Document Number: 88584 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Glass Passivated Ultrafast Rectifier
EGP30A thru EGP30G
Vishay General Semiconductor
FEATURES
Superectifier structure for high reliability condition
Cavity-free glass-passivated junction
Ultrafast reverse recovery time
Low forward voltage drop
Low leakage current
Low switching losses, high efficiency
High forward surge capability
Solder dip 275 °C max. 10 s, per JESD 22-B106
AEC-Q101 qualified
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer and telecommunication.
MECHANICAL DATA
Case: GP20, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV) 3.0 A
VRRM 50 V to 400 V
IFSM 125 A
trr 50 ns
VF0.95 V, 1.25 V
TJ max. 150 °C
GP20
SUPERECTIFIER
®
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL EGP30A EGP30B EGP30C EGP30D EGP30F EGP30G UNIT
Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 V
Maximum RMS voltage VRMS 35 70 105 140 210 280 V
Maximum DC blocking voltage VDC 50 100 150 200 300 400 V
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TA = 55 °C IF(AV) 3.0 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load IFSM 125 A
Operating and storage temperature range TJ, TSTG - 65 to + 150 °C
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88584
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
EGP30A thru EGP30G
Vishay General Semiconductor
Note
(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, PCB mounted
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL EGP30A EGP30B EGP30C EGP30D EGP30F EGP30G UNIT
Maximum instantaneous
forward voltage 3.0 A VF0.95 1.25 V
Maximum DC
reverse current at rated
DC blocking voltage
TA = 25 °C
IR
5.0
μA
TA = 125 °C 100
Maximum reverse
recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A trr 50 ns
Typical junction
capacitance 4.0 V, 1 MHz CJ85 75 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL EGP30A EGP30B EGP30C EGP30D EGP30F EGP30G UNIT
Typical thermal resistance
RJA (1) 20
°C/W
RJL (1) 8.0
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
EGP30G-E3/54 1.01 54 1400 13" diameter paper tape and reel
EGP30G-E3/73 1.01 73 1000 Ammo pack packaging
EGP30GHE3/54 (1) 1.01 54 1400 13" diameter paper tape and reel
EGP30GHE3/73 (1) 1.01 73 1000 Ammo pack packaging
2.0
3.0
1.0
0
0
25 50 75 100 125 150 175
Average Forward Rectied Current (A)
Ambient Temperature (°C)
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
110 100
0
25
50
75
100
125
150
175
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
Document Number: 88584 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
EGP30A thru EGP30G
Vishay General Semiconductor
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.01
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0.1
1
10
100
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
TJ = 150 °C
TJ = 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
EGP30A thru EGP30D
EGP30F and EGP30G
020 40 60 80
0.001
0.01
0.1
1
10
100
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (μA)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 75 °C
0
0
30
60
90
120
150
180
210
1 10 100 1000
Reverse Voltage (V)
Junction Capacitance (pF)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
EGP30A thru EGP30D
EGP30F and EGP30G
0.01 0.1 110 100
0.1
1
10
100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
GP20
1.0 (25.4)
MIN.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.042 (1.07)
0.037 (0.94)
DIA.
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Revision: 12-Mar-12 1Document Number: 91000
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