2N3810
2N3810A
SILICON
DUAL PNP TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3810 and 2N3810A
are dual silicon PNP transistors manufactured by the
epitaxial planar process utilizing two individual chips
mounted in a hermetically sealed metal case designed
for differential amplifier applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 50 mA
Power Dissipation (One Die) PD 500 mW
Power Dissipation (Both Dice) PD 600 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=50V 10 nA
IEBO V
EB=4.0V 20 nA
BVCBO I
C=10µA 60 V
BVCEO I
C=10mA 60 V
BVEBO I
E=10µA 5.0 V
VCE(SAT) I
C=100A, IB=10A 0.20 V
VCE(SAT) I
C=1.0mA, IB=100A 0.25 V
VBE(SAT) I
C=100A, IB=10A 0.70 V
VBE(SAT) I
C=1.0mA, IB=100A 0.80 V
VBE(ON) V
CE=5.0V, IC=100µA 0.70 V
hFE V
CE=5.0V, IC=10µA 100
hFE V
CE=5.0V, IC=100µA 150 450
hFE V
CE=5.0V, IC=500µA 150 450
hFE V
CE=5.0V, IC=1.0mA 150 450
hFE V
CE=5.0V, IC=10mA 125
fT V
CE=5.0V, IC=500µA, f=30MHz 30 MHz
fT V
CE=5.0V, IC=1.0mA, f=100MHz 100 500 MHz
Cob V
CB=5.0V, IE=0, f=100kHz 4.0 pF
Cib V
BE=0.5V, IC=0, f=100kHz 8.0 pF
hie V
CE=10V, IC=1.0mA, f=1.0kHz 3.0 30
hre V
CE=10V, IC=1.0mA, f=1.0kHz 25 x10-4
hfe V
CE=10V, IC=1.0mA, f=1.0kHz 150 600
hoe V
CE=10V, IC=1.0mA, f=1.0kHz 5.0 60 S
NF VCE=10V, IC=100µA, RG=3.0k,
f=100Hz, BW=20Hz 7.0 dB
TO-78 CASE
R1 (4-June 2013)
www.centralsemi.com
2N3810
2N3810A
SILICON
DUAL PNP TRANSISTORS
TO-78 CASE - MECHANICAL OUTLINE
MARKING: FULL PART NUMBER
MATCHING CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
hFE1/hFE2 (Note 1) V
CE=5.0V, IC=100µA (2N3810) 0.90 1.0
hFE1/hFE2 (Note 1) V
CE=5.0V, IC=100µA (2N3810A) 0.95 1.0
|VBE1-VBE2| V
CE=5.0V, IC=10µA to 10mA 5.0 mV
|VBE1-VBE2| V
CE=5.0V, IC=100µA (2N3810) 3.0 mV
|VBE1-VBE2| V
CE=5.0V, IC=100µA (2N3810A) 1.5 mV
Notes: (1) The lowest reading is taken as hFE1.
www.centralsemi.com
R1 (4-June 2013)
2N3810
2N3810A
SILICON
DUAL PNP TRANSISTORS
TYPICAL ELECTRICAL CHARACTERISTICS
R1 (4-June 2013)
www.centralsemi.com