ALPHANUMERIC INDEX CROSS-REFERENCE (Continued) Motorola Motorola Motorola Motorola Industry Direct Similar Page Industry Direct Similar Page Part Number Replacement Replacement Number Part Number Replacement Replacement Number MJ723 MJ12002 3-637 MJD44H11 MJD44H11 3-808 MJ802 MJ802 3-526 MJD44H11-1 MJD44H11-1 3-808 MJ804 MJ12004 3-644 MJD45H11 MJD45H11 3-808 MJ8700 2N6193 3-158 MJD45H11-1 MJD45H11-1 3-808 MJ8500 MJ8501 3-546 MJD47 MJD47 3-812 MJ8501 MJ8501 3-546 MJD47-1 MJD47-1 3-812 MJ8502 MJ8502 3-552 MJD50 MJD50 3-812 MJ8503 MJ8503 3-652 MJD650-1 MJD50-1 3-812 MJ8504 MJ8504 3-558 MJD6036 MSD6036 3-848 MJ8505 MJ8505 3-558 MJD6036-1 MJD6036-1 3-848 MJ900 MJ900 3-528 MJD6039 MJD6039 3-848 MJ901 MJ901 3-528 MJD6039-1 MJD6039-1 3-848 M920 2N6298 3-147 MJE101 MJE2955 3-904 MJ921 2N6299 3-147 MJE102 MJE2955 3-904 MJD112 MJD112 3-816 MJE103 MJE2955 3-904 MJD112-1 MJD112-1 3-816 MJE104 MJE2955 3-904 MJD117 MJD117 3-816 MJE105 MJE105 3-860 MJD117-1 MJ0417-1 3-816 MJE105K TIP42A 3-1083 MJ0122 MJD122 3-822 MJE1090 MJE1090 - MJ0122-1 MJD122-1 3-822 MJE1091 MJE1093 - MJD127 MJD127 3-822 MJE1092 MJE1092 _ MJD127-+ MJD127-1 3-822 MJE1093 MJE1093 _ MJD13003 MJD13003 3-854 MJE1400 MJE1100 - MJ013003-1 MJD13003-1 3-822 MJE1101 MJE1101 - MJ0148 MJD148 3-828 MJE1102 MJE1102 - MJD148-1 MJD148-1 _ MJE1103 MJE1103 _ MJD200 MJD200 3-832 MJE12007 MJE12007 3-936 MJD200-1 MJD200-1 3-832 MJE1290 2N5988 3-131 MJD210 MJD210 3-832 MJE1291 2N5988 3-131 MJO210-1 MJD210-1 3-832 MJE13002 MJE13002 3-938 MJD29 MJD31 3-797 MJE13003 MJE13003 3-938 MJD29-1 MJD31-1 3-797 MJE13004 MJE13004 3-944 MJD2855 MJD2955 3-844 MJE13005 MJE13005 3-944 MJD2955-1 MJD2955-1 3-844 MJE13006 MJE13006 3-950 MJD29C MJD31C 3-797 MJE13007 MJE13007 3-950 MJD29C1 MJD31C1 3-797 MJE13008 MJE13008 3-958 MJD30 MJD32 3-797 MJE13009 MJE13009 3-958 MJD30-1 MJD32-1 3-797 MJE13070 MJE13070 3-966 MJD3055 MJ03055 3-844 MJE13071 MJE16002 3-976 MJD3055-1 MJ03055-1 3-844 MJE1320 MJE1320 3-892 MJD30C MJD32C 3-797 MJE15028 MJE15028 3-972 MJD30C1 MJD32C1 3-797 MJE15029 MJE15029 3-972 MJD31 MJD31 3-797 MJE15030 MJE15030 3-972 MJ031-1 MJD31-1 3-797 MJE15031 MJE15031 3-972 MJD31C MJID3IC 3-797 MJE16002 MJE16002 3976 MJD31C1 MJD31C1 3-797 MJE16004 MJE16004 3-976 MJD32 MJD32 3-797 MJE16032 MJE16032 3-984 MJD32-1 MJD32-1 3-797 MJE16034 MJE16034 3-984 MJ032C MJD32C 3-797 MJE1660 MJE1660 3-898 MJD32C1 MJD32C1 3-797 MJE1661 MJE1661 3-898 MJD340 MJD340 3-840 MJE170 MJE170 3-862 MJD340-t MJD340-1 3-840 MJE171 MJE171 3-862 MJ0350 MJD350 3-840 MJE172 MJE172 3-862 MJD350-1 MJO350-1 3-840 MJE180 MJE180 3-862 MJD41C MJO41C 3-801 MJE181 MJE184 3-862 MJD41C1 MJD41C1 3-840 MJE182 MJE182 3-862 MJD42C MJD42C 3-801 MJE200 MJE200 3-866 MJD42C-1 MJD42C-1 3-840 MJE201 MJE3055 3-904 MJD44E3 MJD44E3 3-805 MJE2010 TIP42 3-1083 MJD44E3-1 MJD44E3-1 3-805 MJE2011 TIP42A 3-1083 *Consult Motorola if a direct replacement is necessary. 