage VOUT 1.200 V ITH SInk current ITHSI 10 20 A VOUT =H ITH Source Current ITHSO 10 20 A VOUT =L UVLO threshold voltage VUVLO1 2.400 2.500 2.600 V VCC=HL UVLO hysteresis voltage VUVLO2 2.425 2.550 2.700 V VCC=LH Soft start time TSS 0.5 1 2 ms Timer latch time TLATCH 1 2 3 ms SCP/TSD operated Output Short circuit VOUTx0.5 VOUTx0.7 V VOUT =HL VSCP Threshold Voltage *9 Design GuaranteeOutgoing inspection is not done on all products www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. 3/28 2009.05 - Rev.A BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Technical Note Characteristics dataBD9106FVM 2.0 2.0 1.0 0.5 0.0 1.5 1.0 VCC=5V Ta=25 Io=0A 0.5 1 2 3 4 INPUT VOLTAGE:VCC[V] 0 5 VCC=5V Io=0A 4 1.79 1.78 0 1.15 40 30 10 VCC=5V Ta=25 TEMPERATURE:Ta[] Fig.4 Ta-Vout Fig.5 Efficiency 55 65 75 1 85 0.40 2.0 0.35 1.8 EN VOLTAGE:VEN[V] PMOS 0.20 NMOS 0.15 0.10 -25 -15 -5 5 15 25 35 45 55 65 75 85 TEMPERATURE:Ta[] Fig.7 Ta-Ronn, Ronp www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. 0.90 5 15 25 35 45 55 65 75 85 65 85 TEMPERATURE:Ta[] VCC=5V 1.4 1.2 1.0 0.8 0.6 0.0 0.00 0.95 350 0.2 VCC=5V 1.00 -25 -15 -5 VCC=5V 0.4 0.05 1.05 Fig.6 Ta-Fosc 1.6 0.25 1.10 1000 CIRCUIT CURRENT:I CC [A] 45 VCC=5V 0.80 10 100 OUTPUT CURRENT:IOUT[mA] 35 3 0.85 0 25 2 1.20 50 1.76 15 1 Fig.3 Iout-Vout 60 20 5 VCC=5V Ta=25 OUTPUT CURRENT:IOUT [A] 70 1.77 -5 0.5 5 80 1.80 -25 -15 ON [] 3 VOUT=1.8V 90 1.75 ON RESISTANCE:R 2 100 VOUT=1.8V 1.81 0.30 1 FREQUENCY:FOSC[MHz] 1.82 1.0 Fig.2 Ven-Vout EFFICIENCY:[%] OUTPUT VOLTAGE:VOUT[V] 1.83 1.5 EN VOLTAGE:VEN[V] Fig.1 Vcc-Vout 1.84 VOUT=1.8V 0.0 0.0 0 1.85 OUTPUT VOLTAGE:VOUT[V] OUTPUT VOLTAGE:VOUT[V] OUTPUT VOLTAGE:VOUT[V] Ta=25 Io=0A 1.5 2.0 VOUT=1.8V VOUT=1.8V 300 250 200 150 100 50 0 -25 -15 -5 5 15 25 35 45 55 65 75 TEMPERATURE:Ta[] Fig.8 Ta-Ven 4/28 85 -25 -15 -5 5 15 25 35 45 55 75 TEMPERATURE:Ta[] Fig.9 Ta-Icc 2009.05 - Rev.A BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Technical Note FREQUENCY:FOSC[MHz] 1.2 VOUT=1.8V VCC=PVCC =EN 1.1 SLLM control VOUT=1.8V SW 1 VOUT VOUT 0.9 VCC=5V Ta=25 Io=0A 0.8 4 4.5 5 INPUT VOLTAGE:VCC [V] 5.5 Fig.10 Vcc-Fosc PWM control VCC=5V Ta=25 Fig.11 Soft start waveform VOUT=1.8V Fig.12 SW waveform Io=10mA VOUT=1.8V VOUT=1.8V VOUT VOUT SW VOUT IOUT IOUT VCC=5V Ta=25 VCC=5V Ta=25 Fig.13 SW waveform Io=200mA www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. Fig. 14 Transient response Io=100600mA(10s) 5/28 VCC=5V Ta=25 Fig.15 Transient response Io=600100mA(10s) 2009.05 - Rev.A BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Technical Note Characteristics dataBD9107FVM 2.0 1.0 0.5 0.0 1.5 1.0 0.5 VCC=5V Ta=25 Io=0A 1 2 3 4 INPUT VOLTAGE:VCC[V] 5 0 Fig.16 Vcc-Vout 4 0 1.51 1.50 1.49 1.48 1.15 50 40 30 1.46 10 VCC=5V Ta=25 5 15 25 35 45 55 65 75 1 85 TEMPERATURE:Ta[] Fig.19 Ta-Vout 0.35 PMOS EN VOLTAGE:VEN[V] 0.25 NMOS 0.15 VCC=5V 0.05 5 15 25 35 45 55 65 1.4 1.2 1.0 0.8 0.6 0.2 0.0 0.00 -5 VCC=5V 0.4 Fig.22 -NMOS FET ON -25 -15 0.95 0.90 -25 -15 -5 75 TEMPERATURE:Ta[] Fig.22 Ta-RONN, RONP www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. 85 5 15 25 35 45 55 65 75 85 TEMPERATURE:Ta[] Fig.21 Ta-Fosc 350 1.6 0.10 1.00 10000 CIRCUIT CURRENT:ICC[A] 1.8 0.20 1.05 0.80 10 100 1000 OUTPUT CURRENT:IOUT[mA] 2.0 0.30 1.10 Fig.20 Efficiency 0.40 VCC=5V 0.85 0 -5 3 1.20 60 20 2 Fig.18 Iout-Vout 70 1.47 1 OUTPUT CURRENT:IOUT [A] FREQUENCY:FOSC[MHz] 1.52 -25 -15 0.5 5 80 EFFICIENCY:[%] OUTPUT VOLTAGE:VOUT[V] 2 3 EN VOLTAGE:VEN[V] VOUT=1.5V 90 1.45 ON RESISTANCE:RON[] 1 100 VOUT=1.5V VCC=5V Io=0A 1.53 1.0 Fig.17 Ven-Vout 1.55 1.54 1.5 0.0 0.0 0 VCC=5V Ta=25 VOUT=1.5V OUTPUT VOLTAGE:VOUT[V] 1.5 2.0 VOUT=1.5V VOUT=1.5V Ta=25 Io=0A OUTPUT VOLTAGE:VOUT[V] OUTPUT VOLTAGE:VOUT[V] 2.0 300 VCC=5V 250 200 150 100 50 0 -25 -15 -5 5 15 25 35 45 55 65 75 85 TEMPERATURE:Ta[] Fig.23 Ta-VEN 6/28 -25 -15 -5 5 15 25 35 45 55 65 75 85 TEMPERATURE:Ta[] Fig.24 Ta-ICC 2009.05 - Rev.A BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN FREQUENCY:FOSC[MHz] 1.2 Technical Note VOUT=1.5V VCC=PVCC =EN 1.1 SLLM control VOUT=1.5V SW 1 VOUT 0.9 VOUT VCC=5V Ta=25 Io=0A VCC=5V Ta=25 0.8 4 4.5 5 INPUT VOLTAGE:VCC [V] 5.5 Fig.25 Vcc-Fosc PWM control Fig.26 Soft start waveform Fig.27 SW waveform Io=10mA VOUT=1.5V VOUT=1.5V VOUT=1.5V VOUT VOUT SW VOUT IOUT IOUT VCC=5V Ta=25 VCC=5V Ta=25 Fig.28 SW waveform Io=500mA www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. Fig. 29 Transient response Io=100600mA(10s) 7/28 VCC=5V Ta=25 Fig.30 Transient response Io=600100mA(10s) 2009.05 - Rev.A BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Technical Note Characteristics dataBD9109FVM 4.0 4.0 4.0 3.0 2.0 1.0 0.0 3.0 2.0 1.0 VCC=5V Ta=25 Io=0A 0.0 0 1 2 3 4 INPUT VOLTAGE:VCC[V] 5 0 Fig.31 Vcc-Vout 3.20 3.15 1.15 50 40 30 3.05 10 3.00 VCC=5V Ta=25 25 35 45 55 65 75 85 10 100 OUTPUT CURRENT:IOUT[mA] NMOS 0.15 0.10 EN VOLTAGE:VEN[V] 0.20 1.4 1.2 1.0 0.8 0.6 0.05 0.2 0.00 0.0 5 15 25 35 45 55 65 75 85 TEMPERATURE:Ta[] Fig.37 Ta-Ronn, Ronp www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. 