PIN3
COLLECTOR
(OUTPUT)
PIN2
EMITTER
(GROUND)
PIN1
BASE
(INPUT)
R1
R2
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base–emitter resistor . The BRT eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC–70/SOT–323 package which
is designed for low power surface mount applications.
•Simplifies Circuit Design
•Reduces Board Space
•Reduces Component Count
•The SC–70/SOT–323 package can be soldered using
wave or reflow. The modified gull–winged leads absorb
thermal stress during soldering eliminating the possibility
of damage to the die.
•Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order
the 13 inch/10,000 unit reel.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector–Base Voltage VCBO 50 Vdc
Collector–Emitter V oltage VCEO 50 Vdc
Collector Current IC100 mAdc
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°CPD*150
1.2 mW
mW/°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Ambient (surface mounted) RθJA 833 °C/W
Operating and Storage Temperature Range TJ, Tstg –65 to +150 °C
Maximum Temperature for Soldering Purposes,
T ime in Solder Bath TL260
10 °C
Sec
DEVICE MARKING AND RESISTOR VALUES
Device Marking R1 (K) R2 (K)
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1(2)
6A
6B
6C
6D
6E
10
22
47
10
10
10
22
47
47
∞
MUN5116T1(2)
MUN5130T1(2)
MUN5131T1(2)
MUN5132T1(2)
MUN5133T1(2)
MUN5134T1(2)
6F
6G
6H
6J
6K
6L
4.7
1.0
2.2
4.7
4.7
22
∞
1.0
2.2
4.7
47
47
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MUN5111T1/D
SEMICONDUCTOR TECHNICAL DATA
PNP SILICON
BIAS RESISTOR
TRANSISTOR
Motorola Preferred Devices
CASE 419–02, STYLE 3
SC–70/SOT–323
12
3
Motorola, Inc. 1996
REV 2
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Base Cutof f Current (VCB = 50 V, IE = 0) ICBO — — 100 nAdc
Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO — — 500 nAdc
Emitter–Base Cutoff Current MUN511 1T1
(VEB = 6.0 V, IC = 0) MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
IEBO —
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
mAdc
Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0) V(BR)CBO 50 — — Vdc
Collector–Emitter Breakdown Voltage (3) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 — — Vdc
ON CHARACTERISTICS(3)
DC Current Gain MUN5111T1
(VCE = 10 V, IC = 5.0 mA) MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
hFE 35
60
80
80
160
160
3.0
8.0
15
80
80
60
100
140
140
250
250
5.0
15
27
140
130
—
—
—
—
—
—
—
—
—
—
—
Collector–Emitter Saturation V oltage (IC = 10 mA, IE = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MUN5130T1/MUN5131T1
(IC = 10 mA, IB = 1 mA) MUN5115T1/MUN5116T1/
MUN5132T1/MUN5133T1/MUN5134T1
VCE(sat) — — 0.25 Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) MUN5111T1
MUN5112T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ) MUN5113T1
VOL —
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
Output Voltage (of f) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ) MUN5130T1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) MUN5115T1
MUN5116T1
MUN5131T1
MUN5132T1
VOH 4.9 — — Vdc
Input Resistor MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
R1 7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
kΩ
Resistor Ratio MUN5111T1/MUN5112T1/MUN5113T1
MUN5114T1
MUN5115T1/MUN5116T1
MUN5130T1/MUN5131T1/MUN5132T1
MUN5133T1
MUN5134T1
R1/R20.8
0.17
—
0.8
0.055
0.38
1.0
0.21
—
1.0
0.1
0.47
1.2
0.25
—
1.2
0.185
0.56
Figure 1. Derating Curve
250
200
150
100
50
0
–50 0 50 100 150
TA, AMBIENT TEMPERATURE (
°
C)
PD, POWER DISSIPATION (MILLIWATTS)
R
θ
JA = 833
°
C/W
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5111T1
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 2. VCE(sat) versus IC
