RFP15N05L - Fairchild Semiconductor

RFP15N05L

15A, 50V, 0.140 Ohm, Logic Level N-

Channel Power MOSFETs

These are N-Channel enhancement mo de sil icon gate

power fiel d effect transistors desig ned fo r applicat ions such

as switching regulators , s witching converters, motor driver s,

relay dri ver s and drivers for high power bipolar s w itchi ng

transistors requiring high speed and low gate drive power.

These types can be ope rated dir ectly from i ntegrated

circuits.

Formerly deve lopmental ty pe TA05 22.

Features

• 15A, 50V

•r

DS(ON) = 0.140Ω

• Design Optimized for 5V Gate D rives

• Can be Driv en from QMOS, NMOS , TTL Ci rcuits

• Compatible with Autom oti ve Driv e Requirements

• SOA is Po wer Dissipation Limited

• Nanose cond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelin es fo r Sol deri ng Surface Mount

Components to PC Boards”

Symbol

Packaging

JEDEC T O-220AB

Ordering Information

PART NUMBER PACKAGE BRAND

RFP15N05L TO-220AB RFP15N05L

NOTE: When ordering, us e the entire part number.

SOURCE

DRAIN

GATE

DRAIN

(TAB)

Data S heet Janu ary 2004

Absolute Maximum Ratings TC = 25oC, U nless Otherw ise Spe c ifi ed

Parameter Ratings Units

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 50 V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 50 V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 15

40 A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±10 V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Above TC = 25oC, Derate Linearly. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60

0.48 W

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG -5 5 to 15 0 oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300

260

CAUT ION: Str esses ab ove those l is ted in “ Ab solute Max imum R atings” m ay ca use permanen t dam age t o the device. This i s a st ress onl y rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. TJ = 25oC to 125oC.

Electrical Speci fications TC = 25oC, U nless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Dr ain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 50 - - V

Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 7) 1 - 2 V

Z ero Gat e V ol tag e D rain C urr e nt IDSS VDS = 48V, VDS = 50V - - 1 µA

VDS = 48V, VDS = 50V TC = 125oC--50µA

Ga te t o Sour c e Le ak ag e C urr e nt I GSS VGS = ±10 V, VDS = 0V - - 100 nA

Drain to Source On Resistance (Note 2) rDS(ON) ID = 15A, VGS = 5V (Figures 5, 6) - - 0.140 Ω

Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz

(Fi gu r e 8) --900pF

Output Capacitance COSS --450pF

Re ve r s e-Tran s fer C ap ac itance CRSS --200pF

Turn-O n Delay Time td(ON) VDD = 30V, ID = 7.5A, RG = 6.25Ω

(Figure s 10, 11) -1640ns

Rise Time tr- 250 325 ns

Turn-O ff Delay Time td(OFF) - 200 325 ns

Fa ll Time tfVGS = 5V - 225 325 ns

Thermal Resistance Junction to Case RθJC --2.083

oC/W

Source to Drain Diode Specific ations

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drai n Diode Voltage (N ote 2) VSD ISD = 7.5A - - 1.4 V

Diode Reverse Recovery Time trr ISD = 4A, dISD/dt = 100A/µs-225-ns

NOTE:

2. Pulsed: pulse duration = ≤ 300µs maximu m, duty cycle = ≤ 2%.

3. Repititive rating: pulse width limited by maximum junction temperature.

RFP15N05L

Typical Performance Curves Unless Otherwise Specified

FIGURE 1. NORMALIZED P O WER DISSIPATION vs CASE

TEMPERATURE FIGURE 2. FORWARD BIAS SAFE OPERAT ING AREA

FIGURE 3. S ATURATION CHARACTERISTICS FIGURE 4. TRANSFER CHARA CTERISTICS

FIGURE 5. DRAIN T O SOURCE ON RESISTANCE vs DRAIN

CURRENT FIGURE 6. NORMALIZED DRAIN T O SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

0 50 100 150

TC, CASE TEMPERATURE (oC)

POWER DISSIPATION MULTIPLIER

0.2

0.4

0.6

0.8

1.0

1.2

1 10 100 1000

VDS, DRAIN SOURCE VOLTAG E (V)

