VG101 Cellular-band Variable Gain Amplifier Applications * Xmit & Rcv AGC circuitry for mobile infrastructure GND Gain Ctrl GND GND GND GND 6 5 4 3 2 1 28 GND GND 9 27 GND GND 10 26 GND Amp RF IN 11 25 RF OUT GND 12 24 GND Variable Attenuator GND 13 23 GND GND 14 15 16 17 18 19 20 21 N/C MATCH Superior thermal design allows the product to have a minimum MTTF rating of 1000 years at a mounting temperature of +85 C. All devices are 100% RF & DC tested and packaged on tape and reel for automated surface-mount assembly. GND 22 GND GND The +22 dBm output compression point and +40 dBm output intercept point of the amplifier are maintained over the entire attenuation range, making the VG101 ideal for use in transmitter and receiver AGC circuits and as a variable gain stage following an LNA in high dynamic range receiver front ends. 7 GND 8 GND The VG101 is a cellular-band high dynamic range variable gain amplifier (VGA) packaged in a low profile Pb-free / RoHS-compliant surface-mount leadless package that measures 6 x 6 mm square. N/C 700 - 1000 MHz bandwidth 28 dB Attenuation Range +40 dBm Output IP3 +22 dBm P1dB Constant IP3 & P1dB over attenuation range * Single voltage supply * Pb-free 6mm 28-pin QFN package * MTTF > 1000 years Functional Diagram GND * * * * * Product Description GND Product Features Specifications (1) Parameter Operational Bandwidth Test Frequency Gain at min. attenuation Input Return Loss Output Return Loss Output P1dB Output IP3 Noise Figure at min. attenuation Gain Variation Range Gain Variation Control Voltage, VCTRL Group Delay Supply Voltage Operating Amplifier Current Range Gain Control Pin Current Units Min MHz MHz dB dB dB dBm dBm dB dB V ns V mA mA 700 15 +37 25.5 0 120 Typ Max Conditions 1000 900 16 12 14 +22 +40 3.5 28.7 1 +5 150 See note 1 33.5 4.5 180 20 See note 2 VCTRL = 0 V See note 3 See note 1 Frequency = 900 MHz Pin 25 VCTRL = 4.5 V. See note 1. 1. Test conditions unless otherwise noted: 25C, Vdd = +5 V in a tuned application circuit. Vctrl is the control voltage through a BJT transistor and a 100 dropping resistor as shown in the same application circuit. 2. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. The gain variation range is measured as the difference in gain with Vctrl = 0V and Vctrl = 4.5V at 0.9 GHz. Absolute Maximum Rating Parameter Operating Case Temperature Storage Temperature Amplifier Supply Voltage (pin 25) Pin 5 (Gain Control) Current RF Input Power (continuous) Junction Temperature Thermal Resistance, Rth (1) Rating -40 to +85 C -55 to +125 C +6 V 30 mA +12 dBm +160 C 59 C / W Operation of this device above any of these parameters may cause permanent damage. Ordering Information Part No. VG101-F VG101-PCB Description Cellular-band Variable Gain Amplifier (lead-free/RoHS-compliant QFN package) Fully Assembled Application Board Standard tape / reel size = 500 pieces on a 7 reel Specifications and information are subject to change without notice Page 1 of 4 August 2009 TriQuint Semiconductor, Inc * Phone +1-503-615-9000 * FAX: +1-503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com VG101 Cellular-band Variable Gain Amplifier Application Circuit: 700 - 1000 MHz (VG101-PCB) L4 5.6 nH C5 0.4 pF Circuit Board Material: .014" FR-4, 4 layers, .062" total thickness * The amplifier is biased through Pin 25 and should be connected directly into a voltage regulator. * Distances are shown from the edge-to-edge for the land pattern. Bill of Materials Ref. Des. C1, C3 C2, C4 C5 L1 L2 L3 L4 R1 R3 R4 R5 Value 47 pF 0.018 uF 0.4 pF 82 nH 39 nH 2.7 nH 5.6 nH 100 2.7 4.7 47 Q1 U1 OIP3 vs. Output Power frequency = 900, 910 MHz, 25C, 10 dBm/tone 45 40 MMBT2222A TriQuint 880 MHz, IS-95, 9 Ch. Forward, 885 kHz offset, 30 kHz Meas BW, 25C -40 40 35 Manufacturer various various various Coilcraft Coilcraft various Coilcraft various various various various ACPR vs. Channel Power OIP3 vs. Attenuation Setting frequency = 900, 910 MHz, 0dB Atten. 