Vishay Siliconix
2N6660JAN/JANTX/JANTXV
Document Number: 70223
S-70037-Rev. C, 15-Jan-07
www.vishay.com
1
JAN Qualified N-Channel 60-V (D-S) MOSFET
FEATURES
• Military Qualified
• Low On-Resistence: 1.3 Ω
• Low Threshold: 1.7 V
• Low Input Capacitance: 35 pF
• Fast Switching Speed: 8 ns
• Low Input and Output Leakage
BENEFITS
• Guaranteed Reliability
• Low Offset Voltage
• Low-Voltage Operation
• Easily Driven Without Buffer
• High-Speed Circuits
• Low Error Voltage
APPLICATIONS
• Military Applications
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
• Battery Operated Systems
• Solid-State Relays
PRODUCT SUMMARY
V(BR)DSS Min (V) rDS(on) Max (Ω)V
GS(th) (V) ID (A)
60 3 at VGS = 10 V 0.8 to 2 0.99
1
2 3
TO-205AD
(TO-39)
Top View
DG
S
Notes:
a. Pulse width limited by maximum junction temperature.
b. Not required by military spec.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID
0.99
A
TC = 100 °C 0.62
Pulsed Drain CurrentaIDM 3
Power Dissipation
TC = 25 °C
PD
6.25
W
TA = 25 °C 0.725
Thermal Resistance, Junction-to-Ambientb RthJA 170 °C/W
Thermal Resistance, Junction-to-Case RthJC 20
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
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Document Number: 70223
S-70037-Rev. C, 15-Jan-07
Vishay Siliconix
2N6660JAN/JANTX/JANTXV
Notes:
a. TA = 25 °C unless otherwise noted.
b. FOR DESIGN AID ONLY, not subject to production testing.
c. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %.
d. Switching time is essentially independent of operating temperature.
e. For typical characteristics curves see the 2N6659/2N6660, VQ1004J/P data sheet.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?70223.
SPECIFICATIONSa TA = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions
Limits
Unit Min TypbMax
Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 10 µA 60 75
V
Gate Threshold Voltage VGS(th)
VDS = VGS, ID = 1 mA 0.8 1.7 2
TC = - 55 °C 2.5
TC = 125 °C 0.3
Gate-Body Leakage IGSS
VDS = 0 V, VGS = ± 20 V ± 100 nA
TC = 125 °C ± 500
Zero Gate Voltage Drain Current IDSS
VDS = 48 V, VGS = 0 V 1µA
TC = 125 °C 100
On-State Drain Current ID(on) V
DS = 10 V, VGS = 10 V 2A
Drain-Source On-ResistancecrDS(on)
VGS = 5 V, ID = 0.3 A 25
Ω
VGS = 10 V, ID = 1 A 1.3 3
TC = 125 °C 2.4 5.6
Forward Transconductancecgfs VDS = 7.5 V, ID = 0.525 A 170 350 mS
Diode Forward Voltage VSD IS = 0.99 A, VGS = 0 V 0.7 0.8 1.6 V
Dynamic
Input Capacitance Ciss
VDS = 25 V, VGS = 0 V, f = 1 MHz
35 50
pF
Output Capacitance Coss 25 40
Reverse Transfer Capacitance Crss 710
Drain-Source Capacitance Cds 30
Switchingd
Tur n - O n T i m e tON VDD = 25 V, RL = 23 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 25 Ω
810
ns
Turn-Off Time tOFF 8.5 10
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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