Product Folder Sample & Buy Support & Community Tools & Software Technical Documents CSD19505KCS SLPS480B - JANUARY 2014 - REVISED OCTOBER 2014 CSD19505KCS 80 V N-Channel NexFETTM Power MOSFET 1 Features * * * * * * * 1 Product Summary Ultra-Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb-Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package TA = 25C TYPICAL VALUE Drain-to-Source Voltage 80 V Qg Gate Charge Total (10 V) 76 nC Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage 11 nC VGS = 6 V 2.9 m VGS = 10 V 2.6 m 2.6 V Ordering Information(1) 2 Applications * * UNIT VDS Secondary Side Synchronous Rectifier Motor Control Device Package Media Qty Ship CSD19505KCS TO-220 Plastic Package Tube 50 Tube (1) For all available packages, see the orderable addendum at the end of the data sheet. 3 Description Absolute Maximum Ratings This 80 V, 2.6 m, TO-220 NexFETTM power MOSFET is designed to minimize losses in power conversion applications. TA = 25C Drain (Pin 2) VALUE UNIT VDS Drain-to-Source Voltage 80 V VGS Gate-to-Source Voltage 20 V Continuous Drain Current (Package limited) 150 Continuous Drain Current (Silicon limited), TC = 25C 208 Continuous Drain Current (Silicon limited), TC = 100C 147 IDM Pulsed Drain Current (1) 400 A PD Power Dissipation 300 W TJ, Tstg Operating Junction and Storage Temperature Range -55 to 175 C EAS Avalanche Energy, single pulse ID = 101 A, L = 0.1 mH, RG = 25 510 mJ ID Gate (Pin 1) Source (Pin 3) . A (1) Max RJC = 0.5C/W, pulse duration 100 s, duty cycle 1% . . RDS(on) vs VGS Gate Charge 10 TC = 25C, I D = 100A TC = 125C, I D = 100A 9 VGS - Gate-to-Source Voltage (V) RDS(on) - On-State Resistance (m) 10 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 VGS - Gate-to- Source Voltage (V) 18 20 G001 ID = 100A VDS = 40V 9 8 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 Qg - Gate Charge (nC) 70 80 G001 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD19505KCS SLPS480B - JANUARY 2014 - REVISED OCTOBER 2014 www.ti.com Table of Contents 1 2 3 4 5 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Specifications......................................................... 1 1 1 2 3 5.1 Electrical Characteristics........................................... 3 5.2 Thermal Information .................................................. 3 5.3 Typical MOSFET Characteristics .............................. 4 6 Device and Documentation Support.................... 7 6.1 Trademarks ............................................................... 7 6.2 Electrostatic Discharge Caution ................................ 7 6.3 Glossary .................................................................... 7 7 Mechanical, Packaging, and Orderable Information ............................................................. 8 7.1 KCS Package Dimensions........................................ 9 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision A (February 2014) to Revision B Page * Updated Pulsed Drain Current Conditions ............................................................................................................................ 1 * Updated the SOA in Figure 10 ............................................................................................................................................... 6 Changes from Original (January 2014) to Revision A Page * Increased Pulsed Drain Current Limit ................................................................................................................................... 1 * Updated Figure 9.................................................................................................................................................................... 5 2 Submit Documentation Feedback Copyright (c) 2014, Texas Instruments Incorporated Product Folder Links: CSD19505KCS CSD19505KCS www.ti.com SLPS480B - JANUARY 2014 - REVISED OCTOBER 2014 5 Specifications 5.1 Electrical Characteristics (TA = 25C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 A IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 64 V 1 A IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 A RDS(on) Drain-to-Source On-Resistance gfs Transconductance 80 2.2 V 2.6 3.2 V VGS = 6 V, ID = 100 A 2.9 3.8 m VGS = 10 V, ID = 100 A 2.6 3.1 m VDS = 8 V, ID = 100 A 262 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Series Gate Resistance Qg Gate Charge Total (10 V) 76 nC Qgd Gate Charge Gate to Drain 11 nC Qgs Gate Charge Gate to Source 25 nC Qg(th) Gate Charge at Vth 15 nC Qoss Output Charge 214 nC td(on) Turn On Delay Time 31 ns tr Rise Time 16 ns td(off) Turn Off Delay Time 62 ns tf Fall Time 6 ns VGS = 0 V, VDS = 40 V, = 1 MHz VDS = 40 V, ID = 100 A VDS = 40 V, VGS = 0 V VDS = 50 V, VGS = 10 V, IDS = 100 A, RG = 0 6090 7820 pF 1600 2080 pF 26 34 pF 1.4 2.8 DIODE CHARACTERISTICS VSD Diode Forward Voltage ISD = 100 A, VGS = 0 V 0.9 1.1 V Qrr Reverse Recovery