4-81
4.8 V NPN Common Emitter
Output Power Transistor
for␣ GSM Class IV Phones
Technical Data
Features
• 4.8 Volt Pulsed Operation
(pulse width = 577 µsec,
duty cycle = 12.5%)
• +35.0 dBm Pout @ 900 MHz,
Typ.
• 65% Collector Efficiency
@␣ 900 MHz, Typ.
• 9 dB Power Gain @ 900 MHz,
Typ.
• Internal Input Pre-Matching
Facilitates Cascading
Applications
• Output Power Device for
GSM Class IV Handsets
AT-36408
Description
Hewlett Packard’s AT-36408
combines internal input pre-
matching with low cost, NPN
power silicon bipolar junction
transistors in a SOIC-8 surface
mount plastic package. This
device is designed for use as the
output device for GSM Class IV
handsets. At 4.8 volts, the device
features +35 dBm pulsed output
power, superior power added
efficiency, and excellent gain,
making the AT-36408 an excellent
choice for battery powered
systems.
The AT-36408 is fabricated with
Hewlett Packard’s 10 GHz Ft Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
SOIC-8 Surface Mount
Plastic Package
Outline P8
Pin Configuration
EMITTER
EMITTER
EMITTER
EMITTER
BASE BASE
18
27
COLLECTORCOLLECTOR 3 6
45
5965-5960E
4-82
AT-36408 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum[1]
VEBO Emitter-Base Voltage V 1.4
VCBO Collector-Base Voltage V 16.0
VCEO Collector-Emitter Voltage V 9.5
ICCollector Current[2] A 1.7
PTPeak Power Dissipation [2, 3] W 8.6
TjJunction Temperature °C 150
TSTG Storage Temperature °C -65 to 150
Thermal Resistance[4]:
θjc = 60°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. Pulsed operation, pulse width = 577␣ µsec, duty cycle␣ =␣ 12.5%.
3. Derate at 133.3 mW/°C for TC␣>␣85 °C. TC is defined to be the temperature of
the collector pins 3 and 6, where the lead contacts the circuit board.
4. Using the liquid crystal technique, VCE = 4.5 V, Ic= 100 mA, Tj=150°C, 1- 2␣ µm
“hot-spot” resolution.
Electrical Specifications, TC = 25°C
Symbol Parameters and Test Conditions Units Min. Typ. Max.
Freq. = 900 MHz, VCE = 4.8 V, ICQ = 50 mA, pulsed operation, pulse width =
577 µsec, duty cycle = 12.5%, Test Circuit A,unless otherwise specified
Pout Output Power[1] Pin = +26 dBm dBm +34.0 +35.0
ηCCollector Efficiency[1] Pin = +26 dBm % 55 65
H2 2nd Harmonic[1] F0 = 900 MHz dBc -50
H3 3rd Harmonic[1] F0 = 900 MHz dBc -40
Mismatch Tolerance, No Damage[1] Pout = +35 dBm 7:1
any phase, 2 sec duration
BVEBO Emitter-Base Breakdown Voltage IE = 0.8 mA, open collector V 1.4
BVCBO Collector-Base Breakdown Voltage IC = 4.0 mA, open emitter V 16.0
BVCEO Collector-Emitter Breakdown Voltage IC = 20.0 mA, open base V 9.5
hFE Forward Current Transfer Ratio VCE = 3 V, IC = 180 mA — 80 150 330
ICEO Collector Leakage Current VCEO = 5 V µA50
Note:
1. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit A (GSM).
4-83
AT-36408 Typical Performance, TC = 25°C
Frequency = 900 MHz, VCE = 4.8 V, ICQ = 50 mA, pulsed operation, pulse width␣ =␣ 577␣ µsec, duty cycle␣ =␣ 12.5%,
Test Circuit A (GSM), unless otherwise specified.
14
18
38
34
22
26
30
5
20
35
95
80
50
65
618161081412 2220 282624
OUTPUT POWER (dBm)
COLLECTOR EFFICIENCY (%)
INPUT POWER (dBm)
Figure 1. Output Power and Collector
Efficiency vs. Input Power.
13
23
28
18
33
38
OUTPUT POWER (dBm)
INPUT POWER (dBm)
Figure 2. Output Power vs. Input
Power Over Bias Voltage.