0.90 5 15 25 35 45 55 65 75 85 Fig.36 Ta-Fosc 350 0.4 -25 -15 -5 0.95 TEMPERATURE:Ta[] VCC=5V 1.6 PMOS 1.00 -25 -15 -5 CIRCUIT CURRENT:ICC[A] 1.8 0.25 1.05 1000 2.0 VCC=5V VCC=5V 1.10 Fig.35 Efficiency 0.40 3 0.80 1 Fig. 34 Ta-Vout 1 2 OUTPUT CURRENT:IOUT [A] 0.85 0 15 TEMPERATURE:Ta[] ON RESISTANCE:RON[] 0 1.20 60 20 5 VCC=5V Ta=25 Fig.33 Iout-Vout 70 3.10 -5 1.0 0.0 FREQUENCY:FOSC[MHz] 3.25 -25 -15 2.0 5 80 3.30 0.30 4 90 3.35 0.35 2 3 EN VOLTAGE:VEN[V] 100 VCC=5V Io=0A EFFICIENCY:[%] OUTPUT VOLTAGE:VOUT[V] 3.40 1 3.0 Fig.32 Ven-Vout 3.50 3.45 OUTPUT VOLTAGE:VOUT[V] OUTPUT VOLTAGE:VOUT[V] OUTPUT VOLTAGE:VOUT[V] Ta=25 Io=0A 300 VCC=5V 250 200 150 100 50 0 -25 -15 -5 5 15 25 35 45 55 65 75 85 TEMPERATURE:Ta[] Fig.38 Ta-Ven 8/28 -25 -15 -5 5 15 25 35 45 55 65 75 85 TEMPERATURE:Ta[] Fig.39 Ta-Icc 2009.05 - Rev.A BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Technical Note FREQUENCY:FOSC[MHz] 1.2 SLLM control VCC=PVCC =EN 1.1 SW 1 VOUT VOUT 0.9 VCC=5V Ta=25 Io=0A 0.8 4 4.5 5 INPUT VOLTAGE:VCC[V] VCC=5V Ta=25 5.5 Fig.40 Vcc-Fosc Fig.41 Soft start waveform Fig.42 SW waveform Io=10mA PWM control VOUT VOUT SW IOUT VOUT VCC=5V Ta=25 Fig.43 SW waveform Io=500mA www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. VCC=5V Ta=25 IOUT Fig. 44 Transient response Io=100600mA(10s) 9/28 VCC=5V Ta=25 Fig.45 Transient response Io=600100mA(10s) 2009.05 - Rev.A BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Technical Note Characteristics dataBD9110NV 2.0 2.0 1.5 1.0 0.5 0.0 VOUT=1.4V 1.5 1.0 0.5 1 2 3 4 INPUT VOLTAGE:VCC[V] 5 1 VCC=5V Io=0A 1.41 1.40 1.39 1.38 30 TEMPERATURE:Ta[] Fig. 49 Ta-Vout Fig.50 Efficiency 45 55 65 75 85 10 95 105 1.05 1.00 0.95 0.90 0.80 100 1000 OUTPUT CURRENT:IOUT[mA] 35 1.10 0.85 0 25 10000 -25 -15 EN VOLTAGE:VEN[V] 0.25 0.20 PMOS 0.15 NMOS 0.10 350 1.4 1.2 1.0 0.8 0.6 0.4 0.05 0.2 0.00 0.0 -25 -15 -5 5 15 25 35 45 55 65 75 85 95 105 TEMPERATURE:Ta[] Fig.52 Ta-Ronn, Ronp www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. 15 25 35 45 55 65 75 85 95 105 75 85 95 105 400 VCC=5V 1.6 0.30 5 Fig.51 Ta-Fosc CIRCUIT CURRENT:I CC [A] 1.8 -5 TEMPERATURE:Ta[] 2.0 VCC=5V 4 VCC=5V 1.15 40 10 15 1 2 3 OUTPUT CURRENT:IOUT [A] 1.20 50 1.36 5 0 Fig.48 Iout-Vout 60 20 0.40 ON [] 5 70 1.37 1.35 ON RESISTANCE:R 4 FREQUENCY:FOSC[MHz] 80 1.42 0.35 2 3 EN VOLTAGE:VEN[V] VOUT=1.4V VCC=5V Ta=25 90 EFFICIENCY:[%] OUTPUT VOLTAGE:VOUT[V] 100 VOUT=1.4V -5 0.5 Fig.47 Ven-Vout 1.45 -25 -15 1.0 0.0 0 Fig.46 Vcc-Vout 1.43 1.5 VCC=5V Ta=25 0.0 0 1.44 VOUT=1.4V VCC=5V Ta=25 Io=0A OUTPUT VOLTAGE:VOUT[V] VOUT=1.4V Ta=25 Io=0A OUTPUT VOLTAGE:VOUT[V] OUTPUT VOLTAGE:VOUT[V] 2.0 VCC=5V 300 250 200 150 100 50 0 -25 -15 -5 5 15 25 35 45 55 65 75 85 95 105 -25 -15 -5 5 15 25 35 45 55 65 TEMPERATURE:Ta[] TEMPERATURE:Ta[] Fig.53 Ta-Ven Fig.54 Ta-Icc 10/28 2009.05 - Rev.A BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Technical Note 1.2 FREQUENCY:FOSC[MHz] Ta=25 VOUT=1.4V VCC=PVCC =EN 1.1 SLLM control VOUT=1.4V SW 1 VOUT VOUT 0.9 0.8 4.5 5 INPUT VOLTAGE:VCC [V] VCC=5V Ta=25 5.5 Fig.55 Vcc-Fosc PWM control VCC=5V Ta=25 Io=0A Fig.56 Soft start waveform Fig.57 SW waveform Io=10mA VOUT=1.4V VOUT=1.4V VOUT=1.4V VOUT VOUT SW IOUT VOUT VCC=5V Ta=25 Fig.58 SW waveform Io=500mA www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. IOUT VCC=5V Ta=25 Fig. 59 Transient response Io=100600mA(10s) 11/28 VCC=5V Ta=25 Fig.60 Transient response Io=600100mA(10s) 2009.05 - Rev.A BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Technical Note Characteristics dataBD9120HFN 2.0 2.0 VOUT=1.5V Ta=25 Io=0A 1.0 0.5 0.0 1.5 1.0 0.5 VCC=3.3V Ta=25 Io=0A 1 2 3 4 INPUT VOLTAGE:VCC[V] 5 0 1 Fig.61 Vcc-Vout 1.15 1.50 1.49 1.48 FREQUENCY:FOSC[MHz] 1.51 70 60 50 40 30 1.47 20 1.46 10 VCC=3.3V Ta=25 5 15 25 35 45 55 65 75 10 100 OUTPUT CURRENT:IOUT[mA] Fig. 64 Ta-Vout Fig. 64 Ta-VOUT 1.8 0.20 NMOS 0.10 0.05 0.00 25 35 45 55 65 75 85 TEMPERATURE:Ta[] Fig.67 Ta-Ronn, Ronp www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. -5 5 15 25 35 45 55 65 75 85 TEMPERATURE:Ta[] 300 270 1.4 1.2 1.0 0.8 0.6 VCC=3.3V 240 210 180 150 120 90 60 30 0 0.0 15 -25 -15 VCC=3.3V 0.2 5 0.90 Fig.66 Ta-Fosc 0.4 -5 0.95 CIRCUIT CURRENT:I CC [A] EN VOLTAGE:VEN[V] PMOS -25 -15 1.00 1000 1.6 0.30 0.15 1.05 2.0 0.35 0.25 1.10 Fig.65 Efficiency VCC=3.3V VCC=3.3V 0.80 1 85 3 0.85 0 -5 1 2 OUTPUT CURRENT:IOUT [A] 1.20 TEMPERATURE:Ta[] ON [] 0 Fig.63 Iout-Vout 80 1.45 ON RESISTANCE:R 0.0 VOUT=1.5V 90 1.52 -25 -15 0.5 5 100 VOUT=1.5V VCC=3.3V Io=0A EFFICIENCY:[%] OUTPUT VOLTAGE:VOUT[V] 1.53 4 1.0 Fig.62 Ven-Vout 