100
10
1
0.1
0.01
0.001 0Vin, INPUT VOLTAGE (VOLTS)
TA= –25
°
C
25
°
C
12345678910
Figure 3. DC Current Gain
Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage
Figure 6. Input Voltage versus Output Current
0.01 20
IC, COLLECTOR CURRENT (mA)
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS)
0.1
1
040
50
1000
1 10 100
IC, COLLECTOR CURRENT (mA)
TA=75
°
C
–25
°
C
100
10
0IC, COLLECTOR CURRENT (mA)
0.1
1
10
100
10 20 30 40 50
TA= –25
°
C
25
°
C
75
°
C
75
°
C
IC/IB = 10
50
010203040
4
3
1
2
V
R
, REVERSE BIAS VOLT AGE (VOLTS)
Cob, CAPACITANCE (pF)
0
TA= –25
°
C
25
°
C
75
°
C
25
°
C
VCE = 10 V
f = 1 MHz
lE = 0 V
TA = 25
°
C
VO = 5 V
VO = 0.2 V
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5112T1
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 7. VCE(sat) versus ICFigure 8. DC Current Gain
1000
10
IC, COLLECTOR CURRENT (mA)
100
10 1100
Figure 9. Output Capacitance
IC, COLLECTOR CURRENT (mA)
0 10 20 30
VO = 0.2 V
TA= –25
°
C
75
°
C
100
10
1
0.1 40 50
Figure 10. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001 01 2 3 4
V
in, INPUT VOLTAGE (VOLTS)
5678910
Figure 11. Input Voltage versus Output Current
0.01
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS)
0.1
1
10
40
IC, COLLECTOR CURRENT (mA)
020 50
75
°
C
25
°
C
TA= –25
°
C
50
010203040
4
3
2
1
0
V
R
, REVERSE BIAS VOLT AGE (VOLTS)
Cob, CAPACITANCE (pF)
25
°
C
IC/IB = 10
25
°
C
–25
°
C
VCE = 10 V
TA=75
°
C
f = 1 MHz
lE = 0 V
TA = 25
°
C
75
°
C25
°
CTA= –25
°
C
VO = 5 V
6 Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5113T1
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 12. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01 010203040
75
°
C
25
°
C
VCE(sat), MAXIMUM COLLECTOR VOLT AGE (VOLTS)
Figure 13. DC Current Gain
1000
100
10 1 10 100
IC, COLLECTOR CURRENT (mA)
–25
°
C
Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001010
25
°
C
Vin, INPUT VOLTAGE (VOLTS)
–25
°
C
50
010203040
1
0.8
0.6
0.4
0.2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
123456789
Figure 16. Input Voltage versus Output Current
100
10
1
0.1 010203040
I
C
, COLLECTOR CURRENT (mA)
TA= –25
°
C25
°
C
75
°
C
50
IC/IB = 10
TA= –25
°
C25
°
C
TA=75
°
C
f = 1 MHz
lE = 0 V
TA = 25
°
C
VO = 5 V
TA=75
°
C
V
O
= 0.2 V
7
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5114T1
10
1
0.1 01020304050
100
10
10246810
4.5
4
3.5
3
2.5
2
1.5
1
0.5
00 2 4 6 8101520253035404550
V
R
, REVERSE BIAS VOLT AGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 17. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
020406080
V
CE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Figure 18. DC Current Gain
1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
Figure 21. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
–25
°
C
25
°
C
TA=75
°
C
V
CE = 10 V
180
160
140
120
100
80
60
40
20
02 4 6 8 15 20 40 50 60 70 80 90
f = 1 MHz
lE = 0 V
TA = 25
°
C
LOAD
+12 V
Figure 22. Inexpensive, Unregulated Current Source
Typical Application
for PNP BRTs
25
°
C
IC/IB = 10 TA= –25
°
C
TA=75
°
C25
°
C
–25
°
C
VO = 5 V
VO = 0.2 V 25
°
C
TA= –25
°
C
75
°
C
75
°
C
8 Motorola Small–Signal Transistors, FETs and Diodes Device Data
MINIMUM RECOMMENDED FOOTPRINTS FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
mm
inches
0.035
0.9
0.075
0.7
1.9
0.028
0.65
0.025
0.65
0.025
SC–70/SOT–323 POWER DISSIPATION
The power dissipation of the SC–70/SOT–323 is a function
of the pad size. This can vary from the minimum pad size for
soldering to the pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction tempera-
ture of the die, RθJA, the thermal resistance from the device
junction to ambient; and the operating temperature, TA.
