MRF545
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other
applications requiring high breakdown characteristics.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage 70
Vdc
VCBO Collector-Base Voltage 100 Vdc
VEBO Emitter-Base Voltage 3.0 Vdc
IC Collector Current 400 mA
Thermal Data
PD Total Device Dissipation @ TA = 25ºC
Derate above 25ºC 3.5
20 Watts
mW/ ºC
Tstg Storage Temperature Range
-65 to +200
ºC
1. Emitter
2. Base
3. Collector
TO-39
Features
• Silicon PNP, high Frequency, high breakdown Transistor
• Maximum Unilateral Gain = 14 dB (typ) @ f = 200 MHz
• High Collector Base Breakdown Voltage - BVCBO = 100 V (min)
• High FT - 1400 MHz
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MRF545
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off) Value
Symbol Test Conditions Min. Typ. Max. Unit
BVCEO Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
70
-
-
Vdc
BVCBO Collector-Base Breakdown Voltage
(IC= 100 µAdc, IE=0)
100
-
-
Vdc
BVEBO Emitter-Base Breakdown Voltage
(IE = 100 µAdc, IC = 0)
3.0
-
- Vdc
ICBO Collector Cutoff Current
(VCE = 80 Vdc, IE = 0 Vdc)
-
-
20
µA
ICES Collector Cutoff Current
(VCE = 80 Vdc, IE = 0 Vdc)
-
1.0
100
µA
(on)
HFE DC Current Gain
(IC = 50 mAdc, VCE = 6.0 Vdc)
15
-
-
DYNAMIC Value
Symbol Test Conditions Min. Typ. Max. Unit
COB Output Capacitance
(VCB = 10Vdc, IE=0, f=1 MHz)
-
2.5
-
pF
CIB Input Capacitance
(VEB = 3Vdc, IE=0, f=1 MHz)
-
5.4
-
pF
CCB Junction Capacitance
(VCB = 10Vdc, IE=0, f=1 MHz)
-
2.8
3.2
pF
fT Current-Gain - Bandwidth Product
(IC = 50 mAdc, VCE = 25 Vdc, f = 250 MHz)
1000
1400
-
MHz
MRF545
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
FUNCTIONAL Value
Symbol Test Conditions Min. Typ. Max. Unit
GU max Maximum Unilateral Gain IC = 50 mAdc, VCE = 25Vdc,
f = 200 MHz
-
14
-
dB
MAG Maximum Available Gain IC = 50 mAdc, VCE = 25Vdc,
f = 200 MHz
-
14.5
-
dB
|S21|2 Insertion Gain IC = 50 mAdc, VCE = 25Vdc,
f = 200 MHz
11.5
12.5
-
dB
Table 1. Common Emitter S-Parameters, @ VCE = 25 V, IC = 50 mA
f
S11
S21
S12
S22
(MHz)
|S11| ∠ φ |S21| ∠ φ |S12| ∠ φ |S22| ∠ φ
100 0.139 -105 7.43 101 0.031 83 0.573 -19
200 0.162 -168 4.35 80 0.066 82 0.508 -23
300 0.522 130 1.7 75 0.113 85 0.493 -29
400 0.260 129 2.23 63 0.154 85 0.487 -43
500 0.275 133 1.74 54 0.188 71 0.445 -53
600 0.262 123 1.49 46 0.226 74 0.495 -69
700
0.333 118 0.951 45 0.925 75 0.456 -71
800 0.327 122 1.3 35 0.379 66 0.424 -85
900
0.517 97 1.21 30 0.402 61 0.393 -109
1000 0.463 115 1.07 27 0.437 63 0.375 -115
MRF545
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