1.55 1.54 2 3 EN VOLTAGE:VEN[V] 1.5 VCC=3.3V Ta=25 0.0 0 0.40 OUTPUT VOLTAGE:VOUT[V] 1.5 VOUT=1.5V VOUT=1.5V OUTPUT VOLTAGE:VOUT[V] OUTPUT VOLTAGE:VOUT[V] 2.0 -25 -15 -5 5 15 25 35 45 55 TEMPERATURE:Ta[] Fig.68 Ta-Ven 12/28 65 75 85 -25 -15 -5 5 15 25 35 45 55 65 75 85 TEMPERATURE:Ta[] Fig.69 Ta-Icc 2009.05 - Rev.A BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN 1.2 FREQUENCY:FOSC[MHz] Ta=25 VOUT=1.5V VCC=PVCC =EN 1.1 Technical Note SLLM control VOUT=1.5V SW 1 VOUT 0.9 VOUT 0.8 2.7 3.6 VCC=3.3V Ta=25 Io=0A 4.5 VCC=3.3V Ta=25 INPUT VOLTAGE:VCC [V] Fig.70 Vcc-Fosc PWM control Fig.71 Soft start waveform VOUT=1.5V Fig.72 SW waveform Io=10mA VOUT=1.5V VOUT=1.5V VOUT SW VOUT IOUT VOUT VCC=3.3V Ta=25 Fig.73 SW waveform Io=200mA www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. IOUT VCC=3.3V Ta=25 Fig. 74 Transient response Io=100600mA(10s) 13/28 VCC=3.3V Ta=25 Fig.75 Transient response Io=600100mA(10s) 2009.05 - Rev.A BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Block Diagram, Application Circuit BD9106FVM, BD9107FVM Technical Note VCC EN 3 8 VREF 7 1 2 ADJ VCC ITH PVCC Current Comp. 8 R Q 7 Gm Amp. 3 4 EN SW GND PGND 6 VCC 5 OSC 10F 5 TOP View Fig.76 BD9106FVM,BD9107FVM TOP View 2 Output SW TSD ADJ 10F 6 4 1 PVCC 4.7H + Driver Logic UVLO Soft Start 5V Input Current Sense/ Protect S CLK SLOPE VCC PGND GND ITH Fig.77 BD9106FVM,BD9107FVM Block Diagram BD9109FVM VCC EN 3 8 VREF VCC 1 VOUT 2 ITH PVCC 7 3 EN SW 6 4 GND PGND 5 7 8 Current Comp. R Q Gm Amp. S SLOPE VCC CLK OSC UVLO Soft Start VOUT Fig.78 BD9109FVM TOP View www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. 2 PVCC 4.7H + 6 10F Output SW Driver Logic SCP 1 5V Input Current Sense/ Protect TSD TOP View VCC 10F 5 4 PGND GND ITH Fig.79. BD9109FVM Block Diagram 14/28 2009.05 - Rev.A BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Technical Note BD9110NV VCC EN ADJ 1 8 VCC 2 7 PVCC ITH 3 EN 8 Current Comp 6 SW GND 4 R Q + 5 PGND SLOPE Gm Amp. TOP View VCC 2 VREF S + CLK Driver Logic OSC + Current Sense/ Protect 5V Input 7 PVCC 2.2H 10F Output 6 SW 22F VCC UVLO Soft Start 5 TSD PGND 4 1 GND 3 ADJ ITH RITH R1 CITH R2 Fig.80 BD9110NV TOP View Fig.81 BD9110NV Block Diagram BD9120HFN VCC EN 3 8 VREF 1 ADJ VCC 8 2 ITH PVCC 7 3 EN SW 6 4 GND PGND 5 VCC PVCC 7 10F Current Comp + TOP View R S Gm Amp. SLOPE CLK OSC + VCC Q 3.3V Input Current Sense/ Protect + 4.7H 6 Driver Logic Output SW 10F UVLO Soft Start TSD SCP 5 PGND 4 GND 1 2 ADJ ITH RITH R1 R2 Fig.82 BD9120HFN TOP View www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. CITH Fig.83 BD9120HFN Block Diagram 15/28 2009.05 - Rev.A BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Pin number and function BD9106FVM, BD9107FVM, BD9109FVM Pin No. Pin name 1 ADJ/VOUT 2 ITH 3 EN 4 GND 5 PGND 6 SW 7 PVCC 8 VCC Technical Note PIN function Output voltage detect pin/ ADJ for BD910607FVM GmAmp output pin/Connected phase compensation capacitor Enable pin(Active High) Ground Nch FET source pin Pch/Nch FET drain output pin Pch FET source pin VCC power supply input pin BD9110NV Pin No. 1 2 3 4 5 6 7 8 Pin name ADJ VCC ITH GND PGND SW PVCC EN PIN function Output voltage adjust pin VCC power supply input pin GmAmp output pin/Connected phase compensation capacitor Ground Nch FET source pin Pch/Nch FET drain output pin Pch FET source pin Enable pin(Active High) BD9120HFN Pin No. 1 2 3 4 5 6 7 8 Pin name ADJ ITH EN GND PGND SW PVCC VCC PIN function Output voltage adjust pin GmAmp output pin/Connected phase compensation capacitor Enable pin(Active High) Ground Nch FET source pin Pch/Nch FET drain output pin Pch FET source pin VCC power supply input pin www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. 16/28 2009.05 - Rev.A BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Technical Note Information on advantages Advantage 1Offers fast transient response with current mode control system. Conventional product (VOUT of which is 3.3 volts) BD9109FVM (Load response IO=100mA600mA) VOUT VOUT 228mV 140mV IOUT IOUT Voltage drop due to sudden change in load was reduced by about 40%. Fig.84 Comparison of transient response Advantage 2 Offers high efficiency for all load range. For lighter load: TM Utilizes the current mode control mode called SLLM for lighter load, which reduces various dissipation such as switching dissipation (PSW), gate charge/discharge dissipation, ESR dissipation of output capacitor (PESR) and on-resistance dissipation (PRON) that may otherwise cause degradation in efficiency for lighter load. Achieves efficiency improvement for lighter load. Efficiency [%] 100 For heavier load: Utilizes the synchronous rectifying mode and the low on-resistance MOS FETs incorporated as power transistor. ON resistance of P-channel MOS FET: 0.20.35 (Typ.) ON resistance of