ON Semiconductor SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode The MJ10023 Darlington transistor is designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line-operated switchmode applications such as: * * * * * * * AC and DC Motor Controls Switching Regulators Inverters Solenoid and Relay Drivers Fast Turn-Off Times 150 ns Inductive Fall Time @ 25C (Typ) 300 ns Inductive Storage Time @ 25C (Typ) Operating Temperature Range - 65 to + 200C 100C Performance Specified for: Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents MJ10023 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR 400 VOLTS 250 WATTS CASE 197A-05 TO-204AE (TO-3) 100 15 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIII IIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIII IIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIII IIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIII IIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIII IIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIII IIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIII IIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIII IIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIII IIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIII IIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIII IIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIII IIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIII IIIIII IIIIIIII IIII MAXIMUM RATINGS Rating Symbol Max Unit Collector-Emitter Voltage VCEO 400 Vdc Collector-Emitter Voltage VCEV 600 Vdc Emitter Base Voltage VEB 80 Vdc Collector Current -- Continuous -- Peak (1) IC ICM 40 80 Adc Base Current -- Continuous -- Peak (1) IB IBM 20 40 Adc Total Power Dissipation @ TC = 25C @ TC = 100C Derate above 25C PD 250 143 1.43 Watts TJ, Tstg -65 to +200 C Symbol Max Unit RJC 0.7 C/W TL 275 C Operating and Storage Junction Temperature Range W/C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 1 Publication Order Number: MJ10023/D MJ10023 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIII III IIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII III IIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII III IIIIIII III IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIII IIIII III IIII IIII III IIIIIIII IIIIIIIIIIII IIIII III IIII IIII III IIIIIIII IIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIII IIIII III IIII IIII III IIIIIIII IIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIII IIIII III IIII IIII III IIIIIIII IIIIIIIIIIII IIIII III IIII IIII III IIIIIIII IIIIIIIIIIII IIIII III IIII IIII III IIIIIIII IIIIIIIIIIII IIIII III IIII IIII III IIIIIIII IIIIIIIIIIII IIIII III IIII IIII III IIIIIIII IIIIIIIIIIII IIIII III IIII IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max 400 -- -- -- -- -- -- 0.25 5.0 Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Table 1) (IC = 100 mA, IB = 0) VCEO(sus) Vdc Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150C) ICEV mAdc Collector Cutoff Current (VCE = Rated VCEV, RBE = 50 , TC = 100C) ICER -- -- 5.0 mAdc Emitter Cutoff Current (VEB = 2.0 V, IC = O) IEBO -- -- 175 mAdc SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased Clamped Inductive SOA with Base Reverse Biased IS/b See Figure 13 RBSOA See Figure 14 ON CHARACTERISTICS (1) DC Current Gain (IC = 10 Adc, VCE = 5.0 V) hFE 50 -- 600 -- -- -- -- -- -- 2.2 5.0 2.5 -- -- -- -- 2.5 2.5 Vf -- 2.5 5.0 Vdc Cob 150 -- 600 pF td -- 0.03 0.2 s tr -- 0.4 