mA
**Mounted on a ceramic substrate of 8mm x 10mm x 0.7mm
Thermal Resistance
Collector Base Voltage
Storge Temperature Tstg
mW
Tamb = 60 oC
Junction Temperature Tj 150 oC
Total power dissipation up to Ptot**
DESCRIPTION SYMBOL UNITS
Collector Emmitter Voltage (+VBE = 1V)
V
5V
IEM
ICmA
ICM
mA
V
V80 50 30
Emitter Base Voltage VEBO
Emitter Current - Peak
Collector Current (DC)
Base Current - Peak IBM
Collector Current - Peak
VCBO
VCEX
Collector Emitter Voltage VCEO
BC856
200
100
200
65 45
BC857 BC858
30
250
80 50 30
200
From soldering points to ambient Rth(s-a)** 90
-55 to +150 oC
From tab to soldering points Rth(t-s) 280
From junction to tab Rth(j-t) 60
K/W
PNP Silicon Planar Epitaxial Transistors
BC856
BC857
BC858
Unit: inch (mm)
Pin configuration:
1. BASE
2. EMITTER
3. COLLECTOR
1
3
2
Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise)
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BC856
BC857
BC858
MIN TYP MAX
15
4
0.6 0.75
0.82
0.30
0.65
0.7
0.85
0.60
125 475
125 800
125 250
220 475
420 800
4.5
100
125 500
125 800
10
BC856
BC857/BC858
| hfe |
NF IC = 0.2mA, VCE = 5V
RS= 2k ohm, f = 1KHZ, B= 200HZ
dB
IC = 2mA, VCE = 5V, f= 1kHZ
*VBE (on) decreases by about 2mV/K with increase temperature.
***VBE (Sat) decreases by about 1.7mV/K with increase temperature.
V
V
V
V
IC = 10mA, VCB = 5V, f = 100MHZMHZ
Collector Capacitance CCIE = ie = 0, VCB = 10V, f = 1MHZpF
BC857/BC858
BC856
hFE
BC857C/BC858C
BC856B/BC857B/BC858B
BC856A/BC857A/BC858A
IC = 100mA, IB = 5mA
IC = 100mA, IB = 5mA
Collector Cut Off Current ICBO
VCB = 30V, IE = 0 nA
VCB = 30V, IE = 0, Tj = 150oCuA
Base Emitter On Voltage
TEST CONDITION
VBE(on)*IC = 2mA, VCE = 5V
IC = 10mA, VCE = 5V
Transition Frequency
Knee Voltage VCEK
IC = 10mA, -IB = Value for which
IC = 11mA at -VCE = 1V
DC Current Gain
Small Signal Current Gain
DESCRIPTION SYMBOL UNITS
Noise Figure
Collector Emitter Saturation Voltage VCE(Sat)
IC = 10mA, IB = 0.5mA
Base Emitter Saturation Voltage VBE(Sat)*** IC = 10mA, IB = 0.5mA
IC = 2mA, VCE = 5V
fT
Electrical Characteristics (at Ta=25 oC unless otherwise specified)
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