N-channel MOS FET: 0.150.25 (Typ.) SLLMTM 50 PWM inprovement by SLLM system improvement by synchronous rectifier 0 0.001 0.01 0.1 Output current Io[A] 1 Fig.85 Efficiency Achieves efficiency improvement for heavier load. Offers high efficiency for all load range with the improvements mentioned above. Advantage 3Supplied in smaller package due to small-sized power MOS FET incorporated. (3 package like MOSP8, HSON8, SON008V5060) Allows reduction in size of application products Output capacitor Co required for current mode control: 10 F ceramic capacitor Inductance L required for the operating frequency of 1 MHz: 4.7 H inductor (BD9110NV:Co=22F, L=2.2H) Reduces a mounting area required. VCC 15mm Cin CIN DC/DC Convertor Controller RITH L RITH L VOUT 10mm CITH Co CO CITH Fig.86 Example application www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. 17/28 2009.05 - Rev.A BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Technical Note Operation BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN are a synchronous rectifying step-down switching regulator that achieves faster transient response by employing current mode PWM control system. It utilizes switching TM operation in PWM (Pulse Width Modulation) mode for heavier load, while it utilizes SLLM (Simple Light Load Mode) operation for lighter load to improve efficiency. Synchronous rectifier It does not require the power to be dissipated by a rectifier externally connected to a conventional DC/DC converter IC, and its P.N junction shoot-through protection circuit limits the shoot-through current during operation, by which the power dissipation of the set is reduced. Current mode PWM control Synthesizes a PWM control signal with a inductor current feedback loop added to the voltage feedback. PWM (Pulse Width Modulation) control The oscillation frequency for PWM is 1 MHz. SET signal form OSC turns ON a P-channel MOS FET (while a N-channel MOS FET is turned OFF), and an inductor current IL increases. The current comparator (Current Comp) receives two signals, a current feedback control signal (SENSE: Voltage converted from IL) and a voltage feedback control signal (FB), and issues a RESET signal if both input signals are identical to each other, and turns OFF the P-channel MOS FET (while a N-channel MOS FET is turned ON) for the rest of the fixed period. The PWM control repeat this operation. TM SLLM (Simple Light Load Mode) control When the control mode is shifted from PWM for heavier load to the one for lighter load or vise versa, the switching pulse is designed to turn OFF with the device held operated in normal PWM control loop, which allows linear operation without voltage drop or deterioration in transient response during the mode switching from light load to heavy load or vise versa. Although the PWM control loop continues to operate with a SET signal from OSC and a RESET signal from Current Comp, it is so designed that the RESET signal is held issued if shifted to the light load mode, with which the switching is tuned OFF and the switching pulses are thinned out under control. Activating the switching intermittently reduces the switching dissipation and improves the efficiency. SENSE Current Comp VOUT Level Shift FB RESET SET Gm Amp. ITH R Q IL S Driver Logic VOUT SW Load OSC Fig.87 Diagram of current mode PWM control PVCC Current Comp SENSE PVCC SENSE Current Comp FB FB SET GND SET GND RESET GND RESET GND SW GND SW IL GND IL(AVE) IL 0A VOUT VOUT VOUT(AVE) VOUT(AVE) Not switching Fig.88 PWM switching timing chart www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. Fig.89 SLLM switching timing chart 18/28 2009.05 - Rev.A BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Technical Note Description of operations Soft-start function EN terminal shifted to "High" activates a soft-starter to gradually establish the output voltage with the current limited during startup, by which it is possible to prevent an overshoot of output voltage and an inrush current. Shutdown function With EN terminal shifted to "Low", the device turns to Standby Mode, and all the function blocks including reference voltage circuit, internal oscillator and drivers are turned to OFF. Circuit current during standby is 0 F (Typ.). UVLO function Detects whether the input voltage sufficient to secure the output voltage of this IC is supplied. And the hysteresis width of 50300 mV (Typ.) is provided to prevent output chattering. Hysteresis 50300mV VCC EN VOUT Tss Tss Tss Soft start Standby mode Operating mode Standby mode Standby mode Operating mode UVLO UVLO Operating mode EN Standby mode UVLO *Soft Start time(typ.) Fig.90 Soft start, Shutdown, UVLO timing chart Tss BD9106FVM 3 BD9107FVM 1 BD9109FVM 1 BD9110NV 5 BD9120HFN 1 Unit msec Short-current protection