Nov-07-2002
1
BB833...
Silicon Tuning Diodes
Extended frequency range up to 2.5 GHz;
spezial design for use in TV-sat indoor units
High capacitance ratio
BB833
1 2
Type Package Configuration LS (nH) Marking
BB833 SOD323 single 1.8 white X
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage VR30 V
Peak reverse voltage-
R
5k
VRM 35
Forward current IF20 mA
Operating temperature range Top -55 ... 150 °C
Storage temperature Tstg -55 ... 150
Nov-07-2002
2
BB833...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Reverse current
VR = 30 V
VR = 30 V, TA = 85 °C
IR-
-
-
-
20
500
nA
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 28 V, f = 1 MHz
CT
8.5
0.6
9.3
0.75
10
0.9
pF
Capacitance ratio
VR = 1 V, VR = 28 V, f = 1 MHz
CT1/CT28 11 12.4 -
Capacitance matching1)
VR = 1 V, VR = 28 V, f = 1 MHz
CT/CT- - 3 %
Series resistance
VR = 1 V, f = 470 MHz
rS- 1.8 -
1For details please refer to Application Note 047.
Nov-07-2002
3
BB833...
Diode capacitance CT =
(VR)
f = 1MHz
10
0
EHD07121BB 833
C
V
R
T
01
10
2
10V
2
4
6
8
10
pF
12
Temperature coefficient of the diode
capacitance TCc =
(VR)
10 -1 10 0 10 1 10 2
V
VR
-5
10
-4
10
-3
10
1/°C
TCc