Order this document by 2N4918/D SEMICONDUCTOR TECHNICAL DATA ! . . . designed for driver circuits, switching, and amplifier applications. These high-performance plastic devices feature: *Motorola Preferred Device * Low Saturation Voltage -- VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp * Excellent Power Dissipation Due to Thermopad Construction -- PD = 30 W @ TC = 25_C * Excellent Safe Operating Area * Gain Specified to IC = 1.0 Amp * Complement to NPN 2N4921, 2N4922, 2N4923 3 AMPERE GENERAL-PURPOSE POWER TRANSISTORS 40 - 80 VOLTS 30 WATTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIII III IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIII III IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIII IIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII *MAXIMUM RATINGS Ratings Symbol 2N4918 2N4919 2N4920 Unit VCEO 40 60 80 Vdc Collector-Base Voltage VCB 40 60 80 Vdc Emitter-Base Voltage VEB 5.0 Vdc Collector Current -- Continuous (1) IC* 1.0 3.0 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TC = 25C Derate above 25_C PD 30 0.24 Watts W/_C TJ, Tstg - 65 to + 150 _C Collector-Emitter Voltage Operating & Storage Junction Temperature Range CASE 77-08 TO-225AA TYPE THERMAL CHARACTERISTICS (2) Characteristic Symbol Max Unit JC 4.16 _C/W Thermal Resistance, Junction to Case * Indicates JEDEC Registered Data for 2N4918 Series. (1) The 1.0 Amp maximum IC value is based upon JEDEC current gain requirements. The 3.0 Amp maximum value is based upon actual current-handling capability of the device (See Figure 5). (2) Recommend use of thermal compound for lowest thermal resistance. PD, POWER DISSIPATION (WATTS) 40 30 20 10 0 25 50 75 100 TC, CASE TEMPERATURE (C) 125 150 Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 7 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III [ [ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 40 60 80 -- -- -- -- -- -- 0.5 0.5 0.5 -- -- 0.1 0.5 Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IC = 0.1 Adc, IB = 0) VCEO(sus) 2N4918 2N4919 2N4920 Collector Cutoff Current (VCE = 20 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) Vdc ICEO 2N4918 2N4919 2N4920 mAdc Collector Cutoff Current (VCE = Rated VCEO, VBE(off) = 1.5 Vdc) (VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 125_C) ICEX mAdc Collector Cutoff Current (VCB = Rated VCB, IE = 0) ICBO -- 0.1 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO -- 1.0 mAdc 40 30 10 -- 150 -- ON CHARACTERISTICS DC Current Gain (1) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (1) (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) -- 0.6 Vdc Base-Emitter Saturation Voltage (1) (IC = 1.0 Adc, IB = 0.1 Adc) VBE(sat) -- 1.3 Vdc Base-Emitter On Voltage (1) (IC = 1.0 Adc, VCE = 1.0 Vdc) VBE(on) -- 1.3 Vdc fT 3.0 -- MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz) Cob -- 100 pF Small-Signal Current Gain (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 25 -- -- SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) * Indicates JEDEC Registered Data. (1) Pulse Test: PW 300 s, Duty Cycle VBE(off) 0 Vin 5.0 VCC Vin t1 RC RB t2 Vin APPROX -11 V 0 t3 TURN-OFF PULSE t1 < 15 ns 100 < t2 < 500 s t3 < 15 ns DUTY CYCLE 2.0% 2.0 + 4.0 V RB and RC varied to obtain desired current levels Figure 2. Switching Time Equivalent Test Circuit 2 IC/IB = 10, UNLESS NOTED TJ = 25C TJ = 150C SCOPE Cjd << Ceb APPROX 9.0 V VCC = 30 V IC/IB = 20 3.0 t, TIME ( s) APPROX -11 V 2.0% 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 VCC = 30 V tr VCC = 60 V td VCC = 30 V VBE(off) = 0 10 20 30 VCC = 60 V VBE(off) = 2.0 V 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1000 Figure 3. Turn-On Time Motorola Bipolar Power Transistor Device Data r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.03 P(pk) JC(t) = r(t) JC JC = 4.16C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) JC(t) DUTY CYCLE, D = t1/t2 0.05 0.1 0.07 0.05 0.01 SINGLE PULSE 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 50 100 200 300 500 1000 Figure 4. Thermal Response IC, COLLECTOR CURRENT (AMP) 10 100 s 1.0 ms 5.0 ms 5.0 TJ = 150C 2.0 dc 1.0 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMIT @ TC = 25C 0.5 v PULSE CURVES APPLY BELOW RATED VCEO 0.2 0.1 1.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - V CE operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 2.0 3.0 5.0 7.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 5. Active-Region Safe Operating Area 5.0 5.0 IC/IB = 20 3.0 1.0 IC/IB = 10 0.7 0.5 ts = ts - 1/8 tf 0.3 0.2 0.1 0.07 0.05 IC/IB = 20 2.0 TJ = 25C TJ = 150C IB1 = IB2 10 20 30 200 300 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 6. Storage Time Motorola Bipolar Power Transistor Device Data 500 700 1000 t f , FALL TIME ( s) t s , STORAGE TIME ( s) 3.0 2.0 TJ = 25C TJ = 150C VCC = 30 V IB1 = IB2 1.0 0.7 0.5 IC/IB = 10 0.3 0.2 0.1 0.07 0.05 10 20 30 200 300 50 70 100 IC, COLLECTOR CURRENT (mA) 500 700 1000 Figure 7. Fall Time 3 hFE, DC CURRENT GAIN 1000 700 500 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL DC CHARACTERISTICS VCE = 1.0 V TJ = 150C 300 200 25C 100 70 50 - 55C 30 20 10 2.0 3.0 5.0 10 20 30 50 100 200 300 500 IC, COLLECTOR CURRENT (mA) 1000 2000 1.0 IC = 0.1 A 108 TJ = 25C 0.4 0.2 0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IB, BASE CURRENT (mA) 100 50 200 1.5 VCE = 30 V IC = 10 ICES 107 1.2 106 VOLTAGE (VOLTS) RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) 1.0 A Figure 9. Collector Saturation Region IC ICES 105 IC = 2x ICES ICES VALUES OBTAINED FROM FIGURE 13 104 TJ = 25C 0.9 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 2.0 V 0.3 VCE(sat) @ IC/IB = 10 103 0 30 60 90 120 0 2.0 3.0 5.0 150 10 20 30 50 100 200 300 500 1000 2000 TJ, JUNCTION TEMPERATURE (C) IC, COLLECTOR CURRENT (mA) Figure 10. Effects of Base-Emitter Resistance Figure 11. "On" Voltage 102 + 2.5 TEMPERATURE COEFFICIENTS (mV/ C) IC, COLLECTOR CURRENT ( A) 0.5 A 0.6 Figure 8. Current Gain 101 TJ = 150C 100 10-1 100C 10- 2 IC = ICES VCE = 30 V 104 REVERSE 103 - 0.2 - 0.1 4 0.25 A 0.8 25C FORWARD 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 2.0 *APPLIES FOR IC/IB < + 1.5 + 1.0 hFE @ VCE 2 + 1.0 V TJ = 100C to 150C + 0.5 *VC FOR VCE(sat) 0 TJ = - 55C to +100C - 0.5 - 1.0 - 1.5 VB FOR VBE - 2.0 - 2.5 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000 VBE, BASE-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 12. Collector Cut-Off Region Figure 13. Temperature Coefficients Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS -B- U F Q -A- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M DIM A B C D F G H J K M Q R S U V 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 --- STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77-08 TO-225AA TYPE ISSUE V Motorola Bipolar Power Transistor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. 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