circuit with time delay function Turns OFF the output to protect the IC from breakdown when the incorporated current limiter is activated continuously for the fixed time(TLATCH) or more. The output thus held tuned OFF may be recovered by restarting EN or by re-unlocking UVLO. EN Output OFF latch VOUT Limit IL 1msec Standby mode Standby mode Operating mode Timer latch *Timer Latch time (typ.) EN Operating mode EN Fig.91 Short-current protection circuit with time delay timing chart TLATCH BD9106FVM 1 BD9107FVM 1 BD9109FVM 2 BD9110NV 1 BD9120HFN 2 Unit msec In addition to current limit circuit, output short detect circuit is built in on BD9109FVM and BD9120HFN. If output voltage fall below 2V(typ, BD9109FVM) or Voutx0.5(typ,BD9120HFN), output voltage will hold turned OFF. www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. 19/28 2009.05 - Rev.A BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Technical Note Switching regulator efficiency Efficiency may be expressed by the equation shown below: VOUTxIOUT = VinxIin POUT x100[%]= Pin x100[%]= POUT POUT+PD x100[%] Efficiency may be improved by reducing the switching regulator power dissipation factors PD as follows: Dissipation factors: 2 1) ON resistance dissipation of inductor and FETPD(I R) 2) Gate charge/discharge dissipationPD(Gate) 3) Switching dissipationPD(SW) 4) ESR dissipation of capacitorPD(ESR) 5) Operating current dissipation of ICPD(IC) 2 2 1)PD(I R)=IOUT x(RCOIL+RON) (RCOIL[]DC resistance of inductor, RON[]ON resistance of FETIOUT[A]Output current.) 2)PD(Gate)=CgsxfxV (Cgs[F]Gate capacitance of FET,f[H]Switching frequency,V[V]Gate driving voltage of FET) 3)PD(SW)= Vin2xCRSSxIOUTxf IDRIVE (CRSS[F]Reverse transfer capacitance of FETIDRIVE[A]Peak current of gate.) 2 4)PD(ESR)=IRMS xESR (IRMS[A]Ripple current of capacitor,ESR[]Equivalent series resistance.) 5)PD(IC)=VinxICC (ICC[A]Circuit current.) Consideration on permissible dissipation and heat generation As this IC functions with high efficiency without significant heat generation in most applications, no special consideration is needed on permissible dissipation or heat generation. In case of extreme conditions, however, including lower input voltage, higher output voltage, heavier load, and/or higher temperature, the permissible dissipation and/or heat generation must be carefully considered. For dissipation, only conduction losses due to DC resistance of inductor and ON resistance of FET are considered. Because the conduction losses are considered to play the leading role among other dissipation mentioned above including gate charge/discharge dissipation and switching dissipation. 400 587.4mW 387.5mW 1.5 mounted on glass epoxy PCB j-a=133.0/W Using an IC alone j-a=195.3/W 1.15W Power dissipation:Pd [W] 800 600 1.5 mounted on glass epoxy PCB j-a=212.8/W Using an IC alone j-a=322.6/W Power dissipation:Pd [W] Power dissipation:Pd [mW] 1000 1.0 0.63W 0.5 for SON008V5060 ROHM standard 1layer board j-a=138.9/W Using an IC alone j-a=195.3/W 0.90W 1.0 0.64W 0.5 200 0 0 0 25 50 75 85 100 125 Ambient temperature:Ta [] Fig.92 Thermal derating curve (MSOP8) 150 0 0 25 50 75 85 100 125 150 Ambient temperature:Ta [] Fig.93 Thermal derating curve (HSON8) If VCC=5V, VOUT=3.3V, RCOIL=0.15, RONP=0.35, RONN=0.25 IOUT=0.8A, for example, D=VOUT/VCC=3.3/5=0.66 RON=0.66x0.35+(1-0.66)x0.25 =0.231+0.085 =0.316[] P=0.82x(0.15+0.316) 298[mV] 0 25 50 75 100105 125 150 Ambient temperature:Ta [] Fig.94 Thermal derating curve (SON008V5060) P=IOUT2x(RCOIL+RON) RON=DxRONP+(1-D)xRONN DON duty (=VOUT/VCC) RCOILDC resistance of coil RONPON resistance of P-channel MOS FET RONNON resistance of N-channel MOS FET IOUTOutput current As RONP is greater than RONN in this IC, the dissipation increases as the ON duty becomes greater. With the consideration on the dissipation as above, thermal design must be carried out with sufficient margin allowed. www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. 20/28 2009.05 - Rev.A BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Technical Note Selection of components externally connected 1. Selection of inductor (L) IL IL VCC The inductance significantly depends on output ripple current. As seen in the equation (1), the ripple current decreases as the inductor and/or switching frequency increases. IL= IL VOUT (VCC-VOUT)xVOUT LxVCCxf [A](1) Appropriate ripple current at output should be 30% more or less of the maximum output current. IL=0.3xIOUTmax. [A](2) L L= Co (VCC-VOUT)xVOUT ILxVCCxf [H](3) (IL: Output ripple current, and f: Switching frequency) Fig.95 Output ripple current * Current exceeding the current rating of the inductor results in magnetic saturation of the inductor, which decreases efficiency. The inductor must be selected allowing sufficient margin with which the peak current may not exceed its current rating. If VCC=5V, VOUT=3.3V, f=1MHz, IL=0.3x0.8A=0.24A, for example,(BD9109FVM) (5-3.3)x3.3 L= =4.675 4.7[H] 0.24x5x1M * Select the inductor of low resistance component (such as DCR and ACR) to minimize dissipation in the inductor for better efficiency. 