MITSUBISHI SEMICONDUCTOR M63803P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63803P, M63803FP, M63803GP and M63803KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply. FEATURES Four package configurations (P, FP, GP and KP) Medium breakdown voltage (BVCEO 35V) Synchronizing current (IC(max) = 300mA) Low output saturation voltage Wide operating temperature range (Ta = -40 to +85C) PIN CONFIGURATION INPUT IN1 1 16 O1 IN2 2 15 O2 IN3 3 14 O3 IN4 4 13 O4 IN5 5 12 O5 IN6 6 11 O6 IN7 7 10 O7 GND 8 OUTPUT NC 9 16P4(P) 16P2N-A(FP) 16P2S-A(GP) Package type 16P2Z-A(KP) NC : No connection CIRCUIT DIAGRAM OUTPUT APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals INPUT 10.5k 10k GND FUNCTION The M63803P, M63803FP, M63803GP and M63803KP each have seven circuits consisting of NPN transistor. The transistor emitters are all connected to the GND pin (pin 8) The transistors allow synchronous flow of 300mA collector current. A maximum of 35V voltage can be applied between the collector and emitter. ABSOLUTE MAXIMUM RATINGS Symbol VCEO IC VI Pd (Unless otherwise noted, Ta = -40 ~ +85C) Parameter Collector-emitter voltage Collector current Conditions Output, H Current per circuit output, L Input voltage Power dissipation Ta = 25C, when mounted on board Topr Tstg The seven circuits share the GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Operating temperature Storage temperature M63803P M63803FP M63803GP M63803KP Ratings -0.5 ~ +35 300 Unit V mA -0.5 ~ +35 1.47 V 1.00 0.80 0.78 -40 ~ +85 -55 ~ +125 W C C Jan. 2000 MITSUBISHI SEMICONDUCTOR M63803P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = -40 ~ +85C) Symbol VO Parameter Limits Test conditions Output voltage Duty Cycle no more than 45% M63803P Collector current (Current per 1 cirIC M63803FP cuit when 7 circuits are coming on simultaneously) M63803GP M63803KP Duty Cycle no more than 100% Duty Cycle no more than 30% Duty Cycle no more than 100% Duty Cycle no more than 24% Duty Cycle no more than 100% Duty Cycle no more than 24% Duty Cycle no more than 100% VIN Input voltage min typ max 0 0 -- -- 35 250 0 0 0 0 -- -- -- -- 160 250 130 250 0 0 0 0 -- -- -- -- 120 250 120 20 Unit V mA V ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol Parameter V (BR) CEO Collector-emitter breakdown voltage VCE(sat) VIN(on) h FE Limits Test conditions ICEO = 10A IIN = 1mA, IC = 10mA Collector-emitter saturation voltage IIN = 2mA, IC = 150mA "On" input voltage IIN = 1mA, IC = 10mA min 35 -- -- 2.4 typ -- -- -- 3.5 max -- 0.2 0.8 4.2 VCE = 10V, IC = 10mA 50 -- -- DC amplification factor Unit V V V -- SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25 C) Symbol Parameter ton Turn-on time toff Turn-off time CL = 15pF (note 1) min typ max -- 125 -- -- 250 -- Unit ns ns TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT Limits Test conditions Vo 50% 50% INPUT Measured device RL OUTPUT PG 50 CL OUTPUT 50% 50% ton toff (1)Pulse generator (PG) characteristics : PRR=1kHz, tw = 10s, tr = 6ns, tf = 6ns, Zo = 50, VIH = 3V (2)Input-output conditions : RL = 220, Vo = 35V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Jan. 2000 MITSUBISHI SEMICONDUCTOR M63803P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY TYPICAL CHARACTERISTICS Input Characteristics 8 1.5 M63803P 6 Ta = -40C Input current II (mA) Power dissipation Pd (W) Thermal Derating Factor Characteristics 2.0 M63803FP 1.0 M63803GP 0.744 M63803KP 0.520 0.418 0.406 0.5 0 25 50 75 85 1~4 5 6 7 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 20 40 60 80 Collector current Ic (mA) Collector current Ic (mA) 20 400 3 4 200 5 6 7 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 85C 100 0 100 1~2 300 0 20 40 60 80 Duty cycle (%) Duty cycle (%) Duty Cycle-Collector Characteristics (M63803FP) Duty Cycle-Collector Characteristics (M63803FP) 100 400 4 5 6 7 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 20 40 60 Duty cycle (%) 80 100 Collector current Ic (mA) 1~3 200 0 15 Duty Cycle-Collector Characteristics (M63803P) 300 100 10 Duty Cycle-Collector Characteristics (M63803P) 200 0 5 Input voltage VI (V) 300 100 0 Ambient temperature Ta (C) 400 Collector current Ic (mA) Ta = 85C 2 100 400 0 Ta = 25C 0 0 0 4 300 1 2 200 100 0 0 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 85C 20 40 60 80 3 4 5 6 7 100 Duty cycle (%) Jan. 2000 MITSUBISHI SEMICONDUCTOR M63803P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY Duty Cycle-Collector Characteristics (M63803GP/KP) 400 300 1~ 2 3 4 5 6 7 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 100 0 0 20 40 60 80 Collector current Ic (mA) Collector current Ic (mA) 400 100 0 3 4 56 7 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 85C 20 40 60 80 Output Saturation Voltage Collector Current Characteristics Output Saturation Voltage Collector Current Characteristics 100 100 VI = 6V IB = 3mA 200 Ta = 25C VI = 7V IB = 2mA IB = 1.5mA IB = 1mA 150 100 IB = 0.5mA 50 0 0.2 0.4 0.6 Collector current Ic (mA) Collector current Ic (mA) 2 200 Duty cycle (%) Ta = 25C VI = 4V VI = 3V 40 VI = 2V 20 0 0.05 0.10 0.15 0.20 Output saturation voltage VCE(sat) (V) Output Saturation Voltage Collector Current Characteristics DC Amplification Factor Collector Current Characteristics 103 DC amplification factor hFE Ta = -40C Ta = 25C Ta = 85C 60 40 20 0 0 60 Output saturation voltage VCE(sat) (V) II = 2mA 80 VI = 5V 80 0 0.8 100 Collector current Ic (mA) 1 Duty cycle (%) 250 0 300 0 100 Duty Cycle-Collector Characteristics (M63803GP/KP) 0.05 0.10 0.15 0.20 Output saturation voltage VCE(sat) (V) 7 VCE = 10V Ta = 25C 5 3 2 102 7 5 3 2 101 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Collector current Ic (mA) Jan. 2000