Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 1 of 4 August 2009
VG101
Cellular-band Variable Gain Amplifier
Product Features
• 700 – 1000 MHz band wi dth
• 28 dB Attenuation Range
• +40 dBm Output IP3
• +22 dBm P1dB
• Constant IP3 & P1dB over
attenuation rang e
• Single voltage su pply
• Pb-free 6mm 28-pin QFN package
• MTTF > 1000 years
Applications
• Xmit & Rcv AGC circuitry for
mobile infrastructure
Product Description
The VG101 is a cellular-band high dynamic range
variable gain amplifier (VGA) packaged in a low
profile Pb-free / RoHS-compliant surface-mount
leadless package that measures 6 x 6 mm square.
The +22 dBm output compression point and +40
dBm output intercept point of the amplifier are
maintained over the entire attenuation range, making
the VG101 ideal for use in transmitter and receiver
AGC circuits and as a variable gain stage following
an LNA in high dynamic range receiver front ends.
Superior thermal design allows the product to have a
minimum MTTF rating of 1000 years at a mounting
temperature of +85 ºC. All devices are 100% RF &
DC tested and packaged on tape and reel for
automated surface-mount assembly.
Functional Diagram
Specifications (1)
Parameter Units Min Typ Max Conditions
Operational Bandwidth MHz 700 1000
Test Frequency MHz 900 See note 1
Gain at min. attenuation dB 15 16
Input Return Loss dB 12
Output Return Loss dB 14
Output P1dB dBm +22
Output IP3 dBm +37 +40 See note 2
Noise Figure at min. attenuation dB 3.5 VCTRL = 0 V
Gain Variation Range dB 25.5 28.7 33.5 See note 3
Gain Variation Control Voltage, VCTRL V 0 4.5 See note 1
Group Delay ns 1 Frequency = 900 MHz
Supply Voltage V +5
Operating Amplifier Current Range mA 120 150 180 Pin 25
Gain Control Pin Current mA 20 VCTRL = 4.5 V. See note 1.
1. Test conditions unless otherwise noted: 25ºC, Vdd = +5 V in a tuned application circuit. Vctrl is the control voltage through a BJT transistor and a 100 Ω dropping res istor as show n in the sa me a ppl ica tio n circu it.
2. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. The gain variation range is measured as the difference in gain with Vctrl = 0V and Vctrl = 4.5V at 0.9 GHz.
Absolute Maximum Rating
Parameter Rating
Operating Case Temperature -40 to +85 °C
Storage Temperature -55 to +125 °C
Amplifier Supply Voltage (pin 25) +6 V
Pin 5 (Gain Control) Current 30 mA
RF Input Power (continuous) +12 dBm
Junction Temperature +160 °C
Thermal Resistance, Rth (1) 59 °C / W
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No. Description
VG101-F Cellular-band Variable Gain Amplifier
(lead-free/RoHS-compliant QFN package)
VG101-PCB Fully Assembled Application Board
Standard tape / reel size = 500 pieces on a 7″ reel
N/C
GND
Gain Ctrl
GND
GND
GND
GND
8
9
10
11
12
13
14
28
27
26
25
24
23
22
7 6 5 43 2 1
15
16 17 18 19 20 21
GND
GND
GND
RF OUT
GND
GND
GND
GND
GND
GND
RF IN
GND
GND
GND
GND
GND
GND
GND
N/C
GND
MATCH
Variable
A
ttenuato
r
mp
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 2 of 4 August 2009
VG101
Cellular-band Variable Gain Amplifier
Application Circuit: 700 – 1000 MHz (VG101-PCB)
Bill of Materials
Ref.
Des. Value Description Manufacturer
C1, C3 47 pF Chip, 0603, 50V, 5%, NPO various
C2, C4 0.018 uF Chip, 0603, 50V, 5% , X7R various
C5 0.4 pF Chip, 0603, 50V , 1% various
L1 82 nH Coil Wire-wound, 0603, 5% Coilcraft
L2 39 nH Coil Wire-wound, 0603, 5% Coilcraft
L3 2.7 nH Multilayer, 0603, +/-0.3 nH various
L4 5.6 nH Ceramic core, 0603, 5% Coilcraft
R1 100
Ω
Chip, 0603, 5%, 1/16W various
R3 2.7
Ω
Chip, 0603, 5%, 1/16W various
R4 4.7
Ω
Chip, 0603, 5%, 1/16W various
R5 47
Ω
Chip, 0603, 5%, 1/16W various
Q1 NPN General Purpose
Transistor MMBT2222A
U1 VG101-F Variable Gain Amplifier,
QFN 6x6 TriQuint
OIP3 vs. Output Power
frequency = 900, 910 MHz, 0dB Atten.