0
20
10
30
40
80
70
50
60
COLLECTOR EFFICIENCY (%)
INPUT POWER (dBm)
Figure 3. Collector Efficiency vs.
Input Power Over Bias Voltage.
Figure 5. Output Power and
Collector Efficiency vs. Frequency.
Note: Tuned at 900 MHz, then swept over frequency.
Figure 6. Input and Output Return
Loss vs. Frequency.
15 2117 19 23 282725
612810 14 2016 18 22 2624
Pout
Γsource = 0.88 ∠ -171
Γload = 0.85 ∠ +172 Γsource = 0.88 ∠ -171
Γload = 0.85 ∠ +172
27
29
30
31
28
32
33
36
34
35
OUTPUT POWER (dBm)
INPUT POWER (dBm)
Figure 4. Output Power vs. Input
Power Over Temperature.
TC = +85°C
TC = +25°C
TC = –40°C
3.6 V
4.8 V
6.0 V
Γsource = 0.88 ∠ -171
Γload = 0.85 ∠ +172
3.6 V
4.8 V
6.0 V
Γsource = 0.88 ∠ -171
Γload = 0.85 ∠ +172 Γsource = 0.88 ∠ -171
Γload = 0.85 ∠ +172
34.0
34.2
34.4
34.6
36.0
34.8
35.0
35.2
35.4
35.6
35.8
55
59
75
63
67
71
OUTPUT POWER (dBm)
FREQUENCY (MHz)
880
Γsource = 0.88 ∠ -171
Γload = 0.85 ∠ +172
-25
-20
-15
-10
0
-5
RETURN LOSS (dB)
COLLECTOR EFFICIENCY (%)
FREQUENCY (MHz)
800 850 950 1000900890 910 920900
Output R.L.
Input R.L.
ηc
618161081412 2220 282624
Pout
Pin = +26 dBm
ηc
4-84
SPICE Model Parameters
Die Model Packaged Model
C
CPad
CPad
Die Area = 1.2
CPad = 0.3 pF E1
B
E2
CPad
Label
BF
IKF
ISE
NE
VAF
NF
TF
XTF
VTF
ITF
PTF
XTB
BR
IKR
ISC
NC
VAR
NR
Value
280
299.9
9.9E-11
2.399
33.16
0.9935
1.6E-11
0.006656
0.02785
0.001
23
0
54.61
81
8.7E-13
1.587
1.511
0.9886
Label
TR
EG
IS
XTI
CJC
VJC
MJC
XCJC
FC
CJE
VJE
MJE
RB
IRB
RBM
RE
RC
Value
1E-9
1.11
3.598E-15
3
0.8E-12
0.4831
0.2508
0.001
0.999
6.16E-12
1.186
0.5965
0.752
0
0.01
1.27
0.107
12
13
14
20
19
17
18
15
16
0462108
Ccb
(pF)
Vcb (V)
Figure 7. Collector-Base Capacitance
vs. Collector-Base Voltage (DC Test).
AT-36408 Typical Large Signal Impedances
VCE = 4.8 V, ICQ = 50 mA, Pulsed Operation, Pout = +35.0 dBm
Freq. Γ source Γ load
MHz Mag. Ang. Mag. Ang.
