ES (su Single Diode AA YaykF NUP S4A-K D1FJ10 Schottky Barrier Diode Hs Surface Mount M4i72354ER) OUTLINE DIMENSIONS 100V 1A @/)\2SMD @Tj150C @1EK IR=0.2mMA @SRER @DC/DCAYI\-9 ORE. TL. OA thie OE. K-J7) LEE Bree RATINGS . Unit : Package : 1F maa D214 AVF? Cathode mark a | sy Sal Nas * aN 4 x I@ I 2.0 he Dy his (6) 20] 42 Type No. Date code - WWE VUE FRYKDBE NA 5.0*0.3 Standard soldering pad | ||: i 4S 1.23 L215) oa! S (Gh EO EIR ITO eT ISFREMLAR SE OO @iEXtRATH Absolute Maximum Ratings GREOewe Tc =25C) < 728) wi OA nue m DIEJI0 BEAT Item Symbol] Conditions Type No. Unit PRA 5p~ q Storage Temperature Tstg 55~ 150 C Re WE ; 9 Operating Junction Temperature Tj 150 C A BE Maximum Reverse Voltage VRM 100 V =o TVS FERRE HW eae 50Hz IESE, HOPE Ta=s2C On alumina substrate 1.00 Average Rectified Forward Current lo 50Hz sine wave, R-load Ta-36C PY Y pM 08 A On glass-epoxy substrate . CAT VIR I 50Hz IESE, JERROD KL 1 aba 7 Vet AEE, ~T)= 25C 50 A Peak Surge Forward Current FSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25C SAY - SAVE Electrical Characteristics G8#O2VHe TI=25C) NEE _ INV ARE Forward Voltage VF IF= 10A, Pulse measurement MAX 0.72 Vv ETL _ ISU AWE Reverse Current Ir VR= VRM, Pulse measurement MAX 0.2 mA RERE ; _ _ Junction Capacitance Cj f= 1MHz, Vr=10V TYP 63 pF : GE U Pia Oj! Junction and lead MAX 23 aR TVS FIIEE Thermal Resistance . EOUB - BARS On alumina substrate MAX 108 C/W Aja Junction and ambient Py vy b RIE On glass-epoxy substrate MAX 157 J515-5 Shindengen TOKYO. JAPAN.MsttE] CHARACTERISTIC DIAGRAMS Schottky Barrier D iode D1FJ10 ny S WR Tele IRBABARR HARRY TIRE KS Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability 10 12 80 - 0 LTE Sine wave lead ! 70 5 po IP petp/r 5 fi T < '10ms 10ms! TI=150C (MAX) eo 3 levde < 2 TI=150C (TYP) = 0.8 sp [nace & TI= 25 (MAX) a S yl Ti= 250 (TYP) K 06 @ a te Bp { : 30 Ej ff 04 = = x xe 2 0.2 [Pulse measurement] I #2 FE Vr (V) 0.2 HHA we To [AJ be So 2 HHBBE (cycle) Wi RE WBABARR HARE Reverse Current Reverse Power Dissipation Junction Capacitance 100 3.5 1000 oe st i =150C (TYP) ap 7 D a4 =125C (TYP) 25 Tj=150C _ 4 Ti=100C (TYP) = 100 3 a & % Od a 2 5 is Es a pe 001 50C (TYP zp 15 K s) ie S10 a C(TYP) mA 0.0001 0.5 (Pulse measurement) 10 jt EE Ve (VJ jt EE Ve (VJ jt EE Ve (VJ F4IbF4-TGHAT Ta-lo Derating Curve Ta-lo 2 15 TVET RE 8 ENE PYYbIVE ammo BE 200 PVA AE 0.64t Hat lo (AJ 0.5 JABHYRE Ta (CC) F4IbF4-TGHAT Ta-lo Derating Curve Ta-lo 14 DC 12 z SUV REE Ss esa 08 a PAE ammO iS HBES 350 iP 06 R Est JABHYRE Ta (CC) Shindengen_ TOKYO. JAPAN. J515-5 A5