2. Selection of output capacitor (CO) VCC Output capacitor should be selected with the consideration on the stability region and the equivalent series resistance required to smooth ripple voltage. Output ripple voltage is determined by the equation (4) VOUT L ESR Co VOUT=ILxESR [V](4) (IL: Output ripple current, ESR: Equivalent series resistance of output capacitor) *Rating of the capacitor should be determined allowing sufficient margin against output voltage. Less ESR allows reduction in output ripple voltage. Fig.96 Output capacitor As the output rise time must be designed to fall within the soft-start time, the capacitance of output capacitor should be determined with consideration on the requirements of equation (5): TSSx(Ilimit-IOUT) Tss: Soft-start time Co (5) Ilimit: Over current detection level, 2A(Typ) VOUT In case of BD9109FVM, for instance, and if VOUT=3.3V, IOUT=0.8A, and TSS=1ms, 1mx(2-0.8) Co 364 [F] 3.3 Inappropriate capacitance may cause problem in startup. A 10 F to 100 F ceramic capacitor is recommended. 3. Selection of input capacitor (Cin) VCC Cin VOUT L Co Input capacitor to select must be a low ESR capacitor of the capacitance sufficient to cope with high ripple current to prevent high transient voltage. The ripple current IRMS is given by the equation (6): VOUT(VCC-VOUT) IRMS=IOUTx [A](6) VCC < Worst case > IRMS(max.) IOUT When VCC is twice the Vout, IRMS= 2 If VCC=5V, VOUT=3.3V, and IOUTmax.=0.8A, (BD9109FVM) 3.3(5-3.3) IRMS=0.8x =0.38[ARMS] 5 A low ESR 10F/10V ceramic capacitor is recommended to reduce ESR dissipation of input capacitor for better efficiency. Fig.97 Input capacitor www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. 21/28 2009.05 - Rev.A BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Technical Note 4. Determination of RITH, CITH that works as a phase compensator As the Current Mode Control is designed to limit a inductor current, a pole (phase lag) appears in the low frequency area due to a CR filter consisting of a output capacitor and a load resistance, while a zero (phase lead) appears in the high frequency area due to the output capacitor and its ESR. So, the phases are easily compensated by adding a zero to the power amplifier output with C and R as described below to cancel a pole at the power amplifier. fp(Min.) 1 2xROxCO 1 fz(ESR)= 2xESRxCO A Gain [dB] 0 fz(ESR) IOUTMin. Phase [deg] fp= fp(Max.) IOUTMax. Pole at power amplifier When the output current decreases, the load resistance Ro increases and the pole frequency lowers. 0 -90 fp(Min.)= 1 2xROMax.xCO [Hz]with lighter load fp(Max.)= 1 2xROMin.xCO [Hz]with heavier load Fig.98 Open loop gain characteristics A fz(Amp.) Zero at power amplifier Increasing capacitance of the output capacitor lowers the pole frequency while the zero frequency does not change. (This is because when the capacitance is doubled, the capacitor ESR reduces to half.) Gain [dB] 0 Phase [deg] 0 fz(Amp.)= -90 1 2xRITH.xCITH Fig.99 Error amp phase compensation characteristics Cin VCC EN VOUT L VCC,PVCC SW ESR VOUT ITH VOUT RO CO GND,PGND RITH CITH Fig.100 Typical application Stable feedback loop may be achieved by canceling the pole fp (Min.) produced by the output capacitor and the load resistance with CR zero correction by the error amplifier. fz(Amp.)= fp(Min.) 1 2xRITHxCITH = 1 2xROMax.xCO 5. Determination of output voltage The output voltage VOUT is determined by the equation (7): VOUT=(R2/R1+1)xVADJ(7) VADJ: Voltage at ADJ terminal (0.8V Typ.) With R1 and R2 adjusted, the output voltage may be determined as required. Adjustable output voltage range 1.0V1.5V/ BD9107FVM, BD9120HFN 1.0V2.5V/BD106FVM, BD9110NV Use 1 k100 k resistor for R1. If a resistor of the resistance higher than 100 k is used, check the assembled set carefully for ripple voltage etc. L 6 Output SW Co R2 1 ADJ R1 Fig.101 Determination of output voltage www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. 