880 0.882 -170.0 0.847 172.7
890 0.885 -170.5 0.849 172.2
900 0.887 -171.1 0.851 171.6
910 0.890 -171.4 0.853 171.1
915 0.891 -169.0 0.854 168.4
920 0.893 -168.4 0.855 168.2
Label
Rlead
Llead
Rwire
Lwire
Cpkg1
Cpkg2
LE1
Value
0.63 Ω
1.45 nH
1.3 Ω
0.52 nH
0.4 pF
1.2 pF
0.3 nH
Label
LE2
Cbase
Rwbase
Lwbase
Rwbb
Lwbb
Value
0.00064 nH
46.0 pF
0.2 Ω
1.19 nH
0.1 Ω
0.1 nH
Lwbase
Rwbase
Lwbase
Rwbase
Lwbase
Rwbase
Lwbase
Rwbase
Lwbb
Rwbb
Lwbb
Rwbb
Lwbb
Rwbb
Cpkg1
Cpkg1
Cpkg2
Cbase
B
E1
Rlead
Rlead
Llead
Llead
L=0
L=0
R= 1 Ω
Cbase Die
Die
LE1 LE2
Lwire
Rwire
Lwire
Rwire
Cpkg1 Cpkg2
CRlead Llead
E2 Rlead Llead
Cpkg2
LE1 LE2
Die
LE1 LE2
Die
LE1 LE2
R=1 Ω
4-85
AT-36408 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω
VCE = 3.6 V, Ic = 200 mA, Tc = 25°C
Freq. S11 S21 S12 S22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.05 0.96 -175 22.3 13.08 93 -38.4 0.012 11 0.74 -169
0.10 0.96 -178 16.4 6.61 88 -37.7 0.013 13 0.74 -174
0.25 0.96 177 8.8 2.76 80 -36.5 0.015 24 0.75 -177
0.50 0.94 173 4.2 1.63 66 -34.4 0.019 33 0.73 -177
0.75 0.90 169 3.4 1.49 46 -32.0 0.025 27 0.71 -172
0.90 0.84 168 4.2 1.63 24 -32.0 0.025 10 0.72 -165
1.00 0.79 170 4.6 1.70 0 -34.0 0.020 -14 0.81 -160
1.25 0.92 175 -1.2 0.87 -68 -37.1 0.014 126 1.01 -172
1.50 0.97 169 -9.6 0.33 -98 -30.2 0.031 97 0.96 -177
V CE = 4.8 V, Ic = 200 mA, Tc = 25°C
0.05 0.96 -174 22.6 13.42 93 -37.7 0.013 11 0.74 -169
0.10 0.96 -178 16.6 6.79 88 -37.7 0.013 13 0.73 -174
0.25 0.96 178 9.0 2.83 80 -36.5 0.015 23 0.74 -177
0.50 0.94 173 4.4 1.66 66 -34.4 0.019 32 0.72 -176
0.75 0.90 169 3.6 1.51 46 -32.4 0.024 26 0.70 -172
0.90 0.84 168 4.3 1.64 24 -32.0 0.025 9 0.72 -164
1.00 0.80 170 4.6 1.71 0 -34.0 0.020 -14 0.81 -160
1.25 0.92 175 -1.0 0.89 -67 -37.1 0.014 126 1.01 -171
1.50 0.97 169 -9.4 0.34 -97 -30.2 0.031 97 0.96 -177
V CE = 6.0 V, Ic = 200 mA, Tc = 25°C
0.05 0.96 -174 22.7 13.60 93 -37.7 0.013 12 0.73 -169
0.10 0.96 -178 16.7 6.88 88 -37.1 0.014 14 0.72 -174
0.25 0.96 178 9.2 2.87 79 -35.9 0.016 23 0.73 -177
0.50 0.94 173 4.5 1.68 65 -34.0 0.020 30 0.71 -176
0.75 0.90 169 3.7 1.52 45 -32.0 0.025 24 0.69 -171
0.90 0.85 168 4.3 1.64 23 -32.0 0.025 8 0.72 -164
1.00 0.80 170 4.6 1.70 0 -34.0 0.020 -14 0.81 -159
1.25 0.92 175 -1.0 0.90 -67 -37.7 0.013 125 1.01 -171
1.50 0.97 169 -9.2 0.35 -97 -30.2 0.031 96 0.95 -177
Typical Performance
-10
-5
0
35
5
10
15
20
25
30
0.05 0.500.10 0.25 0.75 1.50
GAIN
(dB)
FREQUENCY (GHz)
Figure 8. Insertion Power Gain,
Maximum Available Gain, and Maximum
Stable Gain vs. Frequency. V
CE
= 3.6V,
Ic = 200 mA.
1.000.90 1.25 -10
-5
0
35
5
10
15
20
25
30
0.05 0.500.10 0.25 0.75 1.50
GAIN
(dB)
FREQUENCY (GHz)
Figure 9. Insertion Power Gain,
Maximum Available Gain, and Maximum
Stable Gain vs. Frequency. V
CE
= 4.8V,
Ic = 200 mA.
1.000.90 1.25 -10
-5
0
35
5
10
15
20
25
30
0.05 0.500.10 0.25 0.75 1.50
GAIN
(dB)
FREQUENCY (GHz)
Figure 10. Insertion Power Gain,
Maximum Available Gain, and Maximum
Stable Gain vs. Frequency. V
CE
= 6.0V,
Ic = 200 mA.
