BFR380L3 Linear Low Noise Silicon Bipolar RF Transistor * High current capability and low noise figure for wide dynamic range * Collector design supports supply voltage up to 5V * Ideal for low phase noise oscillators up to 3.5 GHz * Low noise figure 1.1 dB at 1.8 GHz * Pb-free (RoHS compliant) and halogen-free thin small leadless package * Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR380L3 Marking FC Pin Configuration 1=B 2=E 3=C Package TSLP-3-1 Maximum Ratings at TA = 25 C, unless otherwise specified Parameter Symbol Value Unit Collector-emitter voltage VCEO 6 Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 2 Collector current IC 80 Base current IB 14 Total power dissipation1) Ptot 380 mW Junction temperature TJ 150 C Storage temperature TStg V mA TS 96C -55 ... 150 Thermal Resistance Parameter Symbol Junction - soldering point2) RthJS 1T S is 2For Value Unit 140 K/W measured on the collector lead at the soldering point to the pcb the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2013-08-29 BFR380L3 Electrical Characteristics at TA = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 6 9 - DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 1 mA, IB = 0 Collector-emitter cutoff current nA ICES VCE = 5 V, VBE = 0 - 1 30 VCE = 15 V, VBE = 0 - - 1000 ICBO - - 30 IEBO - 10 500 hFE 90 120 160 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain - IC = 40 mA, VCE = 3 V, pulse measured 2 2013-08-29 BFR380L3 Electrical Characteristics at TA = 25 C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. 11 14 - Ccb - 0.45 0.8 Cce - 0.18 - Ceb - 1 - 0.5 1.1 2.1 11.5 14 16.5 7.5 10 12.5 AC Characteristics (verified by random sampling) Transition frequency fT GHz IC = 40 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance pF VCB = 5 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 5 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure NFmin dB IC = 8 mA, VCE = 3 V, ZS = ZSopt , f = 1.8 GHz Power gain, maximum available1) Gma IC = 40 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz f = 3 GHz |S21e|2 Transducer gain dB IC = 40 mA, VCE = 3 V, ZS = ZL = 50 , f = 1.8 GHz 9.5 11.5 13.5 f = 3 GHz 5.5 7.5 9.5 - 29.5 - - 16 - - 19.5 - Third order intercept point at output2) IP3 dBm VCE = 3 V, IC = 40 mA, f = 1.8 GHz, ZS = ZL = 50 1dB compression point at output P-1dB IC = 40 mA, VCE = 3V, f = 1.8 GHz ZS = ZL = 50 ZS = ZSopt, ZL = ZLopt 1G 1/2 ma = |S21e / S12e| (k-(k-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 3 2013-08-29 BFR380L3 Total power dissipation P tot = (TS) 440 mW 360 P tot 320 280 240 200 160 120 80 40 0 0 15 30 45 60 75 90 105 120 C 150 TS 4 2013-08-29 Package TSLP-3-1 5 BFR380L3 2013-08-29 BFR380L3 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2013-08-29 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Infineon: BFR380L3E6327XTMA1