1-33TABLE 9 PLASTIC CASE 152 (continued) Resistive Switching | mne Yee o(sus) Device Type hee @ic A is @le Mite Plats Max Min NPN PNP Min/Max Amp Max Max Amp Min @ 25C 2 60 MPS-U05 MPS-U55 60 min 0.25 50 10 ~e0 MPS-U06 MPS-U56 60 min 0.25 50 10 100 MPS-U07 MPS-U57 30 min 0.25 50 10 ## Darlington TABLE 10 DPAK SURFACE MOUNT POWER PACKAGE 4 STYLE 1: 1. BASE 2. COLLECTOR 3. EMITTER 1 4 1 4. COLLECTOR 26 2 3 CASE 369A-04 5 CASE 369-03 Resistive Switching Smpe Veg O(sus) Device Type* hFE @ Ic he is @ Ie ike Overs Max Min NPN PNP Min/Max Amp Typ Typ Amp Min @ 25C 0.5 300 MJD340 MJD350 30/240 0.05 15 1 250 MJD47 30/150 0.3 2 0.2 0.3 10 15 400 MJDS50 30/150 0.3 2 0.2 0.3 10 20 15 400 MJD13003 5/25 1 4max | 0.7 max 1 4 15 2 100 MJD1124## MJD117## 1000 min 2 17 1.3 2 2b# 20 3 40 MJD31 MJD32 10 min 1 0.6 0.3 1 3 15 100 MJD31C MJD32C 10 min 1 0.6 0.3 1 3 15 4 45 MJD148 30 min 4 3 20 80 MJD60394## | MJD6036#4 1k/12k 2 17 4.2 2 25 20 5 25 MJD200 MJD210 45/180 2 0.15 0.04 2 65 12.5 6 100 MJD41C MJD42C 15/75 3 0.4 0.15 3 3 20 8 80 MJD44H11 MJD45H11 40 min 4 0.5 0.14 5 50 typ 20 100 MJD1224# MJD127## 1k/12k 4 1.5 2 4 4# 20 10 60 MJD3055 MJD2955 20/100 4 1.5 1.5 3 2 20 80 MJD44E3## 1k min 5 2 0.5 10 20 ## Darlington * Case 369-03 may be ordered by adding -1 suffix to part number. 2-18MOTO = SEMICONDUCTOR a TECHNICAL DATA Designers Data Sheet MJD13003 High Voltage Switchmode Series DPAK For Surface Mount Applications NPN SILICON This device is designed for high-voltage, high-speed power switching inductive circuits POWER TRANSISTOR where fall time is critical. It is particularly suited for 115 and 220 V SWITCHMODE appli- . eos : . : 1.5 AMPERES cations such as switching regulators, inverters, motor controls, solenoid/relay drivers 400 VOLTS and deflection circuits. 15 WATTS @ Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (-1" Suffix) @ Lead Formed Version in 16 mm Tape and Reel (RL Suffix) @ Reverse Biased SOA with Inductive Loads @ Te = 100C @ Inductive Switching Matrix 0.5 to 1.5 Amp, 25 and 100C ... tp @ 1A, 100C is 290 ns (Typ) @ 700 V Blocking Capability @ Switching and SOA Applications Information @ Electrically Similar to the Popular MJE13003 CASE 369A-04 MAXIMUM RATINGS Rating Symbol Vaiue Unit 7 Collector-Emitter Voltage VCEO{sus) 400 Vde Collector-Emitter Voltage Vv 700 Vdc 9 cEV CASE 369-03 Emitter Base Voltage VEBO 9 Vde Collector Current Continuous Ic 1.5 Adc Peak (1) lem 3 - MINIMUM PAD SIZES Base Current 7 Power 2 oe Adc RECOMMENDED FOR aM SURFACE MOUNTED Emitter Current Continuous le 2.25 Adc APPLICATIONS Peak (1) lem 45 Total Power Dissipation @ Ta = 25C (2) Pp 1.56 Watts /- 67 Derate