A Product Line of Diodes Incorporated DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.4mm ultra low profile package for thin application 0.9A 0.6mm package footprint, 10 times smaller than SOT23 Low VGS(th), can be driven directly from a battery 0.7A Low RDS(on) Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) ESD Protected Gate 2kV This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it Qualified to AEC-Q101 Standards for High Reliability ideal for high efficiency power management applications. Mechanical Data RDS(on) ID TA = +25C 460m @ VGS= 4.5V 560m @ VGS= 2.5V V(BR)DSS 30V Description Applications 2 Case: X2-DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound. Load Switch Portable Applications Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminals: Finish - NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.001 grams (approximate) UL Flammability Classification Rating 94V-0 Drain X2-DFN1006-3 Body Diode S Gate D G ESD PROTECTED TO 2kV Bottom View Top View Gate Protection Diode Source Equivalent Circuit Ordering Information (Note 4) Part Number DMN3730UFB4-7 DMN3730UFB4-7B Notes: Marking NF NF Reel size (inches) 7 7 Tape width (mm) 8 8 Quantity per reel 3000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information DMN3730UFB4-7 DMN3730UFB4-7B NF NF Top View Dot Denotes Drain Side DMN3730UFB4 Document number: DS35017 Rev. 5 - 2 NF = Product Type Marking Code Top View Bar Denotes Gate and Source Side 1 of 6 www.diodes.com July 2013 (c) Diodes Incorporated A Product Line of Diodes Incorporated DMN3730UFB4 Maximum Ratings (@TA = +25C, unless otherwise specified.) Symbol Value Drain-Source Voltage Characteristic VDSS 30 Gate-Source Voltage VGSS 8 (Note 6) Continuous Drain Current 0.73 (Note 5) Pulsed Drain Current V 0.91 ID VGS = 4.5V TA = +70C (Note 6) Unit A 0.75 (Note 7) IDM 3 Symbol Value Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient (Note 6) (Note 5) (Note 6) (Note 5) 0.69 0.47 180 258 PD RJA Operating and Storage Temperature Range W C/W -55 to +150 TJ, TSTG Unit C Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 30 -- -- V Zero Gate Voltage Drain Current IDSS -- -- 1 A VDS = 30V, VGS = 0V Gate-Source Leakage IGSS -- -- 3 A VGS = 8V, VDS = 0V VGS(th) 0.45 -- 0.95 V VDS = VGS, ID = 250A -- -- -- -- -- -- 460 -- -- mS VDS = 3V, ID = 10mA V VGS = 0V, IS = 300mA VGS = 0V, ID = 10A ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance (Note 8) RDS(on) 560 VGS = 4.5V, ID = 200mA m 730 Forward Transfer Admittance |Yfs| 40 Diode Forward Voltage (Note 8) VSD -- 0.7 1.2 VGS = 2.5V, ID = 100mA VGS = 1.8V, ID = 75mA DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss -- 64.3 -- pF Output Capacitance Coss -- 6.1 -- pF Reverse Transfer Capacitance Crss -- 4.5 -- pF Gate Resistance Rg -- 70 -- Total Gate Charge Qg -- 1.6 -- nC Gate-Source Charge Qgs -- 0.2 -- nC Gate-Drain Charge Qgd -- 0.2 -- nC Turn-On Delay Time tD(on) -- 3.5 -- ns Turn-On Rise Time tr -- 2.8 -- ns tD(off) -- 38 -- ns tf -- 13 -- ns Turn-Off Delay Time Turn-Off Fall Time Notes: VDS = 25V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 15V, ID = 1A VDS = 10V, ID = 1A VGS = 10V, RG = 6 5. For a device surface mounted on a minimum recommended pad layout of an FR4 PCB, in still air conditions; the device is measured when operating in steady-state condition. 6. Same as note 4, except the device measured at t 10 sec. 7. Same as note 4, except the device is pulsed at duty cycle of 1% for a pulse width of 10s. 8. Measured under pulsed conditions to minimize self-heating effect. Pulse width 300s; duty cycle 2% 9. For design aid only, not subject to production testing. DMN3730UFB4 Document number: DS35017 Rev. 5 - 2 2 of 6 www.diodes.com July 2013 (c) Diodes Incorporated A Product Line of Diodes Incorporated DMN3730UFB4 2.0 2.0 VGS = 10V VGS = 4.5V VDS = 5V VGS = 2.5V 1.5 ID, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) VGS = 3.0V VGS = 2.0V VGS = 1.5V 1.0 0.5 1.5 1.0 0.5 TA = 150C TA = 85C TA = 125C T A = 25C TA = -55C 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 5 0.8 0.6 VGS = 1.8V 0.4 VGS = 2.5V VGS = 4.5V 0.2 0 0 0.4 0.8 1.2 1.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 4.5V ID = 1.0A 1.4 VGS = 2.5V ID = 500mA 1.2 1.0 0.8 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature DMN3730UFB4 Document number: DS35017 Rev. 5 - 2 3 of 6 www.diodes.com 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 3 0.8 VGS = 4.5V 0.6 T A = 150C T A = 125C TA = 85C 0.4 TA = 25C TA = -55C 0.2 0 0 RDSON , DRAIN-SOURCE ON-RESISTANCE () RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0 2 1.6 0.6 -50 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 0.25 0.5 0.75 1 1.25 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.5 0.8 0.6 VGS = 2.5V ID = 500mA 0.4 VGS = 4.5V ID = 1.0A 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature July 2013 (c) Diodes Incorporated A Product Line of Diodes Incorporated DMN3730UFB4 2.0 1.0 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.2 0.8 ID = 1mA 0.6 ID = 250A 0.4 1.6 TA = 25C 1.2 0.8 0.4 0.2 0 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 100 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 10,000 IDSS, LEAKAGE CURRENT (nA) C, CAPACITANCE (pF) Ciss Coss 10 Crss TA = 150C 1,000 TA = 125C 100 TA = 85C 10 TA = 25C f = 1MHz 1 1 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 30 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 30 VGS, GATE-SOURCE VOLTAGE (V) 8 VDS = 15V ID = 1A 6 4 2 0 0 0.5 1 1.5 2 2.5 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMN3730UFB4 Document number: DS35017 Rev. 5 - 2 3 4 of 6 www.diodes.com July 2013 (c) Diodes Incorporated A Product Line of Diodes Incorporated DMN3730UFB4 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA (t) = r(t) * R JA RJA = 253C/W D = 0.02 0.01 D = 0.01 P(pk) t2 TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 t1 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response 10 100 1,000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. X2-DFN1006-3 Dim Min Max Typ A 0.40 A1 0 0.05 0.02 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 All Dimensions in mm A A1 D b1 E e b2 L2 L3 L1 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version. C X1 X G2 G1 Y Dimensions Z G1 G2 X X1 Y C Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 Z DMN3730UFB4 Document number: DS35017 Rev. 5 - 2 5 of 6 www.diodes.com July 2013 (c) Diodes Incorporated A Product Line of Diodes Incorporated DMN3730UFB4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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