VSMY2850RG, VSMY2850G www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology VSMY2850RGX01 FEATURES VSMY2850GX01 * Package type: surface mount * Package form: GW, RGW * Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 * Peak wavelength: p = 850 nm * High reliability 21725-5 * High radiant power * Very high radiant intensity DESCRIPTION * Angle of half intensity: = 10 VSMY2850 series are infrared, 850 nm emitting diodes based on GaAlAs surface emitter chip technology with extreme high radiant intensities, high optical power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD). * Suitable for high pulse current operation * Terminal configurations: gullwing or reverse gullwing * Package matches with detector VEMD2500X01 series * Floor life: 4 weeks, MSL 2a, acc. J-STD-020 * Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC APPLICATIONS * IrDA compatible data transmission * Halogen-free according to IEC 61249-2-21 definition * Miniature light barrier Note ** Please see document "Vishay Material Category Policy": www.vishay.com/doc?99902 * Photointerrupters * Optical switch * Emitter source for proximity sensors * IR touch panels * IR illumination PRODUCT SUMMARY COMPONENT Ie (mW/sr) (deg) P (nm) VSMY2850RG 100 10 850 10 VSMY2850G 100 10 850 10 tr (ns) Note * Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY2850RG Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VSMY2850G Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note * MOQ: minimum order quantity Rev. 1.2, 04-Aug-11 1 Document Number: 83398 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2850RG, VSMY2850G www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VR 5 V Reverse voltage Forward current IF 100 mA Peak forward current tp/T = 0.5, tp 100 s IFM 200 mA Surge forward current tp = 100 s IFSM 1 A PV 190 mW Power dissipation Junction temperature Tj 100 C Operating temperature range Tamb - 40 to + 85 C Storage temperature range Tstg - 40 to + 100 C acc. figure 7, J-STD-020 Tsd 260 C J-STD-051, soldered on PCB RthJA 250 K/W Soldering temperature Thermal resistance junction/ambient 120 200 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 160 140 120 100 RthJA = 250 K/W 80 60 40 100 80 60 RthJA = 250 K/W 40 20 20 0 0 0 10 21890 20 30 40 50 60 70 80 0 90 100 Tamb - Ambient Temperature (C) 10 50 60 70 80 90 100 Tamb - Ambient Temperature (C) 21891 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 30 40 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF TEST CONDITION SYMBOL IF = 100 mA, tp = 20 ms VF Radiant intensity TYP. MAX. UNIT 1.65 1.9 V IF = 1 A, tp = 100 s VF 2.9 V IF = 1 mA TKVF - 1.45 mV/K IF = 10 mA TKVF - 1.3 mV/K IR not designed for reverse operation A VR = 0 V, f = 1 MHz, E = 0 mW/cm2 CJ 125 IF = 100 mA, tp = 20 ms Ie Reverse current Junction capacitance MIN. 50 100 pF 150 mW/sr IF = 1 A, tp = 100 s Ie 850 mW/sr IF = 100 mA, tp = 20 ms e 55 mW IF = 100 mA TKe - 0.35 %/K Peak wavelength IF = 100 mA p Spectral bandwidth IF = 30 mA 30 nm Temperature coefficient of p IF = 30 mA TKp 0.25 nm/K Rise time IF = 100 mA, 20 % to 80 % tr 10 ns Fall time IF = 100 mA, 20 % to 80 % Radiant power Temperature coefficient of radiant power Angle of half intensity Virtual source diameter Rev. 1.2, 04-Aug-11 10 840 850 deg 870 nm tf 10 ns d 1.5 mm 2 Document Number: 83398 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2850RG, VSMY2850G www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 10 e, rel - Relative Radiant Power 1 0.1 0.01 IF = 30 mA 0.75 0.5 0.25 0.001 0 0.5 1 1.5 2 2.5 3 0 650 3.5 VF - Forward Voltage (V) 22097 750 Fig. 3 - Forward Current vs. Forward Voltage 850 Fig. 5 - Relative Radiant Power vs. Wavelength 0 1000 Ie rel - Relative Radiant Intensity Ie - Radiant Intensity (mW/sr) tp = 100 s 100 10 10 20 30 40 1.0 50 0.9 60 0.8 70 80 0.7 1 0.001 0.01 0.1 1 21111 0.6 0.4 0.2 0 IF - Forward Current (A) 22098 Fig. 4 - Radiant Intensity vs. Forward Current Fig. 6 - Relative Radiant Intensity vs. Angular Displacement SOLDER PROFILE DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. 