Using the values provided on the data sheet, PD can be
calculated as follows:
PD = TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature T A of 25°C, one can
calculate the power dissipation of the device which in this
case is 150 milliwatts.
PD = 150°C – 25°C
833°C/W = 150 milliwatts
The 833°C/W assumes the use of the recommended
footprint on a glass epoxy printed circuit board to achieve a
power dissipation of 150 milliwatts. Another alternative would
be to use a ceramic substrate or an aluminum core board
such as Thermal Clad. Using a board material such as
Thermal Clad, a power dissipation of 300 milliwatts can be
achieved using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
•Always preheat the device.
•The delta temperature between the preheat and
soldering should be 100°C or less.*
•When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference should be a maximum of 10°C.
•The soldering temperature and time should not exceed
260°C for more than 10 seconds.
•When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
•After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
9
Motorola Small–Signal Transistors, FETs and Diodes Device Data
SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass
or stainless steel with a typical thickness of 0.008 inches.
The stencil opening size for the surface mounted package
should be the same as the pad size on the printed circuit
board, i.e., a 1:1 registration.
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of control
settings that will give the desired heat pattern. The operator
must set temperatures for several heating zones, and a
figure for belt speed. Taken together, these control settings
make up a heating “profile” for that particular circuit board.
On machines controlled by a computer, the computer
remembers these profiles from one operating session to the
next. Figure 23 shows a typical heating profile for use when
soldering a surface mount device to a printed circuit board.
This profile will vary among soldering systems but it is a good
starting point. Factors that can affect the profile include the
type of soldering system in use, density and types of
components on the board, type of solder used, and the type
of board or substrate material being used. This profile shows
temperature versus time. The line on the graph shows the
actual temperature that might be experienced on the surface
of a test board at or near a central solder joint. The two
profiles are based on a high density and a low density board.
The Vitronics SMD310 convection/infrared reflow soldering
system was used to generate this profile. The type of solder
used was 62/36/2 Tin Lead Silver with a melting point
between 177–189°C. When this type of furnace is used for
solder reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.
STEP 1
PREHEAT
ZONE 1
“RAMP”
STEP 2
VENT
“SOAK”
STEP 3
HEATING
ZONES 2 & 5
“RAMP”
STEP 4
HEATING
ZONES 3 & 6
“SOAK”
STEP 5
HEATING
ZONES 4 & 7
“SPIKE”
STEP 6
VENT STEP 7
COOLING
200
°
C
150
°
C
100
°
C
50
°
C
TIME (3 TO 7 MINUTES T OTAL) TMAX
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
205
°
TO 219
°
C
PEAK AT
SOLDER JOINT
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
100
°
C
150
°
C160
°
C
140
°
C
Figure 23. Typical Solder Heating Profile
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES 170
°
C
10 Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
CASE 419-02
ISSUE H
SC–70/SOT–323
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
CRN
AL
D
G
V
SB
H
J
K
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.071 0.087 1.80 2.20
B0.045 0.053 1.15 1.35
C0.035 0.049 0.90 1.25
D0.012 0.016 0.30 0.40
G0.047 0.055 1.20 1.40
H0.000 0.004 0.00 0.10
J0.004 0.010 0.10 0.25
K0.017 REF 0.425 REF
L0.026 BSC 0.650 BSC
N0.028 REF 0.700 REF
R0.031 0.039 0.80 1.00
S0.079 0.087 2.00 2.20
V0.012 0.016 0.30 0.40
0.05 (0.002)
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Af firmative Action Employer .
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MUN5111T1/D
*MUN5111T1/D*
◊