above 25C 0.0125 were 0.266 Total Power Dissipation @ Tc = 25C Pb 15 Watts Derate above 25C 0.12 wre 12 Operating and Storage Junction Temperature Range Ty. Tstg | 65 to +150 C \ o S THERMAL CHARACTERISTICS | Characteristic Symbol Max Unit Sa & Thermal Resistance, Junction to Case ReJc 8.33 C/W [ af Thermal Resistance, Junction to Ambient (2) Rega 80 CAN 1S Maximum Lead Temperature for Soldering Purposes Th 260 C 16 f_ ae >|- 116 {1} Pulse Test: Pulse Width = 5 ms, Duty Cycle = 10%. 0.063 23 | 23 0.063 {2} When surface mounted on minimum pad sizes recommended. 0.090 | 0.090 5 in 3-854MJD13003 ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted.) Characteristic Symbol Min | Typ I Max | Unit OFF CHARACTERISTICS (1) CoHlector-Emitter Sustaining Voltage (ic = 10 mA, Ig = 0) VCEO(sus) 400 _ _ Vdc Collector Cutoff Current IcEV mAdc (Vcev = Rated Value, VBE(off) = 1.5 Vdc) _ _ 0.1 (VcEV = Rated Value, VBE(off) = 1.5 Vde, Tc = 100C) _ _ 2 Emitter Cutoff Current (Veg = 9 Vdc, Ic = 0) leBo _ _ 1 mAdc SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased {Sib See Figure 11 Clamped Inductive SOA with Base Reverse Biased RBSOA See Figure 12 ON CHARACTERISTICS (1) DC Current Gain (Ic = 0.5 Adc, Vcg = 2 Vde} hfe 8 _ 40 _ {Ic = 1 Ade, Vce = 2 Vdc) 5 _ 26 Collector-Emitter Saturation Voltage VCE(sat) Vde (ic = 0.5 Adc, Ig = 0.1 Adc) _ 0.5 (Ic = 1 Ade, Ig = 0.25 Adc) ~ 1 (Ic = 1.5 Adc, Ig = 0.5 Adc) ~ 3 (Ic = 1 Adc, ig = 0.25 Adc, Tc = 100C) _ 1 Base-Emitter Saturation Voitage VBE(sat) Vde (Ic = 0.5 Ade, Ig = 0.1 Adc) ~_ ~ 1 ic = 1 Ade, Ig = 0.25 Adc) (Ic = 1 Adc, Ig = 0.25 Adc, Tc = 100C) DYNAMIC CHARACTERISTICS Current-Gain Bandwidth Product fr 4 10 _~ MHz {l = 100 mAdc, VcE = 10 Vde, f = 1 MHz) Output Capacitance (Vcg = 10 Vde, IE = 0, f = 0.1 MHz) Cob _ 21 _ pF SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time tg 0.05 0.1 Bs Rise Time Vec = 125 Vde, Ic = 1A, ty 0.5 1 us - IB1 = IB2 = 0.2A, tp = 25 us, Storage Time Duty Cycle < 1% ts _ 2 4 MS Fall Time tf _ 0.4 0.7 Bs Inductive Load, Clamped (Table 1, Figure 13) Storage Time ic = 1A, Velamp = 300 Vde, tsy _ 17 4 BS Crossover Time Ip1 = 024 VBE (off) = 5 Vde, te _ 0.29 0.75 BS Fall Time c = 100C tf _ 0.15 ps (1) Pulse Test: Pulse Width = 300 us, Duty Cycle < 2%, OUTLINE DIMENSIONS ec be Lae 0-m| w CASE 369-03 CASE 369A-04 oh L s L ma t || |t- ~| yt c sores = | 4+ MOUNTS SURE F z 2. POSITIONAL TOLERANCE FOR D DIAMETER, { u CITT } 3 Ser ERAN PER ANSE Cf a a r q i qt FF 4 4, CONTROLLING DIMENSION: INCH 5 a t j i | i 2m 4 Ley | len set ve] " + >| 6 lee A NSURAGE 11 BOTH AOKTUM AND A sme STYLE PIN 1. BASE 2. COLLECTOR 3. EMITTER 4 COLLECTOR PIN 1. BASE 2 COLLECTOR 3. EMITTER 4. COLLECTOR MOUNTING SURFACE. 