Jan. 2000
VCEO
IC
VI
Pd
Topr
Tstg
Unit : Ω
The seven circuits share the GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
INPUT
OUTPUT
GND
10.5k
10k
16P4(P)
16P2N-A(FP)
16P2S-A(GP)
16P2Z-A(KP)
IN7→
710
IN5→
512
INPUT OUTPUT
IN4→
413
IN3→
3
IN2→
215
1
IN1→
16
GND NC
9
8
IN6→
611
NC : No connection
→O1
→O2
→O3
→O4
→O5
→O6
→O7
14
Package type
Collector-emitter voltage
Collector current
Input voltage
Power dissipation
Operating temperature
Storage temperature
PIN CONFIGURATION
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63803P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY
DESCRIPTION
M63803P, M63803FP, M63803GP and M63803KP are
seven-circuit Singe transistor arrays. The circuits are made
of NPN transistors. Both the semiconductor integrated cir-
cuits perform high-current driving with extremely low input-
current supply.
FEATURES
●Four package configurations (P, FP, GP and KP)
●Medium breakdown voltage (BVCEO≥35V)
●Synchronizing current (IC(max) = 300mA)
●Low output saturation voltage
●Wide operating temperature range (Ta = –40 to +85°C)
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
FUNCTION
The M63803P, M63803FP, M63803GP and M63803KP each
have seven circuits consisting of NPN transistor. The transis-
tor emitters are all connected to the GND pin (pin 8)
The transistors allow synchronous flow of 300mA collector
current. A maximum of 35V voltage can be applied
between the collector and emitter.
CIRCUIT DIAGRAM
V
mA
V
W
°C
°C
–0.5 ~ +35
300
–0.5 ~ +35
1.47
1.00
0.80
0.78
–40 ~ +85
–55 ~ +125
RatingsSymbol Parameter Conditions Unit
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
Output, H
Current per circuit output, L
Ta = 25°C, when mounted
on board
M63803P
M63803FP
M63803GP
M63803KP
Jan. 2000
ton toff
50%
50%
50%
50%
OUTPUT
INPUT
(1)Pulse generator (PG) characteristics : PRR=1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, V
IH
= 3V
(2)Input-output conditions : R
L
= 220Ω, Vo = 35V
(3)Electrostatic capacity C
L
includes floating capacitance at
connections and input capacitance at probes
PG
50Ω
R
L
OUTPUT
INPUT Vo
C
L
Measured device
Duty Cycle no more than 45%
Duty Cycle no more than 100%
Duty Cycle no more than 30%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63803P/FP/GP/KP
7-UNIT 300 mA TRANSISTOR ARRAY
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
V
(BR) CEO
VIN(on)
hFE
V
V
—
35
—
—
2.4
50
—
—
—
3.5
—
—
0.2
0.8
4.2
—
Symbol UnitParameter Test conditions Limits
min typ max
V
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
Collector-emitter breakdown voltage
“On” input voltage
DC amplification factor
ICEO = 10µA
IIN = 1mA, IC = 10mA
IIN = 2mA, IC = 150mA
IIN = 1mA, IC = 10mA
VCE = 10V, IC = 10mA
VCE(sat)
Collector-emitter saturation voltage
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
VOV0
0
0
0
0
0
0
0
0
0
—
—
—
—
—
—
—
—
—
—
35
250
160
250
130
250
120
250
120
20
Symbol UnitParameter Test conditions Limits
min typ max
Output voltage
mA
V
IC
VIN Input voltage
Collector current
(Current per 1 cir-
cuit when 7 circuits
are coming on si-
multaneously)
M63803P
M63803FP
M63803GP
M63803KP
ns
ns
—
—125
250 —
—
Symbol UnitParameter Test conditions Limits
min typ max
Turn-on time
Turn-off time
ton
toff CL = 15pF (note 1)
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63803P/FP/GP/KP
7-UNIT 300 mA TRANSISTOR ARRAY
TYPICAL CHARACTERISTICS
Thermal Derating Factor Characteristics
Ambient temperature Ta (°C)
Power dissipation Pd (W)
Input Characteristics
Input voltage V
I
(V)
Input current I
I
(mA)
Duty Cycle-Collector Characteristics
(M63803P)
Duty cycle (%)
Collector current Ic (mA)
Duty Cycle-Collector Characteristics
(M63803P)
Duty cycle (%)
Collector current Ic (mA)
Duty Cycle-Collector Characteristics
(M63803FP)
Duty cycle (%)
Collector current Ic (mA)
Duty Cycle-Collector Characteristics
(M63803FP)
Duty cycle (%)
Collector current Ic (mA)
2.0
1.5
1.0
0.5
00 25 50 75 100
M63803P
M63803FP
M63803GP
M63803KP 0.744
0.520
0.418
0.406
85
8
6
4
2
002015105
Ta = 85°C
Ta = –40°C
Ta = 25°C
0100
20 40 60 80
400
300
200
100
0
5
6
7
1~4
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
400
300
200
100
00100
20 40 60 80
1~2
3
4
5
6
7
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
400
300
200
100
00100
20 40 60 80
1~3
4
5
6
7
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
400
300
200
100
00100
20 40 60 80
1
2
3
4
5
6
7
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63803P/FP/GP/KP
7-UNIT 300 mA TRANSISTOR ARRAY
Duty Cycle-Collector Characteristics
(M63803GP/KP)
Duty cycle (%)
Collector current Ic (mA)
Duty Cycle-Collector Characteristics
(M63803GP/KP)
Duty cycle (%)
Collector current Ic (mA)
Output saturation voltage V
CE(sat)
(V)
Collector current Ic (mA)
Output Saturation Voltage
Collector Current Characteristics
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage V
CE(sat)
(V)
Collector current Ic (mA)
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage V
CE(sat)
(V)
Collector current Ic (mA)
DC Amplification Factor
Collector Current Characteristics
Collector current Ic (mA)
DC amplification factor h
FE
400
300
200
100
00100
20 40 60 80
1
~
2
4
5
6
7
3
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
400
300
200
100
00100
20 40 60 80
1
2
3
4
56
7
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
250
200
150
100
50
00 0.2 0.4 0.6 0.8
Ta = 25°C
I
B
= 0.5mA
I
B
= 1mA
I
B
= 1.5mA
I
B
= 3mA
I
B
= 2mA
100
80
60
40
20
00 0.05 0.10 0.15 0.20
Ta = 25°C
V
I
= 2V
V
I
= 3V
V
I
= 4V
V
I
= 5V
V
I
= 7V
V
I
= 6V
100
80
60
40
20
00 0.05 0.10 0.15 0.20
Ta = 85°C
I
I
= 2mA
Ta = 25°C
Ta = –40°C
10
0
10
1
10
2
10
1
10
2
10
3
2357 23 57
2
3
5
7
2
3
5
7
10
3
23 57
V
CE
= 10V
Ta = 25°C
