IMX25
Transistors
1/4
General purpose transistor
(isolated dual transistors)
IMX25
zFeatures
1) T wo 2SD2704K chip s in a SMT p ackage.
2) Mounting possible
with
SMT3
automatic
mounting machine.
3) Transistor
elements
are
independent,
eliminating interference.
4) Mounting cost and area can be cut in half.
zStructure
Epitaxial planar type
NPN silicon transistor
The following characteristics apply to both T r1 and T r2.
zExternal dimensions (Unit : mm)
ROHM : SMT6
EIAJ : SC-74 Abbreviated symbol: X25
(1)
(2)
(3)
0.3 +0.1
−0.05
1.6
2.8±0.2
+0.2
−0.1
(6)
(5)
(4)
0.95 0.95
1.9±0.2
2.9±0.2 1.1+0.2
0.8±0.1
−0.1
0 to 0.1
0.3 to 0.6
0.15 −0.06
+0.1
All terminals have same dimensions
zAbsolute maximum ratings (Ta=25°C) zEquiv alent circuit
Parameter Symbol Limits Unit
VCBO 50 V
VCEO 20 V
VEBO 25 V
IC300 mA
Tj 150 °C
Tstg −55 to +150 °C
Pd 300(TOTAL) mW ∗
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Power dissipation
∗ 200mW per element must not be exceeded.
Tr2
Tr1
(4) (5) (6)
(3) (2) (1)
zElectrical characteristics (Ta=25°C)
Parameter Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
Min.
50
20
25
−
−
820
−
−
−
−
−
−
−
50
−
−
−
0.1
0.1
2700
100
VI
C
=10µA
I
C
=1mA
I
E
=10µA
V
CB
=50V
V
EB
=25V
V
CE
=2V, I
C
=4mA
I
C
/I
B
=30mA/3mA
V
V
µA
µA
−
V
Typ. Max. Unit Conditions
f
T
Ron
Cob
−
−
−
35
0.7
3.9
−
−
−
V
CE
=6V, I
E
=−4mA, f=10MHz
I
B
=5mA, V
i
=100mVrms, f=1kHz
V
CB
=10V, I
E
=0A, f=1MHz
MHz
Ω
pF
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Output capacitance
Output On-resistance
Collector-emitter saturation voltage
IMX25
Transistors
2/4
zPackaging specifications
IMX25
Part No.
T110
3000
Packaging type
Code
Basic ordering unit (pieces)
Taping
zElectrical characteristic curves
0 0.2 0.4 0.6 0.8 1 1.2
0.1
0.1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
BASE TO EMITTER VOLTAGE : V
BE(ON)
(V)
Fig.1 Grounded emitter propagation
characteristics (
Ι
)
V
CE
=2V
25°C
−40°C
Ta=125°C
COLLECTOR CURRENT : I
C
(mA)
Fig.2 Grounded emitter propagation
characteristics (
ΙΙ
)
0 0.2 0.4 0.6 0.8 1 1.2
0.1
0.1
10
100
1000
BASE TO EMITTER VOLTAGE : V
BE(ON)
(V)
V
CE
=6V
25°C
−40°C
Ta=125°C
1 10 100 1000
10
100
1000
10000
Ta
= −
40°C
Ta
=
25°C
Ta
=
125°C
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC
(mA)
Fig.3 DC current gain
vs. collector current ( )
VCE=2V
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain
vs. collector current ( )
1 10 100 1000
10
100
1000
10000
Ta
= −
40°C
Ta
=
25°C
Ta
=
125°C
V
CE
=6V
1 10 100 1000
1
100
10
1000
10000
Ta
= −
40°C
Ta
=
25°C
Ta
=
125°C
COLLECTOR CURRENT : I
C
(mA)
Fig.5 Collector-emitter saturation voltage
vs. collector current ( )
I
C
/I
B
=10/1
COLLECTOR SATURATION VOLTAGE : VCE(sat)
(mV)
1 10 100 1000
1
100
10
1000
10000
Ta
= −
40°C
Ta
=
25°C
Ta
=
125°C
COLLECTOR CURRENT : I
C
(mA)
I
C
/I
B
=20/1
COLLECTOR SATURATION VOLTAGE : VCE(sat)
(mV)
Fig.6 Collector-emitter saturation voltage
vs. collector current ( )
IMX25
Transistors
3/4
1 10 100 1000
1
100
10
1000
10000
Ta
= −
40°C
Ta
=
25°C
Ta
=
125°C
COLLECTOR CURRENT : I
C
(mA)
I
C
/I
B
=50/1
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
Fig.7 Collector-emitter saturation voltage
vs. collector current ( )
Fig.8 Base-emitter saturation voltage
vs. collector current ( )
1 10 100 1000
100
1000
10000
Ta= −40°C
Ta=25°C
Ta=125°C
COLLECTOR CURRENT : I
C (mA)
I
C
/I
B
=10/1
BASE SATURATION VOLTAGE : V
BE(sat) (mV)
Fig.9 Base-emitter saturation voltage
vs. collector current ( )
COLLECTOR CURRENT : I
C (mA)
BASE SATURATION VOLTAGE : V
BE(sat) (mV)
1 10 100 1000
100
1000
10000
Ta= −40°C
Ta=25°C
Ta=125°C
I
C
/I
B
=20/1
Fig.10 Base-emitter saturation voltage
vs. collector current ( )
COLLECTOR CURRENT : I
C
(mA)
BASE SATURATION VOLTAGE : V
BE(sat)
(mV)
1 10 100 1000
100
1000
10000
Ta
= −
40°C
Ta
=
25°C
Ta
=
125°C
I
C
/I
B
=50/1
Fig.11 Gain bandwidth product
vs. emitter current
1 10 100
1
10000
Ta=
25°C
f=50MHz
I
E
=0A
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
Fig.12 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF)
EMITTER INPUT CAPACITANCE : Cib
(pF)
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
1 10 100
0.1
1
10
100
Ta=25°C
f=1MHz
IE=0A
0.01 0.1 1 10010
0.1
1
100
10
Ta
= 25
°C
See Fig.15
ON RESISTANCE : Ron (Ω)
Fig.13 Output-on resistance
vs. base current ( )
BASE CURRENT : I
B
(mA)
0.01 0.1 1 10010
0.1
1
100
10
Ta
=25
°C
See Fig.16
ON RESISTANCE : Ron (Ω)
Fig.14 Output-on resistance
vs. base current ( )
BASE CURRENT : I
B
(mA)
IMX25
Transistors
4/4
zRon measurement circuit
Ron= ×RL
v0
v0
vi−v0
R
L
=1kΩ
IB
Output
Input
100mV(rms)
1V(rms)
f=1kHz
Vi
V
Fig.15 Ron measurement circuit ( )
Ron= ×RL
v0
v0
vi−v0
R
L
=1kΩ
IB
Output
Input
100mV(rms)
1V(rms)
f=1kHz
Vi
V
Fig.16 Ron measurement circuit ( )
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
