SOT23 PNP SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 3 - JULY 1995
PARTMARKING DETAILS BCW29 - C1
BCW30 - C2
BCW29R - C4
BCW30R - C5
COMPLEMENTARY TYPES BCW29 - BCW31
BCW30 - BCW32
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -30 V
Collector-Emitter Voltage VCEO -30 V
Emitter-Base Voltage VEBO -20 V
Peak Pulse Current ICM -5 A
Continuous Collector Current IC-100 A
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature
Range
Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Base - Emitter Voltage VBE -600 -750 mV IC=-2mA, VCE
=- 5V
Collector-Emitter Saturation
Voltage
VCE(SAT) -80
-150
250 mV
mV
IC=-10mA, IB = - 0.5mA
IC=-50mA, IB =-2.5mA
Base-Emitter Saturation
Voltage
VBE(SAT) -720
-810
mV
mV
IC=-10mA, IB=-0.5mA
IC =-50mA, IB=-2.5mA
Collector- Base Cut-Off
Current
ICBO -100
-10
nA
µA
IE=0, VCB
=-20V
IE=0,VCB=-20V,
Tj =100oC
Static Forward
Current
Transfer
Ratio
BCW29 hFE 120
90
260
IC=-10µA, VCE
=-5V
IC=-2mA, VCE
=-5V
BCW30 hFE 215
150
500
IC=-10µA, VCE
=-5V
IC=-2mA, VCE
=-5V
Transition Frequency fT150 MHz IC=-10mA, VCE
=-5V
f = 35MHz
Collector Capacitance CTC 7pFI
E =Ie =0, VCB
=-10V
f= 1MHz
Noise Figure N 10 dB IC= -200mA, VCE =-5V
RS =2KΩ, f=1KHz
B= 200Hz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
BCW29
BCW30
C
B
E
SOT23
