BFR96
BFR96G
Advanced Power Technology reser
ves the right to change, without notice, the specifications and information contained herei n
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005
* G Deno tes RoHS Compliant, Pb Free Terminal Finish
DESCRIPTION: De signed primarily for use in high -gain, low n oise, small-signal amplifiers. Also used in
application s req uiring fast switching times .
ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C)
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage 15 Vdc
VCBO Co lle ctor-Base Voltage 20 Vdc
VEBO Emitter-Base Voltage 3.0 Vdc
ICColl ector Current 100 mA
Thermal Data
PDTotal Device Dissipation @ TC = 100ºC
Derat e above 100ºC 500
10 mWatts
mW/ ºC
Macro T
(STYLE #2)
Features
•High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA
•Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz
•High Power Gain – Gmax = 14.5dB (typ) @ f = 0.5 GHz
140 COMMERCE DRIVE
MONTGOMERYVILLE , PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
BFR96
BFR96G
Advanced Power Technology reser
ves the right to change, without notice, the s pecifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005
ELECTRICAL SPECIFICATIO NS (Tcase = 25°C)
STATIC
(off) Value
Symbol Test Conditions Min. Typ. Max. Unit
BVCEO Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0) 15 - - Vdc
BVCB0 Collector-Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0) 20 - - Vdc
BVEBO Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0) 3.0 - - Vdc
ICBO Collector Cutoff Current
(VCB = 10 Vdc, VBE = 0 Vdc) - - 100 nA
(on)HFE DC Current Gain
(IC = 50 mAdc, VCE = 10 Vdc) 30 -200 -
DYNAMIC Value
Symbol Test Conditions Min. Typ. Max. Unit
Ftau Current-Gain – Bandwidth Product
(IC = 50 m A, VCE = 10 Vdc, f = 0.5 GHz) -5.0 - GHz
CCB Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) -2.6 3.2 pF
BFR96
BFR96G
Advanced Power Technology reser
ves the right to change, without notice, the s pecifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005
FUNCTIONAL Value
Symbol Test Conditions Min. Typ. Max. Unit
NF Noise Figure
(IC = 10 m Adc, VCE = 10 Vdc, f = 0.5 GHz) -2.0 -dB
|S21|2Inse rtion Gain
(IC = 50 m Adc, VCE = 10 Vdc, f = 0.5 GHz) 12 13 -dB
MSG Maximum Stable Gain
(IC = 50 m Adc, VCE = 10 Vdc, f = 0.5 GHz) -16.5 -dB
GU max Maximum Unilate ral Gain (1)
(IC = 50 m Adc, VCE = 10 Vdc, f = 0.5 GHz) -14.5 -dB
Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mA
fS11 S21 S12 S22
(MHz) |S11| ∠ φ |S21| ∠ φ |S12| ∠ φ |S22| ∠ φ
100 0.388 -130 21 112 0.029 66 0.416 -54
200 0.422 -158 11 94 0.046 89 0.277 -71
300 0.432 -168 7.5 86 0.064 72 0.229 -79
500 0.447 178 4.6 75 0.103 75 0.224 -92
700 0.454 170 3.4 65 0.144 74 0.246 -100
800 0.462 167 361 0.165 74 0.26 -103
1000 0.479 159 2.5 53 0.212 72 0.284 -112
1500 0.470 138 1.8 32 0.333 66 0.375 -134
BFR96
BFR96G
Advanced Power Technology reser
ves the right to change, without notice, the s pecifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005
RF Low Power, PA, LNA, & General Purpose Selector Guide.