2. POSITIONAL TOLERANCE FOR O" OIAMETEIL Fase OT) 3, DIMENSIONING & TOLERANCING PER ANSI 4. CONTROLLING OIMENSION: INCH Case 369-03 may be ordered by adding a -1 suffix to the device title (i.e. 3-855 MJD13003-1}MJD13003 Ty = 150C 56C hee, DC CURRENT GAIN oo ne Veep = 2V Ta =5V a 4 0.02 0.03 0,050.07 0.1 0.2 03 05 07 1 2 Ic, COLLECTOR CURRENT (AMP) Figure 1. DC Current Gain 14 42 Vee(sat) @ Icllg = 3 _ ~ VBE(on) @ Voge = 2V e 24 = Ty = 55C @ 5 25C oO > > 150C 04 0.02 0.03 0.05 0.07 0.1 02 03 O85 07 1 2 Ic, COLLECTOR CURRENT (AMP) Figure 3. Base-Emitter Voltage Veg = 250 =< a Ty=1 5 iu | 102 s oOo xc oF 5 } 8 100 10-1 REVERSE FORWARD 04 -02 0 +0.2 +04 +06 Vee. BASE-EMITTER VOLTAGE (VOLTS) Figure 5. Collector Cutoff Region V, VOLTAGE {VOLTS} C, CAPACITANCE (pF) 3-856 Vce, COLLECTOR-EMITTER VOLTAGE (VOLTS) 2 0.002 0.35 eS Ss 9 0.02 0.03 ic = 01A ATO5SA 1A 15A 0.005 0.01 0.02 0.05 0.1 62 0.5 1 2 Ip, BASE CURRENT (AMP) Figure 2. Collector Saturation Region Ty = 5C 25C 0.05 0.07 0.1 0.2 03 05 07 1 2 Ic, COLLECTOR CURRENT (AMP} Figure 4. Collector-Emitter Saturation Region 500 300 200 100 70 50 30 20 10 7 5 0.1 0.2 0.5 Cob 1 2 5 10 20 50 1100 200 50011000 Vp. REVERSE VOLTAGE (VOLTS) Figure 6, CapacitanceMJD13003 Table 1. Test Conditions For Dynamic Performance RESISTIVE REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING SWITCHING eg t+5V +125 V MRB26* Rc 0.001 pF g 6V ee + ng DUT. 3 JPwl o, kon2022 Volamp On Score 5 DUTY CYCLE < 10% jo tk | 4 r] I *SELECTED FOR = 1kV Dt 5 ty tf = 10 ns L +5V9 4 5.1k y . 14933 once wot Lee 270 51 ~ NOTE: 0.02 uF PW and Vcc Adjusted for Desired ic Ag Adjusted for Desired By VBE(off} Vet. = 125V 5 8 COIL DATA: GAP FOR 30 mHi2 A Vec = 20V e = os i 53 FERROXCUBE CORE #6656 _ _ Di = 1N5820 1V aS FULL BOBBIN (~200 TURNS) #20 teoil = 89 mH Velamp = 300 Ve Rp = 479 oneaen ty CLAMPED OUTPUT WAVEFORMS stoayk- lo us n = | Tr ty ADJUSTED TO 5 Cipk) OBTAIN Ic i L TEST EQUIPMENT 0 4. it SCOPE-TEKTRONICS 2 Leoit Cod : - ue Veo 475 OR EQUIVALENT -asvL> Ee yj a CE Leoit {Ic ) th t< 10ns F | - = Vea QUTY CYCLE = 1.0% t clamp Rig AND Rc ADJUSTED FOR DESIRED tg AND Ic Velamp 90% Ic tr tf tc 10% Velamp 10% px Table 2. Typical Inductive Switching Performance Ic Tc tey try tt tr te AMP sc ws HS Ss us us 0.5 25 13 | 023 | 030 | 035 | 030 100 16 | 026 | 030 | o40 | 0236 1 25 15 | 010 | 014 | 0.05 | 0.16 100 17 | 013 | 0.26 | 0.06 | 0.29 15 25 18 | 007 | o10 | 005 | 0.16 Bc 100 3 0.08 | 0.22 | 0.08 | 0.28 Figure 7. inductive Switching Measurements 3-857 NOTE: All Data Recorded in the Inductive Switching Circuit in Table 1MJD13003 SWITCHING TIMES NOTE In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate mea- surements must be made on each waveform to deter- mine the total switching time. For this reason, the fol- lowing new terms have been