100

ID, DRAIN CURRENT (A)

OPERATION IN

THIS AREA IS

LIMITED BY rDS(ON)

ID MAX CONTINUOUS

RFP15N06LRFP15N05L

DC OPERATION

CURVES MUST BE

DERATED LINEARLY

WITH INCREASE IN

TEMPERATURE

TC = 25oC

VGS = 10V

012345

VDS, DRAIN TO SOURCE VOLTAGE (V)

IDS, DRAIN TO SOURCE CURRENT (A)

PULSE DURATION = 80µs

DUTY CYCLE ≤ 0.5% MAX

TC = 25oCVGS = 7.5V

VGS = 3.5V

VGS = 3V

VGS = 5V

VGS = 4.5V

VGS = 4V

VGS = 2V

VGS = 2.5V

012345

VGS, GATE TO SOURCE VOLTAGE (V)

IDS, DRAIN TO SOURCE CURRENT

-40oC

125oC

25oC

VDS = 10V

PULSE DURATION = 80µs

DUTY CYCLE ≤ 0.5% MAX

125oC-40oC

0 2 4 6 8 10 12 14 16

ID, DRAIN TO SOURCE CURRENT (A)

rDS(ON), DRAIN TO SOURCE

ON RESISTANCE (Ω)

VGS = 5V

PULSE DURATION = 80µs

DUTY CYCLE ≤ 0.5% MAX

0.3

0.2

0.1

TC = 125oC

25oC

-40oC

VGS = 10V, ID = 15A

2.0

1.5

0.5

-50 0 50 100 150 200

TJ, JUNCTION TEMPERATURE (oC)

NORMALIZED DRAIN TO SOURCE

ON RESISTANCE

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

RFP15N05L

FIGURE 7. NORMALIZED GATE THRESHOLD V OLTAGE vs

JUNCTION TEMPERATURE FIGURE 8. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

NOTE: Refer to Fairchil d Applicati on Notes AN7 254 and AN7260.

FIGURE 9. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT

Test Circuits and Waveforms

FIGURE 10. SWITCHING TIME TEST CIRCUIT FIGURE 11. RESISTIVE SWITCHING WAVEFORMS

Typical Performance Curves Unless Otherwise Specified (Continued)

VGS = VDS

ID = 250µA

1.4

1.2

0.8

0.6

-50 0 50 100 150 200

TJ, JUNCTION TEMPERATURE (oC)

NORMALIZED GATE THRESHOLD

VOLTAGE

1600

1400

1200

1000

800

600

400

200

001020304050

VDS, DRAIN TO SOURCE VOLTAGE (V)

C, CAPACITANCE (pF)

CRSS

COSS

CISS

VGS = 0V, f = 1MHz

CISS = CGS + CGD

CRSS = CGD

COSS ≈ CDS + CGD

GATE SOURCE

VOLTAGE

RL = 4Ω

IG(REF) = 0.5mA

VGS = 5V

DRAIN SOURCE VOLTAGE

DRAIN TO SOURCE VOLTAGE (V)

GATE TO SOURCE VOLTAG E (V)

IG (REF)

IG (ACT)

20 IG (REF)

IG (ACT)

t, TIME (µs)

BVDSS

VDD = BVDSS VDD = BVDSS

0.75BVDSS

0.50BVDSS

0.25BVDSS

VGS

DUT

-VDD

tON

td(ON)

90%

10%

VDS 90%

10%

td(OFF)

tOFF

90%

50%50%

10% PULSE WIDTH

VGS

RFP15N05L

FIGURE 12. GATE CHARGE TEST CIRCUIT FIGURE 13. GATE CHARGE WAVEFORMS

Test Circuits and Waveforms (Continued)

VGS +

VDS

VDD

DUT

IG(REF)

VDD

Qg(TH)

VGS = 1V

Qg(5)

VGS = 5V

Qg(TOT)

VGS = 10V

VDS

VGS

IG(REF)

RFP15N05L

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY

ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT

CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

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not intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT ST A TUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

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First Production

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