25
30
35
40
45
-40481216
Output Power (dBm)
+25C -40C +85C
OIP3 vs. Attenuation Setting
frequency = 900, 910 MHz, 25C, 10 dBm/tone
25
30
35
40
45
0246810
Attenuation (dB)
ACPR vs. Channel Power
880 MHz, IS-95, 9 Ch. Forward, ±885 kHz offset, 30 kHz Mea s BW, 25° C
-70
-60
-50
-40
12 13 14 15 16
Output Channel Power (dBm)
0dB Attn
5dB Attn
10dB Attn
L4
5.6 nH
C5
0.4 pF
Circuit Boar d Material: .014” FR-4, 4 layers, . 062” total thickness
• The amplifier is biased through Pin 25 and should be connected
directly into a voltage regulator.
• Distances are shown from the edge-to-edge for the land pattern.
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 3 of 4 August 2009
VG101
Cellular-band Variable Gain Amplifier
VG101-PCB Application Circuit Performance (cont’d)
Gain vs. Pin 5 Attn. Control Current
-20
-15
-10
-5
0
5
10
15
20
0 5 10 15 20 25
Pin 5 Attenuation Control Current (mA)
+25°C -40°C +85°C
Normalized Gain vs. Pin 5 Control Current
0
5
10
15
20
25
30
35
40
0.1 1.0 10.0 100.0
Pin 5 Attenuation Control Current (mA)
+25°C -40°C +85°C
Noise Figure vs. Frequency
Vctrl=0V (Minimum attenuation)
0
2
4
6
8
10
700 750 800 850 900 950 1000
Frequency (MHz)
NF
(
dB
)
-40°C +25°C +85°C
Vctrl, Vpin5 vs. Ictrl
0
1
2
3
4
5
6
0 5 10 15 20
Ictrl (mA)
Vctrl
(
V
)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Vpin5 (V)
Vctrl vs Ictrl
V5 vs Ictrl
Ictrl vs. Vpin5
0
2
4
6
8
10
12
14
16
18
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Vpin5 (V)
Ic t rl (mA)
Ictrl vs. Vctrl
0
2
4
6
8
10
12
14
16
18
012345
Vctrl (V)
Ic t rl (mA)
Gain vs. Frequency
Vctrl = 0V ( Minimum Attenuation) , +25
o
C
11
12
13
14
15
16
0.7 0.75 0.8 0.85 0.9 0.95 1
Frequency (GHz)
S21 (dB)
S11, S22 vs. Frequency
Vctrl = 0V ( Minimum Attenuation) , +25
o
C
-25
-20
-15
-10
-5
0
0.70.750.80.850.90.95 1
Frequenc y (GHz)
S11, S22 (dB)
S22 S11
P1dB vs. Freque ncy
Vctrl=0V (Minimum attenuat ion)
16
18
20
22
24
26
850 875 900 925 950
Frequency (MHz)
-40°C +25°C +85°C
S21 vs. Frequency vs. Control Voltage
-20
-10
0
10
20
0.7 0.75 0.8 0.85 0.9 0.95 1
Frequency (GHz)
S21 (dB)
S11 vs. Frequency vs. Control Voltage
-25
-20
-15
-10
-5
0
0.7 0.75 0.8 0.85 0.9 0.95 1
Frequency (GHz)
S11 (dB)
S22 vs. Frequency vs. Control Voltage
-25
-20
-15
-10
-5
0
0.70.750.80.850.90.95 1
Frequency (GHz)
S22 (dB)
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone +1-503-615-9000 • FAX: +1-503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 4 of 4 August 2009
VG101
Cellular-band Variable Gain Amplifier
VG101-F Mechanical Information
This package is lead-free/RoHS-compliant. The plating material on the pins is annealed matte tin over copper. It is compatible with both
lead-free (maximum 260 °C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes.
Outline Drawing
Mounting Configuration / Land Pattern
Product Marking
The component will be lasermarked with a
“VG101F” designator followed by 10-digit
numeric lot code. The “YY” represents the last
digit of the year the part was manufactured,
“WW” represents the workweek, the “Aa” is
vendor code and “XXXX” is an auto-generated
number.
Tape and reel specifications for this part will be
located on the website in the “Application
Notes” section.
ESD / MSL Information
ESD Rating: Class 1B
Value: Passes 500V to <1000V
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
ESD Rating: Class IV
Value: Passes 1000V to <2000V
Test: Charged Device Model (CDM)
Standard: JEDEC Standard JESD22-C101
MSL Rating: Level 2 at +260°C convection reflow
Standard: JEDEC Standard J-STD-020
Functional Pin Layout
Function Pin No
Gain Control 5
No Connect 7, 19
RF Input 11
Interstage Match 21
RF Output / DC bias 25
Ground All other pins
Backside copper
The even numbered pins are hard grounded
to the backside paddle internally.
N/C
GND
Gain Ctrl
GND
GND
GND
GND
8
9
10
11
12
13
14
28
27
26
25
24
23
22
7 6 5 4 3 2 1
15
16 17 18 19 20 21
GND
GND
GND
RF OUT
GND
GND
GND
GND
GND
GND
RF IN
GND
GND
GND
GND
GND
GND
GND
N/C
GND
MATCH
Variable
A
ttenuato
r
Amp
YYWWAaXXXX