Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
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Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but th ere is always the possibility that trouble may occur with them. Trouble with
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Remember to give due consideration to safety when making your circuit designs, with appropriate
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Notes regar ding these materials
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2SK3446
Silicon N Channel Power MOS FET
Power Switching
ADE-208-1566F (Z)
7th. Edition
Jan. 2003
Features
• Capable of 2.5 V gate drive
• Low drive current
• Low on-resistance
• RDS(on)=1.5 Ω typ. (at VGS = 4 V)
Outline
TO-92MOD.
1. Source
2. Drain
3. Gate
321
D
G
S
2SK3446
Rev.6, Jan. 2003, page 2 of 10
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 150 V
Gate to source voltage VGSS ±10 V
Drain current ID 1 A
Drain peak current ID(pulse)
Note1 4 A
Body-drain diode reverse drain current IDR 1 A
Channel dissipation Pch Note2 0.9 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Ta = 25°C
2SK3446
Rev.6, Jan. 2003, page 3 of 10
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 150 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±10 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±8 V, VDS = 0
Zero gate voltage drain current IDSS — — 1 µA VDS = 150 V, VGS = 0
Gate to source cutoff voltage VGS(off) 0.5 — 1.5 V VDS = 10 V, I D = 1 mA
Static drain to source on state RDS(on) — 1.5 1.95 Ω I
D = 0.5 A, VGS = 4 V Note3
resistance RDS(on) — 1.9 2.5 Ω I
D = 0.5 A, VGS = 2.5 V Note3
Forward transfer admittance |yfs| 0.8 1.4 — S ID = 0.5 A, VDS = 10 V Note3
Input capacitance Ciss — 98 — pF VDS = 10 V
Output capacitance Coss — 31 — pF VGS = 0
Reverse transfer capacitance Crss — 14 — pF f = 1 MHz
Total gate charge Qg — 3.5 — nC VDD = 100 V
Gate to source charge Qgs — 0.5 — nC VGS = 4 V
Gate to drain charge Qgd — 1.8 — nC ID = 1 A
Turn-on delay time td(on) — 8 — ns VGS = 4 V, ID = 0.5 A
Rise time tr — 12 — ns RL = 60 Ω
Turn-off delay time td(off) — 34 — ns
Fall time tf — 19 — ns
Body–drain diode forward voltage VDF — 1.0 1.5 V IF = 1 A, VGS = 0 Note3
Body–drain diode reverse recovery
time
trr — 60 — ns IF = 1 A, VGS = 0
diF/ dt =100 A/µs
Notes: 3. Pulse test
2SK3446
Rev.6, Jan. 2003, page 4 of 10
Main Characteristics
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain current I (A)
D
Typical Transfer Characteristics
0.003
0.001
10
3
1
0.3
0.1
0.03
0.01
0.1 0.3 1 3 10 30 100 500
100 µs
10 µs
1 ms
Ta = 25°C
2.5
0.5
1
1.5
2
02468
10
2.5 V
2 V
V
GS
= 1.5 V
3 V
Pulse Test
5
4
3
2
1
0246810
Tc = -25°C
25°C
75°C
V = 10 V
Pulse Test
DS
Operation in
this area is
limited by R
DS(on)
4 V
1.6
1.2
0.8
0.4
050 100 150 200
Channel Dissipation Pch (W)
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
DC Operation
PW = 10 ms (1shot)
2SK3446
Rev.6, Jan. 2003, page 5 of 10
Drain Current I (A)
D
Drain to Source on State Resistance
R
DS(on)
(Ω)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Static Drain to Source on State Resistanc
e
vs. Drain Current
Case Temperature Tc (°C)
Static Drain to Source on State Resistance
vs. Temperature
0.1 1 10
0.3 3
10
2
5
1
0.2
0.1
0.5
V = 2.5 V
GS
Pulse Test
4 V
5
4
3
2
1
–25 0 25 50 75 100 125 150
0
I
D
= 1 A
0.5 A
0.2 A
V
GS
= 2.5 V
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
3
2
1
0
204
68
10
0.5 A
0.2 A
V (V)
DS(on)
Drain to Source Saturation Voltage
Pulse Test
I = 1 A
D
Forward Transfer Admittance |yfs| (S)
Drain Current I (A)
D
Forward Transfer Admittance vs.
Drain Current
0.01 0.03 0.1 0.3 1 3 10
10
1
3
0.3
0.03
0.1
0.01
DS
V = 10 V
Pulse Test
25°C
Tc = -25°C
75°C
0.5 A
0.2 A
Pulse Test
V
GS
= 4 V
I = 1 A
D
2SK3446
Rev.6, Jan. 2003, page 6 of 10
Capacitance C (pF)
Drain Source Voltage V (V)
DS
Typical Capacitance vs.
Drain Source Voltage
Gate Charge Qg (nC)
Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
01020304050
1000
100
300
10
3
1
30
V = 0
f = 1 MHz
GS
Ciss
Coss
Crss
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
Body-Drain Diode Reverse
Recovery Time
0.1 0.3 1 3 10
1000
100
30
1
10
3
300
di / dt = 100 A / µs
V = 0, Ta = 25°C
GS
160
120
80
40
0
8
6
4
2
246810
0
V
GS
V
DS
I = 1 A
D
V
DD
= 100 V
50 V
25 V
V
DD
= 100 V
50 V
25 V
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
30
100
3
10
1
0.1 0.3 1 3 10
V = 4 V, V = 30 V
PW = 5 µs, duty < 1 %
GS DD
tf
r
t
d(on)
t
d(off)
t
2SK3446
Rev.6, Jan. 2003, page 7 of 10
Source to Drain Voltage V (V)
SDF
Reverse Drain Current I (A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
4
3
2
1
012
V = 0, −5 V
GS
5 V
Pulse Test
D = 1
0.5
0.05
0.2
0.1
0.01
1shot pulse
10 µ100 µ1 m 10 m 100 m 1 10 100 1000 10000
10
1
0.1
0.01
Pulse Width PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
γ
DM
P
PW
T
D = PW
T
θch - a(t) = γs (t) • θch - a
θch - a = 139°C/W, Ta = 25°C
Gate to Source Voltage V
GS
(V)
Case Temperature Tc (°C)
Gate to Source Voltage vs. Temperature
1.5
1.0
0.5
–25 0 25 50 75 100 125 150
0
I
D
= 10 mA
0.1 mA
1 mA
V
DS
= 10 V
Pulse Test
0.02
2SK3446
Rev.6, Jan. 2003, page 8 of 10
Vin Monitor
D.U.T.
Vin
4 V
RL
V
= 30 V
DD
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
50 Ω
90%
10%
tf
Switching Time Test Circuit Waveform
2SK3446
Rev.6, Jan. 2003, page 9 of 10
Package Dimensions
0.60 Max
0.55 Max
4.8 ± 0.4 3.8 ± 0.4
8.0 ± 0.5
0.7
2.3 Max
10.1 Min
0.5 Max
1.27
2.54
0.65 ± 0.1
0.75 Max
Hitachi Code
JEDEC
JEITA
Mass
(reference value)
TO-92 Mod
—
Conforms
0.35 g
As of July, 2002
Unit: mm
2SK3446
Rev.6, Jan. 2003, page 10 of 10
Disclaimer
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copyright, trademark, or other intellectual property rights for information contained in this document.
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
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5. This product is not designed to be radiation resistant.
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