1.000.90 1.25
MSG
MAG MSG
|S
21
|
2
MSG
MAG MSG
|S
21
|
2
MSG
MAG MSG
|S
21
|
2
4-86
Test Circuit A: Test Circuit Board Layout @ 900 MHz (GSM)
V
BB
V
CC
V
CC
C8 C9
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
R1
R2
R3
R4
R5
T1
L1
L2
39.0 pF
39.0 pF
100.0 nF
12.5 pF
11.5 pF
100.0 nF
39.0 pF
1.5 µF
10.0 µF
39.0 pF
2.2 Ω
619.0 Ω
2.2 Ω
10.0 Ω
10.0 Ω
MBT 2222A
18.0 µH
18.0 µH
9/96
OUTPUTINPUT B–MFG0140
PA2 DEMO
76.2 (3.0)
38.1 (1.5)
V
BB
Pulse Test
V
CE
= 4.8 V
I
CQ
= 50 mA
Freq. = 900 MHz
Test Circuit:
FR-4 Microstrip, glass epoxy board
Dielectric Constant = 4.5
Thickness = 0.79 (.031)
NOTE:
Dimensions are shown in millimeters (inches).
R5
R4
R3
R1
T1
R2
C6
C7
C10C5C4
C2
C1
C3
L2
L1
Test Circuit A: Test Circuit Schematic Diagram @ 900 MHz (GSM)
619 Ω
V
BB
V
CC
2.2 Ω
RF IN
39 pF
2.2 Ω100 nF
10 Ω
80 Ω80 Ω
50 Ω
50 Ω
λ/4 @ 900 MHz λ/4 @ 900 MHz
18 µH
B
CE
DC
Transistor
39 pF 39 pF
12.5 pF = 1.52 (.060)
39 pF
RF OUT
11.5 pF
= 4.88 (.192)
10 Ω
18 µH100 nF 1.5 µF 10 µF
Pulse Test
V
CE
= 4.8 V
I
CQ
= 50 mA
Freq. = 900 MHz
4-87
Part Number Ordering Information
Part Number No. of Devices Container
AT-36408-TR1 1000 7" Reel
AT-36408-BLK 25 Carrier Tape
Package Dimensions
SOIC-8 Surface Mount Plastic Package
5.84/6.20
(.230/.244)
3.80/4.00
(.1497/.1574)
Pin 1
1.27 (.050)
6x
4.72/5.00
(.186/.197)
0.10/0.25
(.004/.0098)
0.33/0.51
(.013/.020) 8X
1.35/1.75
(.0532/.0688)
0.19/0.25
(.0075/.0098)
0.41/1.27
(.016/.050)
0°/8°
0.38 ± 0.10
(.015 ± .004) x 45°
0.10 (.004)
Note:
1. Dimensions are shown in millimeters (inches).
4-88
Tape Dimensions and Product Orientation
For Package SOIC-8
USER
FEED
DIRECTION COVER TAPE
CARRIER
TAPE
REEL
t
CW
F
E
EMBOSSMENT
P
2
10 PITCHES CUMULATIVE
TOLERANCE ON TAPE
±0.2 MM (±0.008)
USER FEED
DIRECTION
P
0
D
0
COVER
TAPE
T
P
1
D
1
K
DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A
B
K
P
1
D
1
6.45 ± 0.10
5.13 ± 0.10
2.11 ± 0.10
8.00 ± 0.10
1.50 min.
0.254 ± 0.004
0.202 ± 0.004
0.083 ± 0.004
0.315 ± 0.004
0.059 min.
CAVITY
DIAMETER
PITCH
POSITION
D
0
P
0
E
1.50 + 0.10/-0
4.00 ± 0.10
1.75 ± 0.10
0.059 + 0.004/-0
0.157 ± 0.004
0.069 ± 0.004
PERFORATION
WIDTH
THICKNESS W
t8.00 ± 0.30
0.255 ± 0.013 0.315 ± 0.012
0.0100 ± 0.0005
CARRIER TAPE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)
F
P
2
5.51 ± 0.05
2.00 ± 0.05
0.217 ± 0.002
0.079 ± 0.002
DISTANCE
BETWEEN
CENTERLINE
WIDTH
TAPE THICKNESS C
T9.19 ± 0.10
0.051 ± 0.010 0.362 ± 0.004
0.0020 ± 0.0004
COVER TAPE
B
CENTER LINES
OF CAVITY
A