22/28 2009.05 - Rev.A BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN BD9106FVM, BD9107FVM, BD9109FVM, BD9120HFN 1 VOUT/ADJ 2 ITH Cautions on PC Board layout VCC 8 PVCC 7 VCC RITH CIN EN 3 EN 4 GND Technical Note SW 6 PGND 5 L VOUT CITH CO GND Fig.102 Layout diagram BD9110NV Cautions on PC Board layout VCC R2 1 2 R1 3 RITH CITH 4 ADJ EN VCC PVCC ITH SW GND PGND 8 EN 7 L 6 5 VOUT CIN Co GND Fig.103 Layout diagram For the sections drawn with heavy line, use thick conductor pattern as short as possible. Lay out the input ceramic capacitor CIN closer to the pins PVCC and PGND, and the output capacitor Co closer to the pin PGND. Lay out CITH and RITH between the pins ITH and GND as neat as possible with least necessary wiring. The package of HSON8 (BD9120HFN) and SON008V5050 (BD9110NV) has thermal FIN on the reverse of the package. The package thermal performance may be enhanced by bonding the FIN to GND plane which take a large area of PCB. Table1. [BD9106FVM] Symbol Part L Value CMD6D11B TDK VLF5014AT-4R7M1R1 10F Kyocera CM316X5R106K10A 10F Kyocera CM316X5R106K10A 750pF murata GRM18series 4.7H CIN Ceramic capacitor CO Ceramic capacitor CITH Ceramic capacitor Resistance www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. Series Sumida Coil RITH Manufacturer VOUT=1.0V 18k ROHM MCR10 1802 VOUT=1.2V 22k ROHM MCR10 2202 VOUT=1.5V 22k ROHM MCR10 2202 VOUT=1.8V 27k ROHM MCR10 2702 VOUT=2.5V 36k ROHM MCR10 3602 23/28 2009.05 - Rev.A BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Table2. [BD9107FVM] Symbol Part L Value Technical Note Manufacturer Series Sumida CMD6D11B Coil 4.7H TDK VLF5014AT-4R7M1R1 CIN Ceramic capacitor 10F Kyocera CM316X5R106K10A CO Ceramic capacitor 10F Kyocera CM316X5R106K10A CITH Ceramic capacitor RITH Resistance Table3. [BD9109VM] Symbol Part L murata GRM18series VOUT=1.0V 1000pF 4.3k ROHM MCR10 4301 VOUT=1.2V 6.8k ROHM MCR10 6801 VOUT=1.5V 9.1k ROHM MCR10 9101 VOUT=1.8V 12k ROHM MCR10 1202 Manufacturer Series Sumida CMD6D11B Value Coil 4.7H TDK VLF5014AT-4R7M1R1 Ceramic capacitor 10F Kyocera CM316X5R106K10A CO Ceramic capacitor 10F Kyocera CM316X5R106K10A CITH Ceramic capacitor 330pF murata GRM18series RITH Resistance 30k ROHM MCR10 3002 Value Manufacturer Series TDK LTF5022T-2R2N3R2 CIN Table4. [BD9110NV] Symbol Part L Coil 2.2H CIN Ceramic capacitor 10F Kyocera CM316X5R106K10A CO Ceramic capacitor 22F Kyocera CM316B226K06A CITH Ceramic capacitor 1000pF murata GRM18series ROHM MCR10 1202 Manufacturer Series Sumida CMD6D11B VOUT=1.0V VOUT=1.2V RITH Resistance VOUT=1.5V 12k VOUT=1.8V VOUT=2.5V Table5. [BD9120HFN] Symbol Part Value L Coil 4.7H TDK VLF5014AT-4R7M1R1 CIN Ceramic capacitor 10F Kyocera CM316X5R106K10A CO Ceramic capacitor 10F Kyocera CM316X5R106K10A CITH Ceramic capacitor RITH Resistance murata GRM18series VOUT=1.0V 680pF 8.2k ROHM MCR10 8201 VOUT=1.2V 8.2k ROHM MCR10 8201 VOUT=1.5V 4.7k ROHM MCR10 4701 *The parts list presented above is an example of recommended parts. Although the parts are sound, actual circuit characteristics should be checked on your application carefully before use. Be sure to allow sufficient margins to accommodate variations between external devices and this IC when employing the depicted circuit with other circuit constants modified. Both static and transient characteristics should be considered in establishing these margins. When switching noise is substantial and may impact the system, a low pass filter should be inserted between the VCC and PVCC pins, and a schottky barrier diode established between the SW and PGND pins. www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. 24/28 2009.05 - Rev.A BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Technical Note I/O equivalence circuit BD9106FVM, BD9107FVM, BD9109FVM EN pin PVCC SW pin PVCC PVCC VCC 10k SW EN VOUT pin (BD9109FVM) ADJ pin (BD9106FVM, BD9107FVM) VCC VCC 10k 10k VOUT ADJ ITH pin VCC VCC ITH BD9110NV, BD9120HFN EN pin PVCC SW pin PVCC PVCC 10k EN SW ITH pin (BD9120HFN) ITH pin (BD9110NV) VCC VCC ITH ITH ADJ pin 10k ADJ Fig.104 I/O equivalence circuit www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. 25/28 2009.05 - Rev.A BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Technical Note Notes for use 1. Absolute Maximum Ratings While utmost care is taken to quality control of this product, any application that may exceed some of the absolute maximum ratings including the voltage applied and the operating temperature range may result in breakage. If broken, short-mode or open-mode may not be identified. So if it is expected to encounter with special mode that may exceed the absolute maximum ratings, it is requested to take necessary safety measures physically including insertion of fuses. 2. Electrical potential at GND GND must be designed to have the lowest electrical potential In any operating conditions. 3. Short-circuiting between terminals, and mismounting When mounting to pc board, care must be taken to avoid mistake in its orientation and alignment. Failure to do so may result in IC breakdown. Short-circuiting due to foreign matters entered between output terminals, or between output and power supply or GND may also cause breakdown. 4.Operation in Strong electromagnetic field} Be noted that using the IC in the strong electromagnetic radiation can cause operation failures. 