defined. tsy = Voltage Storage Time, 90% Ip1 to 10% Velamp try = Voltage Rise Time, 10-90% Vclamp tf = Current Fall Time, 90-10% ic ty = Current Tail, 10-2% Ic tc = Crossover Time, 10% Velamp to 10% Ic An enlarged portion of the inductive switching wave- RESISTIVE SWITCHING nm 2s on 1, TIME (us! ee ss oiLe@ VBE(off} = 5 0.07 0.05 0.03 0.02 0.02 0.03 05 0.7 10 20 0.05 0.07 0.1 0.2 03 (c, COLLECTOR CURRENT (AMP) Figure 8. Turn-On Time o nam s RG RESISTANCE (NORMALIZED) 2 2 = eb a 0.07 Ri S R T THERM, 2 3 z & 0.02 0.01 0.01 0.02 0.03 0.05 01 02 03 05 1 rit, TRANSI forms is shown in Figure 7 to aid in the visual identity of these terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the equation: Pswt = 1/2 Vccliclte)f In general, try + tf = tc. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resis- tive switching is specified at 25C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifi- cations which make this a SWITCHMODE" transistor are the inductive switching speeds (te and tgy) which are guaranteed at 100C. PERFORMANCE 19 5 oS t, TIME {es} 0. 0.5 07 1 2 0.05 0.07 0.1 02 03 \c, COLLECTOR CURRENT (AMP) 1 0.02 0.03 Figure 9. Turn-Off Time - Rescity = 0) Rac Rasc = 8.33 CW MAX D CURVES APPLY FOR POWER ft PULSE TRAIN SHOWN lh READ TIME AT ty DUTY CYCLE, D = 14 Tyipkh Te = Pipky @scit} Pipk) 3 5 10 20. 30~50 100 200 300 500 1k t TIME (ms} Figure 10. Thermal Response 3-858MJD13003 The Safe Operating Area figures shown in Figures 11 and 12 are specified ratings for these devices under the test conditions shown. 1 = = 5 05 w Tc = 25C = 02 oOo So. SECOND BREAKDOWN LIMIT 00s THERMAL LIMIT (@ 25C a" = = WIRE BOND LIMIT 2, 0.02 CURVES APPLY BELOW < RATED 0.01 0.005 5 10 20 50 100 200 300 500 Vee. COLLECTOR-EMITTER VOLTAGE {VOLTS} Figure 11. Active Region Safe Operating Area Od Te = 100C Ip1 = 1A Vegan) = 9 4 2 Ic, COLLECTOR CURRENT (AMP) v 0 100 200 300 400 500 600 700 Vcey, COLLECTOR-EMITTER CLAMP VOLTAGE (VOLTS) 800 Figure 12. Reverse Bias Safe Operating Area SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate Ic VcE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 11 is based on Tc = 25C; Ty(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when Tc = 25C. Allowable current at the volt- ages shown on Figure 11 may be found at any case tem- perature by applying curves on Figure 13. TJ(pk) May be calculated from the data in Figure 10. At high case temperatures, thermal limitations will re- duce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage- current conditions during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 12 gives RBSOA characteristics. Ta| TT 25 | 25 nN rs S an Ta (SURFACE MOUNT) Pp, POWER DISSIPATION (WATTS) 76 100 T, TEMPERATURE (C) 50 125 Figure 13. Power Derating 3-859