300 max. 260 C 245 C 255 C 240 C 217 C 250 Temperature (C) 950 - Wavelength (nm) 21776-1 - Angular Displacement IF - Forward Current (A) tp = 100 s 1 FLOOR LIFE 200 Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 4 weeks Conditions: Tamb < 30 C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020. max. 30 s 150 max. 100 s max. 120 s 100 max. ramp up 3 C/s max. ramp down 6 C/s 50 DRYING 0 0 19841 50 100 150 200 250 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 C (+ 5 C), RH < 5 %. 300 Time (s) Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 Rev. 1.2, 04-Aug-11 3 Document Number: 83398 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2850RG, VSMY2850G www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters: VSMY2850RG O 1.8 0.1 0.3 Z 1.6 0.19 2.77 0.2 0.05 0.1 0.4 2.2 2.2 5.8 0.2 Z 20:1 1.1 0.1 Exposed copper 0.254 0.5 2.3 0.2 0.4 2.3 0.2 Pin ID Anode 1.7 Cathode technical drawings according to DIN specifications 0.75 Solder pad proposal acc. IPC 7351 Not indicated tolerances 0.1 O 2.3 0.1 6.7 Drawing-No.: 6.544-5391.03-4 Issue: 1; 18.03.10 22100 Rev. 1.2, 04-Aug-11 4 Document Number: 83398 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2850RG, VSMY2850G www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters: VSMY2850G O 1.8 2.2 0.19 1.6 X 0.05 2.77 0.2 0.3 0.4 2.2 4.2 0.2 Exposed copper X 20:1 0.254 0.5 2.3 0.2 0.4 2.3 0.2 0.6 Pin ID 0.75 Anode Cathode technical drawings according to DIN specifications Solder pad proposal acc. IPC 7351 Not indicated tolerances 0.1 2.45 5.15 Drawing-No.: 6.544-5383.03-4 Issue: 1; 18.03.10 22099 Rev. 1.2, 04-Aug-11 5 Document Number: 83398 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2850RG, VSMY2850G www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VSMY2850RG Unreel direction X 2. O 62 0.5 Reel O 13 0.5 O 330 1 0.5 5 Tape position coming out from reel 6000 pcs/reel Label posted here Technical drawings according to DIN specifications 12.4 1.5 Leader and trailer tape: Empty (160 mm min.) Parts mounted Direction of pulling out Devicce Lead I Lead II Collector Emitter Cathode Anode Anode Cathode O 1.55 0.05 I VEMT2000 VEMT2500 4 0.1 X 2:1 2 0.05 VEMD2000 5.5 0.05 VEMD2500 VSMB2000 VSMG2000 VSMY2850RG 3.05 0.1 12 0.3 Terminal position in tape 1.75 0.1 Empty (400 mm min.) 4 0.1 II Drawing-No.: 9.800-5100.01-4 Issue: 2; 18.03.10 21572 Rev. 1.2, 04-Aug-11 6 Document Number: 83398 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMY2850RG, VSMY2850G www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VSMY2850G Reel X Unreel direction 5 O 62 0.5 2. O 13 0.5 O 330 1 0.5 Tape position coming out from reel 6000 pcs/reel Label posted here technical drawings according to DIN specifications 12.4 1.5 Leader and trailer tape: Empty (160 mm min.) Parts mounted Direction of pulling out O 1.55 0.05 Devicce Lead I Lead II Collector Emitter Cathode Anode Anode Cathode I VEMT2020 VEMT2520 4 0.1 X 2:1 2 0.05 VSMB2020 VEMD2020 VEMD2520 VSMY2850G 3.05 0.1 4 0.1 II 5.5 0.05 VSMG2020 12 0.3 Terminal position in tape 1.75 0.1 Empty (400 mm min.) Drawing-No.: 9.800-5091.01-4 Issue: 3; 18.03.10 21571 Rev. 1.2, 04-Aug-11 7 Document Number: 83398 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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