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1N4148WT / 1N4448WT / 1N914BWT — High Conductance Fast Switching Diode
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
1N4148WT / 1N4448WT / 1N914BWT Rev. A2 1
September 2009
1N4148WT / 1N4448WT / 1N914BWT
High Conductance Fast Switching Diode
Features
• Fast Switching Di o d e (Trr <4.0nsec)
• Flat Lead, Surface Mount Device Under 0.70mm Height
• Extremely Small Outline Plastic Package SOD523F
• Moisture Level Sensitivity 1
• Pb-free Version and RoHS Compliant
• Matte Tin (Sn) Lead Finish
• Green Mold Compound
Absolute Maximum Ratings* TA=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperatur e of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
* Device mounted on FR-4 PCB minimum land pad.
Electrical Characteristics TA=25°C unless otherwise noted
Symbol Parameter Value Units
VRSM Non-Repetitive Peak Reverse Voltage 75 V
VRRM Repetitive Peak Reverse Voltage 75 V
I FRM Repetitive Peak Forward Current 300 mA
TJOperating Junction Temperature Range -55 to +150 °C
TSTG Storage Temperature Range -55 to +150 °C
Symbol Parameter Value Units
PDPower Dissipation (TC=25°C) 200 mW
RθJA Thermal Resistance, Junction to Ambient 500 °C/W
Symbol Parameter Test Conditions Min Typ Max Units
BVRBreakdown Voltage IR = 100 μA
IR = 5 μA100
75 V
IRReverse Current VR = 20 V
VR = 75 V 25
5nA
μA
VFForward Voltage 1N4448WT/ 914BWT
1N4148WT
1N4448WT/ 914BWT
IF = 5 mA
IF = 10 mA
IF = 100 mA
0.62 0.72
1
1V
CODiode Capacitance VR = 0, f = 1 MHz 4 pF
TRR Reverse Recovery Time I F = 10 mA, VR = 6.0 V
I RR = 1 mA, RL = 100 Ω4nS
SOD-523F
Band Indicates Cathode
Device Marking Co de
Device Type Device Marking
1N4148WT E1
1N4448WT E2
1N914BWT E3
Cathode
ELECTRICAL SYMBOL
Anode
1N4148WT / 1N4448WT / 1N914BWT — High Conductance Fast Switching Diode
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
1N4148WT / 1N4448WT / 1N914BWT Rev. A2 2
Typical Performance Characteristics
1N4148WT / 1N4448WT / 1N914BWT — High Conductance Fast Switching Diode
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
1N4148WT / 1N4448WT / 1N914BWT Rev. A2 3
Typical Performance Characteristics (Continue)
1N4148WT / 1N4448WT / 1N914BWT — High Conductance Fast Switching Diode
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
1N4148WT / 1N4448WT / 1N914BWT Rev. A2 4
Typical Performance Characteristics (Continue)
1N4148WT / 1N4448WT / 1N914BWT — High Conductance Fast Switching Diode
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
1N4148WT / 1N4448WT / 1N914BWT Rev. A2 5
Physical Dimension
SOD-523F
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
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The datasheet is for reference information only. Rev. I41
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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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