1.2 s ts -- 0.9 2.5 s tf -- 0.3 0.9 s tsv -- 1.9 4.4 s tc -- 0.6 2.0 s tfi -- 0.3 -- s tsv -- 1.0 -- s tc -- 0.3 -- s tfi -- 0.15 -- s Collector-Emitter Saturation Voltage (IC = 20 Adc, IB = 1.0 Adc) (IC = 40 Adc, IB = 5.0 Adc) (IC = 20 Adc, IB = 10 Adc, TC = 100C) VCE(sat) Base-Emitter Saturation Voltage (IC = 20 Adc, IB = 1.2 Adc) (IC = 20 Adc, IB = 1.2 Adc, TC = 100C) VBE(sat) Diode Forward Voltage (IF = 20 Adc) -- Vdc Vdc DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz) SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time Rise Time Storage Time (VCC = 250 Vdc, IC = 20 A, IB1 = 1.0 Adc, 0V VBE(off) 5.0 V, tp = 50 s s, BE( ff) = 5 Duty Cycle 2.0%) Fall Time Inductive Load, Clamped (Table 1) Storage Time Crossover Time A VCEM = 250 V 0A (ICM = 20 A, V, IB1 = 1 1.0 A, VBE(off) = 5 V, TC = 100 100C) C) Fall Time Storage Time Crossover Time (ICM = 20 A, A VCEM = 250 V V, IB1 = 1 1.0 0A A, VBE(off) = 5 V, TC = 25 25C) C) Fall Time (1) Pulse Test: PW = 300 s, Duty Cycle 2%. http://onsemi.com 2 MJ10023 TYPICAL ELECTRICAL CHARACTERISTICS TJ = 100C 200 hFE, DC CURRENT GAIN VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 300 TJ = 25C 100 50 30 VCE = 5 V 1.0 0.4 2.0 5.0 10 IC, COLLECTOR CURRENT (AMPS) 40 20 5.0 TJ = 100C 4.5 4.0 3.5 3.0 IC = 40 A 2.5 2.0 IC = 20 A 1.5 IC = 10 A 1.0 0.5 0.01 0.02 0.1 0.2 0.5 1.0 IB, BASE CURRENT (AMP) 2.0 5.0 10 Figure 2. Collector Saturation Region 3.0 3.0 2.7 2.7 IC/IB = 10 2.4 VBE(sat), BASE-EMITTER VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 0.05 2.1 1.8 1.5 1.2 VCE @ 25C 0.9 0.6 0.4 1.0 2.0 2.1 1.8 VBE @ 25C 1.5 1.2 VBE @ 100C 0.9 0.6 VCE @ 100C 0.3 IC/IB = 10 2.4 0.3 5.0 10 20 0.4 40 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 104 40 400 103 102 101 100 10-1 -0.2 C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) VCE = 250 V TJ = 125C 100C 75C 25C 200 100 50 0 +0.2 +0.4 +0.6 40 +0.8 4.5 10 20 50 100 200 VBE, BASE-EMITTER VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 5. Collector Cutoff Region Figure 6. Cob, Output Capacitance http://onsemi.com 3 400 MJ10023 Table 1. Test Conditions for Dynamic Performance VCEO(sus) INPUT CONDITIONS 20 RBSOA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING INDUCTIVE TEST CIRCUIT TURN-ON TIME 1 1 5 0 V 1 IN 2 PUT SEE ABOVE FOR DETAILED CONDITIONS PW Varied to Attain IC = 100 mA CIRCUIT VALUES TUT Lcoil Vclamp IB1 adjusted to obtain the forced hFE desired VCC RS = 0.1 2 TURN-OFF TIME Use inductive switching driver as the input to the resistive test circuit. Lcoil = 180 H Rcoil = 0.05 VCC = 20 V Lcoil = 10 mH, VCC = 10 V Rcoil = 0.7 Vclamp = VCEO(sus) VCC = 250 V RL = 12.5 Pulse Width = 25 s TEST CIRCUITS OUTPUT WAVEFORMS ICM t1 tf TIM E t1 t2 VCEM Vclamp t2 RESISTIVE TEST CIRCUIT t1 Adjusted to Obtain IC tf Clamped t Lcoil (ICM) VCC Lcoil (ICM) Vclamp Test Equipment Scope -- Tektronix 475 or Equivalent t http://onsemi.com 4 2 IB1 Rcoil 1N4937 OR EQUIVALENT TUT 1 2 RL VCC MJ10023 10 VCEM 90% VCEM tsv Vclamp 90% ICM trv tfi tti tc 10% VCEM 90% IB1 10% ICM 2% IC I B2(pk), BASE CURRENT (AMPS) ICM 9.0 8.0 7.0 6.0 5.0 4.0 IC = 20 A IB1 = 1 A Vclamp = 250 V TJ = 25C 3.0 2.0 1.0 TIME 1.0 0 Figure 7. Inductive Switching Measurements 2.0 3.0 4.0 5.0 6.0 7.0 VBE(off), REVERSE BASE VOLTAGE (VOLTS) Figure 8. Typical Peak Reverse Base Current 2.0 ICM = 20 A IB1 = 1 A VCEM = 250 V tsv @ 100C 1.75 t, TIME (s) 1.5 1.25 tc @ 100C 1.0 tsv @ 25C 0.75 0.5 tc @ 25C 0.25 0 0 1.0 5.0 6.0 7.0 2.0 3.0 4.0 VBE(off), BASE-EMITTER VOLTAGE (VOLTS) Figure 9. Typical Inductive Switching Times http://onsemi.com 5 8.0 8.0 MJ10023 SWITCHING TIMES NOTE In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% VCEM trv = Voltage Rise Time, 10-90% VCEM tfi = Current Fall Time, 90-10% ICM tti = Current Tail, 10-2% ICM tc = Crossover Time, 10% VCEM to 10% ICM An enlarged portion of the inductive switching waveform is shown in Figure 7 to aid on the visual identity of these terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN-222A: PSWT = 1/2 VCCIC(tc)f In general, t rv + tfi tc . However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user orientated specifications which make this a "SWITCHMODE" transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100C. RESISTIVE SWITCHING 2.0 2.0 VCC = 250 V IC/IB1 = 20 TJ = 25C 1.0 1.0 0.2 tr 0.1 0.05 0.02 ts 0.5 t, TIME (s) t, TIME (s) 0.5 VCC = 250 V IC/IB1 = 20 VBE(off) = 5 V td 0.4 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (AMPS) tf 0.2 0.1 0.05 0.02 20 40 0.4 Figure 10. Typical Turn-On Switching Times 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (AMPS) 20 40 Figure 11. Typical Turn-Off Switching Times r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.5 0.2 0.1 D = 0.5 0.2 0.1 RJC(t) = r(t) RJC RJC = 0.7C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 0.05 0.01 0.1 SINGLE PULSE 1.0 10 100 t, TIME (ms) Figure 12. Thermal Response http://onsemi.com 6 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 1000 10000 MJ10023 The Safe Operating Area figures shown in Figures 13 and 14 are specified for these devices under the test conditions shown. IC, COLLECTOR CURRENT (AMPS) 100 50 SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TC = 25C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 13 may be found at any case temperature by using the appropriate curve on Figure 15. TJ(pk) may be calculated from the data in Figure 12. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10 s (TURN-ON SWITCHING) 20 10 5.0 dc 2.0 1.0 0.5 TC = 25C 0.2 0.1 0.05 0.02 0.01 1.0 BONDING WIRE LTD THERMAL LTD SECOND BREAKDOWN LTD 2.0 5.0 10 20 50 100 200 400 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. Maximum Forward Bias Safe Operating Area For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current condition allowable during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 14 gives the RBSOA characteristics. IC/IB 20 25C TJ 100C 80 70 60 TURN-OFF LOAD LINE 50 40 30 20 10 0 2 V VBE(off) 8 V RBE = 24 0 100 200 300 400 500 700 600 VCEM, PEAK COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 14. Maximum RBSOA, Reverse Bias Safe Operating Area 100 POWER DERATING FACTOR (%) ICM , PEAK COLLECTOR CURRENT (AMPS) REVERSE BIAS SECOND BREAKDOWN DERATING 80 60 40 THERMAL DERATING 20 0 0 40 80 120 TC, CASE TEMPERATURE (C) Figure 15. Power Derating http://onsemi.com 7 160 200 MJ10023 PACKAGE DIMENSIONS CASE 197A-05 TO-204AE (TO-3) ISSUE J A N C -T- E D K 2 PL 0.30 (0.012) U V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE T Q M M Y M DIM A B C D E G H K L N Q U V -Y- L 2 H G B M T Y 1 -Q- 0.25 (0.010) M INCHES MIN MAX 1.530 REF 0.990 1.050 0.250 0.335 0.057 0.063 0.060 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC 0.760 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 38.86 REF 25.15 26.67 6.35 8.51 1.45 1.60 1.53 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC 19.31 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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