45 VG101-F Description Chip, 0603, 50V, 5%, NPO Chip, 0603, 50V, 5%, X7R Chip, 0603, 50V, 1% Coil Wire-wound, 0603, 5% Coil Wire-wound, 0603, 5% Multilayer, 0603, +/-0.3 nH Ceramic core, 0603, 5% Chip, 0603, 5%, 1/16W Chip, 0603, 5%, 1/16W Chip, 0603, 5%, 1/16W Chip, 0603, 5%, 1/16W NPN General Purpose Transistor Variable Gain Amplifier, QFN 6x6 -50 35 0dB Attn -60 30 5dB Attn 30 +25C -40C 10dB Attn +85C 25 -70 25 -4 0 4 8 Output Power (dBm) 12 16 0 2 4 6 Attenuation (dB) 8 10 12 13 14 15 16 Output Channel Power (dBm) Specifications and information are subject to change without notice Page 2 of 4 August 2009 TriQuint Semiconductor, Inc * Phone +1-503-615-9000 * FAX: +1-503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com VG101 Cellular-band Variable Gain Amplifier VG101-PCB Application Circuit Performance (cont'd) Gain vs. Pin 5 Attn. Control Current Noise Figure vs. Frequency Normalized Gain vs. Pin 5 Control Current 20 Vctrl=0V (Minimum attenuation) 40 15 -40C +85C +25C 35 10 30 5 25 0 20 -5 15 -10 10 -15 5 -20 -40C 10 +85C 5 10 15 20 25 0.1 Pin 5 Attenuation Control Current (mA) 1.0 4 10.0 0 700 100.0 750 800 S22 S11, S22 (dB) S21 (dB) 1000 Vctrl=0V (Minimum attenuation) S11 -5 13 950 26 16 14 900 P1dB vs. Frequency o Vctrl = 0V ( Minimum Attenuation) , +25 C 0 15 850 Frequency (MHz) S11, S22 vs. Frequency Gain vs. Frequency o +85C 6 Pin 5 Attenuation Control Current (mA) Vctrl = 0V ( Minimum Attenuation) , +25 C +25C 2 0 0 -40C 8 N F (d B ) +25C 24 -10 22 -15 20 -20 18 12 -40C -25 11 0.7 0.7 0.75 0.8 0.85 0.9 Frequency (GHz) 0.95 0.75 0.8 0.85 0.9 0.95 Frequency (GHz) 1 +25C +85C 16 1 850 875 900 925 950 Frequency (MHz) S11 vs. Frequency vs. Control Voltage S21 vs. Frequency vs. Control Voltage 20 S22 vs. Frequency vs. Control Voltage 0 0 -5 -5 0 -10 -10 S22 (dB) S11 (dB) S21 (dB) 10 -15 -20 0.7 0.75 0.8 0.85 0.9 Frequency (GHz) 0.95 -25 0.7 1 0.75 4 2.0 3 1.5 2 1.0 Vctrl vs Ictrl 0.5 V5 vs Ictrl 0 0.0 5 10 Ictrl (mA) 15 0.95 1 0.7 0.75 20 0.0 0.5 1.0 1.5 Vpin5 (V) 2.0 0.8 0.85 0.9 Frequency (GHz) 0.95 1 Ictrl vs. Vctrl 18 16 14 12 10 8 6 4 2 0 Ic trl (m A ) 2.5 V p in 5 (V ) 5 Ic trl (m A ) V c trl (V ) 3.0 0 0.8 0.85 0.9 Frequency (GHz) Ictrl vs. Vpin5 Vctrl, Vpin5 vs. Ictrl 6 1 -15 -20 -25 -20 -10 2.5 3.0 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 Vctrl (V) Specifications and information are subject to change without notice Page 3 of 4 August 2009 TriQuint Semiconductor, Inc * Phone +1-503-615-9000 * FAX: +1-503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com VG101 Cellular-band Variable Gain Amplifier VG101-F Mechanical Information This package is lead-free/RoHS-compliant. The plating material on the pins is annealed matte tin over copper. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes. Outline Drawing YYWWAaXXXX Product Marking The component will be lasermarked with a "VG101F" designator followed by 10-digit numeric lot code. The "YY" represents the last digit of the year the part was manufactured, "WW" represents the workweek, the "Aa" is vendor code and "XXXX" is an auto-generated number. Tape and reel specifications for this part will be located on the website in the "Application Notes" section. ESD / MSL Information Mounting Configuration / Land Pattern ESD Rating: Value: Test: Standard: Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes 1000V to <2000V Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Level 2 at +260C convection reflow Standard: JEDEC Standard J-STD-020 GND 5 GND Gain Ctrl 6 GND GND 7 GND N/C Functional Pin Layout 4 3 2 1 GND 8 28 GND GND 9 27 GND GND 10 26 GND Amp RF IN 11 25 RF OUT GND 12 24 GND Variable Attenuator GND 13 23 GND GND 14 17 18 19 GND GND GND N/C Function Gain Control No Connect RF Input Interstage Match RF Output / DC bias Ground 20 21 GND 16 MATCH 15 GND 22 GND Pin No 5 7, 19 11 21 25 All other pins Backside copper The even numbered pins are hard grounded to the backside paddle internally. Specifications and information are subject to change without notice Page 4 of 4 August 2009 TriQuint Semiconductor, Inc * Phone +1-503-615-9000 * FAX: +1-503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com