02/02/04
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IRF3703PbF
SMPS MOSFET
HEXFET® Power MOSFET
lSynchronous Rectification
Benefits
Applications
lLow Gate Impedance to Reduce Switching
Losses
lFully Avalanche Rated
VDSS RDS(on) max ID
30V 2.8mΩ210A
Absolute Maximum Ratings
Notes through are on page 8
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 210
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 100 A
IDM Pulsed Drain Current 1000
PD @TC = 25°C Power Dissipation 230 W
PD @TA = 25°C Power Dissipation 3.8
Linear Derating Factor 1.5 W/°C
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 175 °C
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.65
RθCS Case-to-Sink, Flat, Greased Surface 0.5 ––– °C/W
RθJA Junction-to-Ambient ––– 62
Thermal Resistance
lUltra Low On-Resistance
lActive ORing
TO-220AB
PD - 94971
lLead-Free
IRF3703PbF
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Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.028 ––– V/°C Reference to 25°C, ID = 1mA
––– 2.3 2.8 VGS = 10V, ID = 76A
––– 2.8 3.9 VGS = 7.0V, ID = 76A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
––– ––– 20 µA VDS = 24V, VGS = 0V
––– ––– 250 VDS = 24V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -20V
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 150 ––– ––– S VDS = 24V, ID = 76A
QgTotal Gate Charge ––– 209 ––– ID = 76A
Qgs Gate-to-Source Charge ––– 62 ––– nC VDS = 24V
Qgd Gate-to-Drain ("Miller") Charge ––– 42 ––– VGS = 10V,
td(on) Turn-On Delay Time ––– 18 ––– VDD = 15V, VGS = 10V
trRise Time ––– 123 ––– ID = 76A
td(off) Turn-Off Delay Time ––– 53 ––– RG = 1.8Ω
tfFall Time ––– 24 ––– VGS = 10V
Ciss Input Capacitance ––– 8250 ––– VGS = 0V
Coss Output Capacitance ––– 3000 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 290 ––– pF ƒ = 1.0MHz
Coss Output Capacitance ––– 10360 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 3060 ––– VGS = 0V, VDS = 24V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 2590 ––– VGS = 0V, VDS = 0V to 24V
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy––– 1700 mJ
IAR Avalanche Current––– 76 A
EAR Repetitive Avalanche Energy––– 23 mJ
Avalanche Characteristics
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– 0.8 1.3 V TJ = 25°C, IS = 76A, VGS = 0V
trr Reverse Recovery Time ––– 80 120 ns TJ = 25°C, IF = 76A, VDS = 16V
Qrr Reverse RecoveryCharge ––– 185 275 nC di/dt = 100A/µs
Diode Characteristics
210
1000
A
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS Drain-to-Source Leakage Current
RDS(on) Static Drain-to-Source On-Resistance mΩ
IRF3703PbF
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
10000
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 175 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
10
100
1000
10000
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V = 15V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 175 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
210AA
IRF3703PbF
4www.irf.com
1 10 100
0
2000
4000
6000
8000
10000
12000
14000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
0.1
1
10
100
1000
0.0 0.4 0.8 1.2 1.6 2.0 2.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 175 C
J°
10
100
1000
10000
1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 175 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
040 80 120 160 200 240 280 320
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
76A
V = 24V
DS
IRF3703PbF
www.irf.com 5
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150 175
0
40
80
120
160
200
240
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
IRF3703PbF
6www.irf.com
QG
QGS QGD
VG
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150 175
0
1000
2000
3000
4000
5000
6000
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
31A
54A
76A
IRF3703PbF
www.irf.com 7
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFET® Power MOSFET
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
IRF3703PbF
8www.irf.com
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.02/04
Repetitive rating; pulse width limited by
max. junction temperature.
ISD ≤ 76A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
Starting TJ = 25°C, L = 0.6mH
RG = 25Ω, IAS = 76A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
- B -
1.32 (.052)
1.22 (.048)
3X 0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
4.69 (.185)
4.20 (.165)
3X 0.93 (.037)
0.69 (.027)
4.06 (.160)
3.55 (.140)
1.15 (.045)
MIN
6.47 (.255)
6.10 (.240)
3.78 (.149)
3.54 (.139)
- A -
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
3X 1.40 (.055)
1.15 (.045)
2.54 (.100)
2X
0.36 (.014) M B A M
4
1 2 3
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
HEXFET
1- GATE
2- DRAIN
3- SOURCE
4- DRAIN
LEAD ASSIGNMENTS
IGBTs, CoPACK
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
TO-220AB Package Outline
TO-220AB Part Marking Information
EXAMPLE:
IN THE ASS EMBLY LINE "C"
T HIS IS AN IRF 1010
LOT CODE 1789
AS S E MB LE D ON WW 19, 1997 PART NUMBER
AS S E MB L Y
LOT CODE
DATE CODE
YEAR 7 = 1997
LINE C
WEEK 19
LOGO
RECTIFIER
INT E R NAT ION AL
Note: "P" in assembly line
position indicates "Lead-Free"
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
