PD - 94971 IRF3703PbF SMPS MOSFET HEXFET(R) Power MOSFET Applications l Synchronous Rectification l Active ORing l VDSS RDS(on) max ID 30V 2.8m 210A Lead-Free Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TA = 25C VGS dv/dt TJ, TSTG Max. 210 100 Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Units A 1000 230 3.8 1.5 20 5.0 -55 to + 175 W W/C V V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. Max. Units --- 0.5 --- 0.65 --- 62 C/W Notes through are on page 8 www.irf.com 1 02/02/04 IRF3703PbF Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 --- --- Static Drain-to-Source On-Resistance --- Gate Threshold Voltage 2.0 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. --- 0.028 2.3 2.8 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 2.8 VGS = 10V, ID = 76A m 3.9 VGS = 7.0V, ID = 76A 4.0 V VDS = VGS, ID = 250A 20 VDS = 24V, VGS = 0V A 250 VDS = 24V, VGS = 0V, TJ = 150C 200 VGS = 20V nA -200 VGS = -20V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 150 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 209 62 42 18 123 53 24 8250 3000 290 10360 3060 2590 Max. Units Conditions --- S VDS = 24V, ID = 76A --- ID = 76A --- nC VDS = 24V --- VGS = 10V, --- VDD = 15V, VGS = 10V --- ID = 76A ns --- RG = 1.8 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 24V, = 1.0MHz --- VGS = 0V, VDS = 0V to 24V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. Max. Units --- --- --- 1700 76 23 mJ A mJ Diode Characteristics IS I SM VSD t rr Q rr 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- 210 --- --- 1000 --- --- --- 0.8 80 185 1.3 120 275 A V ns nC Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = 76A, VGS = 0V TJ = 25C, IF = 76A, VDS = 16V di/dt = 100A/s www.irf.com IRF3703PbF 10000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 1000 100 100 4.5V 10 20s PULSE WIDTH TJ = 25 C 1 0.1 1 10 4.5V 100 RDS(on) , Drain-to-Source On Resistance (Normalized) TJ = 25 C TJ = 175 C 100 V DS = 15V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 10000 10 4.0 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 20s PULSE WIDTH TJ = 175 C 10 0.1 VDS , Drain-to-Source Voltage (V) I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 2.5 ID = 210AA 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF3703PbF VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 12000 10000 Ciss 8000 6000 Coss 4000 2000 0 20 VGS , Gate-to-Source Voltage (V) 14000 10 12 8 4 0 100 FOR TEST CIRCUIT SEE FIGURE 13 0 40 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 120 160 200 240 280 320 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 ISD , Reverse Drain Current (A) 80 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) 100 TJ = 175 C 1000 10 TJ = 25 C V GS = 0 V 0.4 0.8 1.2 10us 100us 100 1 0.1 0.0 1.6 2.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS = 24V 16 Crss 1 ID = 76A 2.4 1ms 10 TC = 25 C TJ = 175 C Single Pulse 1 10ms 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF3703PbF 240 LIMITED BY PACKAGE VGS 200 I D , Drain Current (A) RD V DS D.U.T. RG + -VDD 160 10V Pulse Width 1 s Duty Factor 0.1 % 120 Fig 10a. Switching Time Test Circuit 80 VDS 40 0 90% 25 50 75 100 125 150 TC , Case Temperature ( C) 175 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 0.001 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF3703PbF ID 31A 54A 76A TOP 5000 DRIVER L VDS EAS , Single Pulse Avalanche Energy (mJ) 6000 15V BOTTOM 4000 D.U.T RG + V - DD IAS 20V tp 0.01 A 3000 2000 Fig 12a. Unclamped Inductive Test Circuit 1000 V(BR)DSS tp 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 10 V QGS 50K 12V .2F .3F QGD D.U.T. + V - DS VGS VG 3mA IG ID Current Sampling Resistors Charge Fig 13a. Basic Gate Charge Waveform 6 Fig 13b. Gate Charge Test Circuit www.irf.com IRF3703PbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG * * * * Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFET www.irf.com 7 IRF3703PbF TO-220AB Package Outline 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) MIN 1 2 4- COLLECTOR 4- DRAIN 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 3X LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 2 - DRAIN 1- GATE 1- GATE 3 - SOURCE 2- COLLECTOR 2- DRAIN 3- EMITTER 3- SOURCE 4 - DRAIN HEXFET 3 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) 0.36 (.014) 3X M B A M 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPL E : T HIS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T HE AS S E MB L Y L INE "C" Note: "P" in assembly line position indicates "Lead-Free" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE Notes: Repetitive rating; pulse width limited by max. junction temperature. DAT E CODE YEAR 7 = 1997 WE E K 19 L INE C Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Starting TJ = 25C, L = 0.6mH RG = 25, IAS = 76A. ISD 76A, di/dt 100A/s, VDD V(BR)DSS, TJ 175C PAR T NU MB E R Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/04 8 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/