Charge nC Reverse Recovery Time VDS= 40 V, IF = 100 A, di/dt = 300 A/s 400 trr 88 ns 5.2 Thermal Information (TA = 25C unless otherwise stated) THERMAL METRIC MIN TYP MAX RJC Junction-to-Case Thermal Resistance 0.5 RJA Junction-to-Ambient Thermal Resistance 62 Submit Documentation Feedback Copyright (c) 2014, Texas Instruments Incorporated Product Folder Links: CSD19505KCS UNIT C/W 3 CSD19505KCS SLPS480B - JANUARY 2014 - REVISED OCTOBER 2014 www.ti.com 5.3 Typical MOSFET Characteristics (TA = 25C unless otherwise stated) 200 200 180 180 IDS - Drain-to-Source Current (A) IDS - Drain-to-Source Current (A) Figure 1. Transient Thermal Impedance 160 140 120 100 80 60 VGS =10V VGS =8V VGS =6V 40 20 0 0 0.1 0.2 0.3 0.4 0.5 VDS - Drain-to-Source Voltage (V) 0.6 0.7 VDS = 5V 160 140 120 100 80 60 TC = 125C TC = 25C TC = -55C 40 20 0 0 G001 Figure 2. Saturation Characteristics 4 Submit Documentation Feedback 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) 6 7 G001 Figure 3. Transfer Characteristics Copyright (c) 2014, Texas Instruments Incorporated Product Folder Links: CSD19505KCS CSD19505KCS www.ti.com SLPS480B - JANUARY 2014 - REVISED OCTOBER 2014 Typical MOSFET Characteristics (continued) (TA = 25C unless otherwise stated) 100000 ID = 100A VDS = 40V 9 8 10000 C - Capacitance (pF) VGS - Gate-to-Source Voltage (V) 10 7 6 5 4 3 1000 100 Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd 10 2 1 0 0 10 20 30 40 50 60 Qg - Gate Charge (nC) 70 1 80 0 10 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) G001 Figure 4. Gate Charge ID = 250uA 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.2 -75 -50 -25 RDS(on) - On-State Resistance (m) VGS(th) - Threshold Voltage (V) G001 10 1.4 Figure 6. Threshold Voltage vs Temperature TC = 25C, I D = 100A TC = 125C, I D = 100A 9 8 7 6 5 4 3 2 1 0 0 25 50 75 100 125 150 175 200 TC - Case Temperature (C) G001 0 2 4 6 8 10 12 14 16 VGS - Gate-to- Source Voltage (V) 18 20 G001 Figure 7. On-State Resistance vs Gate-to-Source Voltage 100 2.4 VGS = 6V VGS = 10V ISD - Source-to-Drain Current (A) Normalized On-State Resistance 80 Figure 5. Capacitance 3.2 2.2 70 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -75 -50 -25 TC = 25C TC = 125C 10 1 0.1 0.01 0.001 ID = 100A 0 25 50 75 100 125 150 175 200 TC - Case Temperature (C) G001 Figure 8. Normalized On-State Resistance vs Temperature 0.0001 0 0.2 0.4 0.6 0.8 VSD - Source-to-Drain Voltage (V) 1 G001 Figure 9. Typical Diode Forward Voltage Submit Documentation Feedback Copyright (c) 2014, Texas Instruments Incorporated Product Folder Links: CSD19505KCS 5 CSD19505KCS SLPS480B - JANUARY 2014 - REVISED OCTOBER 2014 www.ti.com Typical MOSFET Characteristics (continued) (TA = 25C unless otherwise stated) 1000 500 10us 100us 1ms 10ms DC IAV - Peak Avalanche Current (A) IDS - Drain-to-Source Current (A) 5000 100 10 1 Single Pulse Max RthetaJC = 0.5C/W 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) 1000 TC = 25C TC = 125C 100 10 0.01 G001 Figure 10. Maximum Safe Operating Area 0.1 TAV - Time in Avalanche (mS) 1 G001 Figure 11. Single Pulse Unclamped Inductive Switching IDS - Drain- to- Source Current (A) 175 150 125 100 75 50 25 0 -50 -25 0 25 50 75 100 125 150 175 200 TC - Case Temperature (C) G001 Figure 12. Maximum Drain Current vs Temperature 6 Submit Documentation Feedback Copyright (c) 2014, Texas Instruments Incorporated Product Folder Links: CSD19505KCS CSD19505KCS www.ti.com SLPS480B - JANUARY 2014 - REVISED OCTOBER 2014 6 Device and Documentation Support 6.1 Trademarks NexFET is a trademark of Texas Instruments. 6.2 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 6.3 Glossary SLYZ022 -- TI Glossary. This glossary lists and explains terms, acronyms, and definitions. Submit Documentation Feedback Copyright (c) 2014, Texas Instruments Incorporated Product Folder Links: CSD19505KCS 7 CSD19505KCS SLPS480B - JANUARY 2014 - REVISED OCTOBER 2014 www.ti.com 7 Mechanical, Packaging, and Orderable Information The following pages include mechanical packaging and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 8 Submit Documentation Feedback Copyright (c) 2014, Texas Instruments Incorporated Product Folder Links: CSD19505KCS CSD19505KCS www.ti.com SLPS480B - JANUARY 2014 - REVISED OCTOBER 2014 7.1 KCS Package Dimensions Pin Configuration Position Designation Pin 1 Gate Pin 2 / Tab Drain Pin 3 Source Submit Documentation Feedback Copyright (c) 2014, Texas Instruments Incorporated Product Folder Links: CSD19505KCS 9 PACKAGE OPTION ADDENDUM www.ti.com 18-Oct-2014 PACKAGING INFORMATION Orderable Device Status (1) CSD19505KCS ACTIVE Package Type Package Pins Package Drawing Qty TO-220 KCS 3 50 Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Pb-Free (RoHS) CU SN N / A for Pkg Type Op Temp (C) Device Marking (4/5) -55 to 175 CSD19505KCS (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. 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