5. Thermal shutdown protection circuit Thermal shutdown protection circuit is the circuit designed to isolate the IC from thermal runaway, and not intended to protect and guarantee the IC. So, the IC the thermal shutdown protection circuit of which is once activated should not be used thereafter for any operation originally intended. 6. Inspection with the IC set to a pc board If a capacitor must be connected to the pin of lower impedance during inspection with the IC set to a pc board, the capacitor must be discharged after each process to avoid stress to the IC. For electrostatic protection, provide proper grounding to assembling processes with special care taken in handling and storage. When connecting to jigs in the inspection process, be sure to turn OFF the power supply before it is connected and removed. 7. Input to IC terminals + This is a monolithic IC with P isolation between P-substrate and each element as illustrated below. This P-layer and the N-layer of each element form a P-N junction, and various parasitic element are formed. If a resistor is joined to a transistor terminal as shown in Fig 59: P-N junction works as a parasitic diode if the following relationship is satisfied; GND>Terminal A (at resistor side), or GND>Terminal B (at transistor side); and if GND>Terminal B (at NPN transistor side), a parasitic NPN transistor is activated by N-layer of other element adjacent to the above-mentioned parasitic diode. The structure of the IC inevitably forms parasitic elements, the activation of which may cause interference among circuits, and/or malfunctions contributing to breakdown. It is therefore requested to take care not to use the device in such manner that the voltage lower than GND (at P-substrate) may be applied to the input terminal, which may result in (Pin A) activation of parasitic elements. Resistance (Pin A) Transistor (NPN) B (Pin B) Parasitic diode E C GND GND N P+ P+ P P P+ N P+ N N P substrate (Pin B) N N Parasitic diode GND C N P substrate Parasitic diode or transistor GND B E GND Parasitic diode or transistor Fig.105 Simplified structure of monorisic IC 8. Ground wiring pattern If small-signal GND and large-current GND are provided, It will be recommended to separate the large-current GND pattern from the small-signal GND pattern and establish a single ground at the reference point of the set PCB so that resistance to the wiring pattern and voltage fluctuations due to a large current will cause no fluctuations in voltages of the small-signal GND. Pay attention not to cause fluctuations in the GND wiring pattern of external parts as well. www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. 26/28 2009.05 - Rev.A BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Technical Note Ordering part number B D 9 Part No. BD 1 1 0 N Part No. 9110 9120 9106 ,9107,9109 V - E 2 Packaging and forming specification Package NV : SON008V5060 HFN:MSOP8 FVM:HSON8 E2: Embossed tape and reel (SON008V5060,) TR: Embossed tape and reel (MSOP8, HSON8) MSOP8 2.80.1 4.00.2 8 7 6 5 0.60.2 +6 4 -4 0.290.15 2.90.1 (MAX 3.25 include BURR) Tape Embossed carrier tape Quantity 3000pcs Direction of feed TR The direction is the 1pin of product is at the upper right when you hold ( reel on the left hand and you pull out the tape on the right hand ) 1 2 3 4 1PIN MARK 1pin +0.05 0.145 -0.03 0.475 +0.05 0.22 -0.04 0.080.05 0.750.05 0.9MAX S 0.08 S Direction of feed 0.65 Reel (Unit : mm) Order quantity needs to be multiple of the minimum quantity. HSON8 (0.05) (0.3) (0.2) 1234 5678 (0.45) (0.2) (1.8) 8 765 2.8 0.1 3.0 0.2 0.475 (2.2) (0.15) 2.90.1 (MAX 3.1 include BURR) 4321 Tape Embossed carrier tape Quantity 3000pcs Direction of feed +0.1 0.13 -0.05 TR The direction is the 1pin of product is at the upper right when you hold ( reel on the left hand and you pull out the tape on the right hand 1pin 1PIN MARK S +0.03 0.02 -0.02 0.6MAX ) 0.1 S 0.65 0.320.1 0.08 Direction of feed M (Unit : mm) www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. Reel 27/28 Order quantity needs to be multiple of the minimum quantity. 2009.05 - Rev.A BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN Technical Note SON008V5060 6.0 0.15 5.00.15 4.20.1 1.27 2 3 4 0.59 8 7 5 2000pcs Direction of feed S E2 The direction is the 1pin of product is at the upper left when you hold ( reel on the left hand and you pull out the tape on the right hand ) 3.6 0.1 1 0.8 0.1 C0.25 Embossed carrier tape Quantity (0.22) 0.08 S +0.03 0.02 -0.02 1.0MAX 1PIN MARK Tape 6 +0.05 0.4 -0.04 1pin Reel (Unit : mm) www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. 28/28 Direction of feed Order quantity needs to be multiple of the minimum quantity. 2009.05 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. R0039A