MJD2955(PNP), MJD3055(NPN) Complementary Power Transistors DPAK for Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. Features * Lead Formed for Surface Mount Applications in Plastic Sleeves * * * * * * (No Suffix) Straight Lead Version in Plastic Sleeves ("-1" Suffix) Electrically Similar to MJE2955 and MJE3055 High Current Gain-Bandwidth Product Epoxy Meets UL 94 V-0 @ 0.125 in NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS, 20 WATTS COMPLEMENTARY COLLECTOR 2, 4 1 BASE 1 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Max Unit VCEO 60 Vdc Collector-Base Voltage VCB 70 Vdc Emitter-Base Voltage VEB 5 Vdc IC 10 Adc IB 6 Adc 20 0.16 W W/C 1.75 0.014 W W/C Collector-Emitter Voltage Collector Current Base Current COLLECTOR 2, 4 Total Power Dissipation @ TC = 25C Derate above 25C PD{ Total Power Dissipation (Note 1) @ TA = 25C Derate above 25C PD Operating and Storage Junction Temperature Range TJ, Tstg -55 to +150 C ESD - Human Body Model HBM 3B V ESD - Machine Model MM C V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. 3 EMITTER 4 4 1 2 1 3 DPAK CASE 369C STYLE 1 2 3 IPAK CASE 369D STYLE 1 MARKING DIAGRAMS AYWW J xx55G DPAK A Y WW Jxx55 G AYWW J xx55G IPAK = Assembly Location = Year = Work Week = Device Code x = 29 or 30 = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. (c) Semiconductor Components Industries, LLC, 2013 August, 2013 - Rev. 13 1 Publication Order Number: MJD2955/D MJD2955 (PNP), MJD3055 (NPN) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Case RqJC 6.25 C/W Thermal Resistance, Junction-to-Ambient (Note 2) RqJA 71.4 C/W IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 60 - - 50 - - 0.02 2 - - 0.02 2 - 0.5 20 5 100 - - - 1.1 8 - 1.8 2 - Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 3) (IC = 30 mAdc, IB = 0) VCEO(sus) Collector Cutoff Current (VCE = 30 Vdc, IB = 0) ICEO Collector Cutoff Current (VCE = 70 Vdc, VEB(off) = 1.5 Vdc) (VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) ICEX Collector Cutoff Current (VCB = 70 Vdc, IE = 0) (VCB = 70 Vdc, IE = 0, TC = 150_C) ICBO Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO Vdc mAdc mAdc mAdc mAdc ON CHARACTERISTICS hFE DC Current Gain (Note 3) (IC = 4 Adc, VCE = 4 Vdc) (IC = 10 Adc, VCE = 4 Vdc) Collector-Emitter Saturation Voltage (Note 3) (IC = 4 Adc, IB = 0.4 Adc) (IC = 10 Adc, IB = 3.3 Adc) VCE(sat) Base-Emitter On Voltage (Note 3) (IC = 4 Adc, VCE = 4 Vdc) VBE(on) - Vdc Vdc DYNAMIC CHARACTERISTICS fT Current-Gain - Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz) 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. http://onsemi.com 2 MHz MJD2955 (PNP), MJD3055 (NPN) TYPICAL CHARACTERISTICS PD, POWER DISSIPATION (WATTS) TA TC 2.5 25 2 20 TC 1.5 15 TA SURFACE MOUNT 1 10 0.5 5 0 0 25 50 75 100 125 150 T, TEMPERATURE (C) Figure 1. Power Derating 2 500 100 VCE = 2 V 0.7 0.5 25C -55C 50 30 20 0.02 0.05 0.1 0.5 0.2 1 2 5 10 0 0.1 0.2 0.4 0.6 1 2 Figure 2. DC Current Gain Figure 3. Turn-On Time 4 6 5 TJ = 25C VCC = 30 V IC/IB = 10 IB1 = IB2 3 2 TJ = 25C 1 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2 V 0.4 0.2 0.06 0.1 IC, COLLECTOR CURRENT (AMP) t, TIME (s) V, VOLTAGE (VOLTS) 0.6 td @ VBE(off) 5 V IC, COLLECTOR CURRENT (AMP) 1 0.8 0.1 0.03 0.02 1.4 1.2 tr 0.3 0.2 0.07 0.05 10 5 0.01 TJ = 25C VCC = 30 V IC/IB = 10 1 TJ = 150C t, TIME (s) hFE , DC CURRENT GAIN 300 200 ts 0.7 0.5 0.3 0.2 tf 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 1 2 3 5 0.07 0.05 0.06 0.1 10 0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 4. "On" Voltages, MJD3055 Figure 5. Turn-Off Time http://onsemi.com 3 2 4 6 MJD2955 (PNP), MJD3055 (NPN) 2 TJ = 25C 1.6 V, VOLTAGE (VOLTS) VCC +30 V 25 ms RC +11 V 0 1.2 SCOPE RB -9 V VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 3 V D1 51 tr, tf 10 ns DUTY CYCLE = 1% -4 V 0.4 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.3 0.5 1 2 3 IC, COLLECTOR CURRENT (AMP) D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA 10 5 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 6. "On" Voltages, MJD2955 1 0.7 0.5 Figure 7. Switching Time Test Circuit D = 0.5 0.3 0.2 0.2 0.1 0.07 0.05 0.05 0.02 0.01 0.03 0.02 P(pk) RqJC(t) = r(t) RqJC RqJC = 6.25C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.1 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 t, TIME (ms) 10 20 30 50 100 200 300 500 1k Figure 8. Thermal Response Forward Bias Safe Operating Area Information IC, COLLECTOR CURRENT (AMP) 10 5 3 2 100ms 1 1ms 0.5 0.3 5ms 0.1 dc WIRE BOND LIMIT THERMAL LIMIT TC = 25C (D = 0.1) SECOND BREAKDOWN LIMIT 0.05 0.03 0.02 0.01 0.6 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 9 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 150_C. TJ(pk) may be calculated from the data in Figure 8. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 500ms TJ = 150C 1 2 20 4 6 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 40 60 Figure 9. Maximum Forward Bias Safe Operating Area http://onsemi.com 4 MJD2955 (PNP), MJD3055 (NPN) ORDERING INFORMATION Package Type Package Shipping MJD2955G DPAK (Pb-Free) 369C 75 Units / Rail MJD2955-1G IPAK (Pb-Free) 369D 75 Units / Rail MJD2955T4G DPAK (Pb-Free) 369C 2,500 / Tape & Reel NJVMJD2955T4G* DPAK (Pb-Free) 369C 2,500 / Tape & Reel MJD3055G DPAK (Pb-Free) 369C 75 Units / Rail MJD3055T4G DPAK (Pb-Free) 369C 2,500 / Tape & Reel NJVMJD3055T4G* DPAK (Pb-Free) 369C 2,500 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable http://onsemi.com 5 MJD2955 (PNP), MJD3055 (NPN) PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C A A E b3 c2 B 4 L3 Z D 1 2 H DETAIL A 3 L4 b2 e c b 0.005 (0.13) M C H L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 6.17 0.243 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 --- 0.040 0.155 --- STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.244 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 --- 1.01 3.93 --- MJD2955 (PNP), MJD3055 (NPN) PACKAGE DIMENSIONS IPAK CASE 369D ISSUE C C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 DIM A B C D E F G H J K R S V Z Z A S 1 2 3 -T- SEATING PLANE K J F H D G INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- 3 PL 0.13 (0.005) M STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. 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