Low Cost Plastic Package Types
Efficiency (%)
GPE Freq (MHz)
(MHz)
Freq (MHz)
Gu Max (dB)
IC max (mA)
Package
Device
IC max (mA)
RF (Low Power PA / General Pur pos e) Selec tion Guide
MACRO X MRF559 NPN 870 0.5 6.5 70 7.5 16 150
MACRO X MRF559 NPN 870 0.5 9.5 65 12.5 16 150
SO-8 MRF8372,R1,R2 NPN 870 0.75 855 12.5 16 200
POWER MACRO MRF557 NPN 870 1.5 855 12.5 16 400
POWER MACRO MRF557T NPN 870 1.5 855 12.5 16 400
MACRO X MRF559 NPN 512 0.5 10 65 7.5 16 150
MACRO X MRF559 NPN 512 0.5 13 60 12.5 16 150
TO-39 2N3866A NPN 400 1 10 45 28 30 400
SO-8 MRF3866, R1, R2 NPN 400 1 10 45 28 30 400
POWER MACRO MRF555 NPN 470 1.5 11 50 12.5 16 400
POWER MACRO MRF555T NPN 470 1.5 11 50 12.5 16 400
SO-8 MRF4427, R2 NPN 175 0.15 18 60 12 20 400
TO-39 2N4427 NPN 175 110 50 12 20 400
POWER MACRO MRF553 NPN 175 1.5 11.5 60 12.5 16 500
POWER MACRO MRF553T NPN 175 1.5 11.5 50 12.5 16 500
TO-39 MRF607 NPN 175 1.75 11.5 50 12.5 16 330
TO-39 2N6255 NPN 175 37.8 50 12.5 18 1000
TO-72 2N5179 NPN 200 20 612 50
Pout (watts)
GPE (dB)
GPE VCC
BVCEO
Type
Package
Device
Type
NF (dB)
NF IC (mA)
NF VCE
GN (dB)
Ftau (MHz)
Ccb(pF)
BVCEO
TO-39 2N5109 NPN 200 310 15 12 1200 3.5 20 400
TO-39 MRF5943C NPN 200 3.4 30 15 11.4 1000 30 400
SO-8 MRF5943, R1, R2 NPN 200 3.4 30 15 15 1300 30 400
TO-72 2N5179 NPN 200 4.5 1.5 617 900 112 50
TO-72 2N2857 NPN 300 5.5 50 613 1600 115 40
TO-39 MRF517 NPN 300 7.5 50 15 5.5 4600 325 150
TO-72 MRF904 NPN 450 1.5 5 6 11 4000 1 15 30
TO-72 2N6304 NPN 450 5 2 5 14 1400 1 15 50
MACRO T BFR91 NPN 500 1.9 2 5 11 16.5 5000 1 12 35
MACRO T BFR96 NPN 500 2 10 10 14.5 500 2.6 15 100
SO-8 MRF5812, R1, R2 NPN 500 2 50 10 15.5 17.8 5000 15 200
MACRO X MRF581A NPN 500 2 50 10 14 15 5000 15 200
Macro BFR90 NPN 500 2.4 2 10 15 18 5000 1 15 30
TO-72 BFY90 NPN 500 2.5 2 5 20 1300 15 50
TO-72 MRF914 NPN 500 2.5 5 10 15 4500 12 40
MACRO X MRF581 NPN 500 2.5 50 10 15 17.8 5000 16 200
TO-39 MRF586 NPN 500 3 90 15 11 14.5 4500 2.2 17 200
MACRO X MRF951 NPN 1000 1.3 5 6 14 17 8000 0.45 10 100
MACRO X MRF571 NPN 1000 1.5 10 6 10 8000 1 10 70
MACRO T BFR91 NPN 1000 2.5 2 5 8 11 5000 1 12 35
MACRO T BFR90 NPN 1000 3 2 10 10 12.5 5000 1 15 30
TO-39 MRF545 PNP 14 1400 270 400
TO-39 MRF544
NPN
13.5 1500 70 400
RF (LNA / General Purpose) Selec tion Guide
1
2
3
1
2
3
1
2
3
4
1
4
85
BFR96
BFR96G
Advanced Power Technology reser
ves the right to change, without notice, the s pecifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005
Macro T Macro X Power Macro SO-8
1.
2.
3.
PIN 1. COLLECTOR
2. EMITTER
3. BASE
